Prof. Stephan W. Koch
Group Member at Philipps Univ Marburg
SPIE Involvement:
Conference Program Committee | Author | Instructor
Publications (114)

PROCEEDINGS ARTICLE | May 8, 2018
Proc. SPIE. 10638, Ultrafast Bandgap Photonics III
KEYWORDS: Long wavelength infrared, Mid-IR, Dispersion, Physics, Wave propagation, Ionization, Picosecond phenomena, Atmospheric propagation, Atmospheric modeling, Atmospheric optics

PROCEEDINGS ARTICLE | February 15, 2018
Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII
KEYWORDS: Semiconductors, Quantum wells, Mode locking, Electromagnetism, Pulsed laser operation

PROCEEDINGS ARTICLE | February 15, 2018
Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII
KEYWORDS: Semiconductors, Ultrafast phenomena, Refractive index, Quantum wells, Mode locking, Silicon, Coating, Reflectivity, Structural design, Pulsed laser operation

PROCEEDINGS ARTICLE | May 8, 2017
Proc. SPIE. 10193, Ultrafast Bandgap Photonics II
KEYWORDS: Long wavelength infrared, Ultrafast phenomena, Mid-IR, Short wave infrared radiation, Femtosecond phenomena, Polarization, Electrons, Physics, Kerr effect, Wave propagation, Nonlinear optics, Ionization, Atmospheric propagation, Atmospheric optics, Light wave propagation, Plasma

PROCEEDINGS ARTICLE | April 21, 2017
Proc. SPIE. 10087, Vertical External Cavity Surface Emitting Lasers (VECSELs) VII
KEYWORDS: Quantum wells, Fluctuations and noise, Ultraviolet radiation, Gallium arsenide, Quantum dots, Vertical external cavity surface emitting lasers, Heterojunctions, Nonlinear control, Current controlled current source

PROCEEDINGS ARTICLE | April 19, 2017
Proc. SPIE. 10098, Physics and Simulation of Optoelectronic Devices XXV
KEYWORDS: Photonic crystal fibers, Optical properties, Semiconductor lasers, Nonlinear dynamics, Solids, Supercontinuum sources, Supercontinuum generation, Laser damage threshold, Pulsed laser operation, Tin

Showing 5 of 114 publications
Conference Committee Involvement (18)
Physics and Simulation of Optoelectronic Devices XXVII
5 February 2019 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXVI
29 January 2018 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXV
30 January 2017 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXIV
15 February 2016 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXIII
9 February 2015 | San Francisco, California, United States
Showing 5 of 18 published special sections
Course Instructor
SC457: Modeling of Semiconductor Laser Gain Structures
This course surveys techniques for modeling semiconductor lasers. It begins with a tutorial discussion of the physical mechanisms contributing to semiconductor laser gain. The theoretical framework which incorporates these mechanisms into a unified laser theory is outlined. Approximations (such as quasiequilibrium, free-carrier, rate equation, effective relaxation rate) and their validity will be elucidated. Also included is an overview of bandstructure calculation methods. The second part of this course addresses the implementation of the above theory (with and without approximations) to study specific laser systems, such as VCSELs, where detailed knowledge of the gain spectrum is useful for optimized design. The process of incorporating the theory into a computer code will be discussed. We will describe the treatment of bulk, quantum well and quantum dot structures and the differences in their optical properties. Also, we will show how the numerical model allows us to analyze experimental data and optimize laser performance in material systems ranging from near UV through the visible, and all the way to the infrared where many important telecommunication applications exist.
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