Low-dropout (LDO) regulator with modest ripple and improved transient response is implemented in 0.18μm CMOS
technology. The proposed regulator for SOC application can achieve high stability for load current from zero to 100mA. This LDO uses process, temperature independent biasing for error amplifier which makes LDO temperature and process independent. The experimental results show the load regulation of 162 μV/mA and line regulation of 0.9 mV/V. The whole LDO chip consumes a quiescent current of 50 μA with an ultra low dropout voltage of 200mV at the maximum output current of 100mA.