A low temperature high quality gate dielectric process for bottom gate organic thin film transistors (OTFT) is introduced which is compatible to plastic substrates. The Al<sub>2</sub>O<sub>3 </sub>dielectric is grown from the aluminum gate electrode by anodic oxidation at room temperature and exhibits an exceptionally good electrical performance even for thin layers of 50nm. Finding an electrolyte which significantly reduces dielectric charges was instrumental for the desired OTFT application. The electrolyte and substrate dependent behaviour was characterized and compared to different dielectrics to point out the advantages of anodic oxidized aluminum. The characteristics of pentacene bottom contact OTFTs realized with anodized Al<sub>2</sub>O<sub>3</sub> gate dielectric on glass and plastic substrates are presented.
An attractive approach to full color OLED displays is based on white emitting copolymers and color filters. In this paper the special impact of broadband emitting copolymers based on polyspirobifluorene structures is discussed. The EL spectra of broadband emitters in PLEDs are strongly influenced by interference effects as well as by the driving conditions. Experimental results could be confirmed by modelling. Adjustment of emission spectra to the color filter characteristics lead to improved efficiency.