Strain-balanced InAs/InAsSb superlattices can be tuned to absorb and emit across the mid- to long-wave infrared, and exhibit appropriate minority carrier lifetimes for high performance infrared photodetectors. The optical quality of this material has been shown to improve with the use of Bi as a surfactant. Specifically, InAs/InAsSb superlattices grown at 425 °C and 430 °C exhibit improved photoluminescence intensity for Bi/In flux ratios up to 1.0%, and optical quality improves further with increasing growth temperature and increasing Bi/In flux ratios up to 5.0%. The identification of optimal growth conditions for InAs/InAsSb superlattices with Bi surfactant, as well as further exploration of the impact of Bi surfactant is an important component to further developing and optimizing this infrared material system. <p> </p>Several strain-balanced InAs/InAsSb superlattices are grown using molecular beam epitaxy at temperatures ranging from 425 °C to 475 °C using Bi/In flux ratios ranging from 0.0% to 10.0%. The structural and optical properties of the samples are evaluated using X-ray diffraction, secondary ion mass spectrometry, and photoluminescence spectroscopy. Analysis of the mass spectrometry data indicates that surfactant Bi incorporates into the InAs/InAsSb material system with a sticking coefficient of 0.3% at 450 °C, yielding dopant-level concentrations for typical Bi/In surfactant flux ratios. Analysis of the integrated photoluminescence intensity indicates that photoluminescence efficiency is greatest with a 1.0% Bi/In flux ratio for growth at 425-430 °C, and a 5.0% Bi/In flux ratio for growth at 450-475 °C. The improvement in photoluminescence efficiency is associated with a longer Shockley-Read-Hall lifetime in the superlattices grown with Bi surfactant.