Ms. Stefanie Brüninghoff Profile

Stefanie Brüninghoff

Ph.D. Student at OSRAM Opto Semiconductors GmbH

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Author

Publications (5)

Proceedings Article | 19 February 2009 Paper

Temperature dependence of blue InGaN lasers

Stefanie Brüninghoff, Sönke Tautz, Matthias Sabathil, Désirée Queren, Stephan Lutgen, Uwe Strauß

Proceedings Volume 7216, 72161C (2009) https://doi.org/10.1117/12.807979

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser damage threshold, Indium gallium nitride, Quantum wells, Resistance, Continuous wave operation, Doping, Cell phones, Laser applications

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Proceedings Article | 3 February 2009 Paper

Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Harald Braun, Stephan Rogowsky, Ulrich Schwarz, Stefanie Brüninghof, Alfred Lell, Uwe Strauß

Proceedings Volume 7230, 72300F (2009) https://doi.org/10.1117/12.807454

KEYWORDS: Near field, Modes of laser operation, Superposition, Near field optics, Waveguides, Semiconductor lasers, Gaussian beams, Refractive index, Laser beam propagation, Near field scanning optical microscopy

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Proceedings Article | 8 May 2008 Paper

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Harald Braun, Dominik Scholz, Tobias Meyer, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 69971U (2008) https://doi.org/10.1117/12.781314

KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Temperature metrology, Modes of laser operation, Near field optics, Near field scanning optical microscopy, Optical simulations, Thermal effects, Superposition

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Proceedings Article | 8 May 2008 Paper

Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate

Tobias Meyer, Harald Braun, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proceedings Volume 6997, 699708 (2008) https://doi.org/10.1117/12.781277

KEYWORDS: Silicon carbide, Gallium nitride, Semiconductor lasers, Laser damage threshold, Quantum wells, Optical simulations, Waveguides, Electroluminescence, Indium gallium nitride, Aluminum

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Proceedings Article | 15 February 2008 Paper

True-blue InGaN laser for pico size projectors

U. Strauβ, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. Schwarz

Proceedings Volume 6894, 689417 (2008) https://doi.org/10.1117/12.761720

KEYWORDS: Indium gallium nitride, Magnesium, Laser damage threshold, Quantum wells, Semiconductor lasers, Luminescence, Reflectivity, Projection systems, Doping, Laser applications

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