In this paper a silicon-based digital optical switch (DOS) with the slot structure is demonstrated. By filling electro-optic
polymer in the void slot of the branches, the electro-optic effect can be applied to the DOS, and a high-speed silicon
switch with digital switching property can be achieved. Analysis shows that the crosstalk is about 35dB, switching speed
is less than 1ps, and the device length is less than 1mm.
The properties of truly confined modes of a 2D hex horizontal photonic crystal slot slab waveguide are analyzed. Then
the dispersion of liner defect waveguide is calculated. In addition, what influence the slots with different height have
over the band structure and the group velocity dispersion of the defect mode waveguide are analyzed. Based on these
studies, an ultra-compact silicon-based Mach-Zehnder amplitude modulator is proposed. For a design with almost
negligible first order chromatic dispersion in an optical bandwidth of 1THz, we predict a modulation bandwidth of
40GHz and a length of about 80µm. This is achieved by infiltrating an electro-optic polymer into a slotted photonic
crystal waveguide, the strong field confinement in slotted waveguides and the slow light interaction enhancements
provided by the photonic crystal waveguide, where group velocity and dispersion may be controlled.
A slot waveguide structure is used in the part of arrayed waveguides in AWG instead of silicon waveguides. It is filled
with high negative thermo-optic coefficient polymer in the narrow slot. The arrayed slot structure can remarkably reduce
the center wavelength shift when the temperature changes. In this study, we use the polymer WIR30-490 and ZP49 to be
filled in the slot. The thermo-optic coefficients of WIR30-490 and ZP49 are negative, and have the same order of
magnitude with silicon. In our simulations, by adjusting several variables of the slot structure, such as the width of the
slot between the pair of silicon wires, the width of the silicon waveguide, and the height of the silicon waveguide, we can
get the athermal condition of AWG for each polymer. Even if there is an acceptable error on fabrication, temperature-dependent
center wavelength shift of AWG can still be reduced down to 1 pm/°C. It makes the fabrication of athermal
silicon AWG possible.
This paper presents a novel micro-ring-resonator-assisted structure as an optical switch. This device couples two outputs
of a 1x2 power splitter into a micro-ring resonator (MRR). The double-beam interference will occur in the MRR. If the
phase difference between the beams and the coupling coefficients of MRR are set properly, the device can switch the
light by applying phase shift on MRR. High extinction ratio or low crosstalk can be achieved, even if the modulation
additional loss is large.
One kind of electro-optic polymer assisted Mach-Zehnder optical switch based on silicon slot structure is presented. By
filling electro-optic material in the void slot of the arms, direct electro-optic modulation can be introduced. Theoretical
model and detailed analysis is given in this paper.