Dr. Steven Fu Profile

Dr. Steven Fu

at KLA-Tencor Corp

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 24 March 2006 Paper

Scatterometry measurements of line end shortening structures for focus-exposure monitoring

Kelvin Hung, Yung Feng Cheng, Jie Wei Sun, Benjamin Szu-Min Lin, Steven Fu, Thaddeus Dziura, Marcelo Cusacovich, Walter Mieher

Proceedings Volume 6152, 61521W (2006) https://doi.org/10.1117/12.655746

KEYWORDS: Single crystal X-ray diffraction, Semiconducting wafers, Data modeling, Scatterometry, Finite element methods, Lithography, Metrology, Process control, Photoresist processing, Scatter measurement

Read Abstract +

Proceedings Article | 17 May 2005 Paper

Feasibility of improving CD-SEM-based APC system for exposure tool by spectroscopic-ellipsometry-based APC system

Wen-Kuang Lin, Shih-Hsien Liao, Ronghao Tsai, Mike Yeh, Calvino Hsieh, Y. Yu, Benjamin Szu-Min Lin, Steven Fu, Thaddeus Dziura

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.598983

KEYWORDS: Critical dimension metrology, Single crystal X-ray diffraction, Etching, Scanners, Metrology, Process control, Spectroscopy, Control systems, Switching, Spectroscopic ellipsometry

Read Abstract +

Lot-to-lot ADI CD data are generally used to tighten the variation of exposure energy of an exposure tool through an APC feedback system. With decreasing device size, the process window of an exposure tool becomes smaller and smaller. Therefore, whether the ADI CD can reveal the real behavior of a scanner or not becomes more and more a critical question, especially for the polysilicon gate layer. CD-SEM has generally been chosen as the metrology tool for this purpose. Because of the limitations of top-down CD-SEMs, an APC system could be easily misled by improper ADI CD data if the CD data were measured on a T-topped photo resist. ArF resist shrinkage and line edge roughness are also traditional causes for improper CD feedback if the user did not operate the CDSEM carefully. Another candidate for this APC application is spectroscopic-ellipsometry-based scatterometry technology, commonly referred to as SpectraCD. In recent studies, SpectraCD was proven to be able to reveal profile variation with excellent stability. The feasibility of improving a CDSEM-based APC system by a SpectraCD-based system in a high-volume manufacturing fab is therefore worthy of study. This study starts from an analysis of the historical data for the polysilicon ADI CD of a 130 nm product. Two different sets of CD measured from the two different metrology tools were analyzed. In the fab, CDSEM was the metrology tool chosen for the APC feedback. The CD data measured by SpectraCD over a 2 month timeframe were plotted as a CD trend chart of the specific exposure tool. There are several trend-ups and trend-downs observed, even though the overall CD range is small. After a series of analyses, the exposure tool has been proven to be quite stable and the CD data measured by SpectraCD also reveal the real behavior of the exposure tool correctly. The scanner is shown to have been misled by improper CD feedback. In comparison with CDSEM, the linearity of the correlation between ADI and AEI CDs, which represents the consistence of etch bias, can also be improved from 0.4 to 0.8 by SpectraCD. The root causes are still under investigation, but one suspected reason is related to resist profile. All the analysis results will be reported in this paper. The data provided sufficient motivation for switching the APC feedback system of the fab from a CDSEM-based system to a SpectraCD-based system. The results of the new APC system will also be discussed.

Proceedings Article | 10 May 2005 Paper

Reaching a CD uniformity of below 3 nm for 300 mm post-etch wafers by adjusting the CD distribution of ADI wafers

Jie-Wei Sun, Yong-Fa Huang, Sho-Shen Lee, Chun-Chi Yu, Benjamin Lin, Steven Fu, Mike Slessor

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598979

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Etching, Metrology, Single crystal X-ray diffraction, Lithography, Spectroscopic ellipsometry, Inspection, Scatterometry, Temperature metrology

Read Abstract +

Proceedings Article | 24 May 2004 Paper

Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate

Mike Yeh, Shu-Ping Fang, Bo-Jau Tsau, Chih-Chung Huang, Benjamin Lin, Steven Fu, Jay Chen, Regina Freed, Ted Dziura, Mike Slessor

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536269

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Etching, Spectroscopic ellipsometry, Cadmium, Scanning electron microscopy, Transistors, Atomic force microscopy, Single crystal X-ray diffraction

Read Abstract +

Proceedings Article | 15 July 2003 Paper

Complete monitoring strategy to quantify matching and performance for multiple CDSEM in advanced fab

Pey-Yuan Lee, Chi-Shen Lo, Yi-Hung Chen, Thomas Teng, Steven Fu, Mico Chu, Jason Yee

Proceedings Volume 5041, (2003) https://doi.org/10.1117/12.485227

KEYWORDS: Metals, Data modeling, Materials processing, Material characterization, Diagnostics, Manufacturing, Carbon, Contamination, Plasma, Critical dimension metrology

Read Abstract +

Proceedings Article | 2 June 2003 Paper

Overlay excursion management through sample plan optimization and cycle time reduction

Xuemei Chen, Ming-Yeon Hung, Kelly Kuo, Steven Fu, Geoge Shanthikumar, Zhoujie Mao, Shiming Deng, Viral Hazari, Kevin Monahan, Mike Slessor, Amir Lev

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485043

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Time metrology, Error analysis, Statistical analysis, Process control, Lithography, Yield improvement, Scanners

Read Abstract +

Proceedings Article | 24 July 2002 Paper

Stable E-beam metrology on ArF resist for advanced process control

Chih-Ming Ke, Anthony Yen, Jason Yee, Mico Chu, Steven Fu, Eros Huang, Debbie Yeh

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474260

KEYWORDS: Plasma, Plasma etching, Etching, Plasma treatment, Metrology, Critical dimension metrology, Photoresist materials, Process control, Ions, Scanning electron microscopy

Read Abstract +

Proceedings Article | 30 December 1999 Paper

CD-SEM characterization of reticle-level pattern density effects

Raymond Yip, Mico Chu, Steven Fu, Dave Castro, Waiman Ng, Geoffrey Anderson, Micheal Sherrill, Norman Chen, Yao Ching Ku

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373321

KEYWORDS: Reticles, Etching, Scanning electron microscopy, Plasma etching, Metrology, Wet etching, Critical dimension metrology, Calibration, Cadmium, Plasma

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years