Proc. SPIE. 10149, Advanced Etch Technology for Nanopatterning VI
KEYWORDS: Lithography, Electron beam lithography, Etching, Line width roughness, Directed self assembly, Nanoimprint lithography, Critical dimension metrology, Photoresist processing, Semiconducting wafers, System on a chip
In the lithography landscape, EUV technology recovered some credibility recently. However, its large adoption remains uncertain. Meanwhile, 193nm immersion lithography, with multiple-patterning strategies, supports the industry preference for advanced-node developments. In this landscape, lithography alternatives maintain promise for continued R&D. Massively parallel electron-beam and nano-imprint lithography techniques remain highly attractive, as they can provide noteworthy cost-of-ownership benefits. Directed self-assembly lithography shows promising resolution capabilities and appears to be an option to reduce multi-patterning strategies. Even if large amount of efforts are dedicated to overcome the lithography side issues, these solutions introduce also new challenges and opportunities for the integration schemes.