Dr. Steven J. Holmes Profile

Dr. Steven J. Holmes

at IBM Corp

SPIE Involvement:

Author

Publications (38)

Proceedings Article | 21 March 2017 Presentation + Paper

Presentation + Paper

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications

Nathan Marchack, Marwan Khater, Jason Orcutt, Josephine Chang, Steven Holmes, Tymon Barwicz, Swetha Kamlapurkar, William Green, Sebastian Engelmann

Proceedings Volume 10149, 101490F (2017) https://doi.org/10.1117/12.2258112

KEYWORDS: Line edge roughness, Silicon, Reactive ion etching, Waveguides, Sensor technology, Optical lithography, Silicon photonics, Waveguide sensors, Sensors, Integrated circuits, Plasma, Etching, Line width roughness, Photomasks, Plasma etching, Lithography

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Proceedings Article | 16 April 2013 Paper

Paper

Development of KrF hybrid resist for a dual-isolation application

Sen Liu, Steven Holmes, Kuang Jung Chen, Wu-song Huang, Ranee Kwong, Greg Breyta, Bruce Doris, Kangguo Cheng, Scott Luning, Maud Vinet, Laurent Grenouillet, Qing Liu, Matt Colburn, Chung-Hsi Wu

Proceedings Volume 8682, 86820T (2013) https://doi.org/10.1117/12.2011515

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Silicon, Reactive ion etching, Polymers, Lithographic illumination, Photoresist processing, Chemistry, Photoresist developing

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Proceedings Article | 26 March 2013 Paper

Paper

Directed self-assembly process implementation in a 300mm pilot line environment

Chi-Chun Liu, I. Cristina Estrada-Raygoza, Jassem Abdallah, Steven Holmes, Yunpeng Yin, Anthony Schepis, Michael Cicoria, David Hetzer, Hsinyu Tsai, Michael Guillorn, Melia Tjio, Joy Cheng, Mark Somervell, Matthew Colburn

Proceedings Volume 8680, 86801G (2013) https://doi.org/10.1117/12.2011610

KEYWORDS: Critical dimension metrology, Etching, Line width roughness, Semiconducting wafers, Optical lithography, Lithography, Chemical reactions, Photoresist processing, Polymethylmethacrylate, Directed self assembly

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Proceedings Article | 16 April 2012 Paper

Paper

Directed self-assembly defectivity assessment. Part II

Chris Bencher, He Yi, Jessica Zhou, Manping Cai, Jeffrey Smith, Liyan Miao, Ofir Montal, Shiran Blitshtein, Alon Lavi, Kfir Dotan, Huixiong Dai, Joy Cheng, Daniel Sanders, Melia Tjio, Steven Holmes

Proceedings Volume 8323, 83230N (2012) https://doi.org/10.1117/12.917993

KEYWORDS: Polymethylmethacrylate, Metrology, Image registration, Scanning electron microscopy, Inspection, Semiconducting wafers, Signal to noise ratio, Polymers, Optical lithography, Directed self assembly

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Proceedings Article | 19 March 2012 Paper

Paper

Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials

Sen Liu, Kuang-Jung Chen, Wu-Song Huang, Steven Holmes, Karen Huang, Nicolette Fender, Ranee Kwong, Brian Osborn, Cherry Tang, Chung-Hsi Wu, Mark Slezak

Proceedings Volume 8325, 83251B (2012) https://doi.org/10.1117/12.916158

KEYWORDS: Polymers, Reflectivity, Silicon, Semiconducting wafers, Bottom antireflective coatings, Lithography, Chromophores, Critical dimension metrology, Silicon films, Solids

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Proceedings Article | 16 April 2011 Paper

Paper

Critical challenges for non-critical layers

J. M. Gomez, I. Popova, B. Zhang, H. Kry, S. Holmes, S. Nakagawa, T. Murakami, Chan Sam Chang, Cheol Kim

Proceedings Volume 7972, 79722T (2011) https://doi.org/10.1117/12.879866

KEYWORDS: Photoresist processing, Lithography, Germanium, Photomasks, Semiconducting wafers, Critical dimension metrology, Tolerancing, Reflectivity, Etching, Scanners

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Proceedings Article | 16 April 2011 Paper

Paper

Developable BARC (DBARC) technology as a solution to today's implant lithography challenges

James Cameron, Jin Wuk Sung, Sabrina Wong, Adam Ware, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Steve Holmes, Irene Popova, Ranee Kwong, Pushkara Rao Varanasi

Proceedings Volume 7972, 797214 (2011) https://doi.org/10.1117/12.881614

KEYWORDS: Lithography, Optical lithography, Control systems, Reflectivity, Coating, Photoresist processing, Antireflective coatings, Etching, Standards development, Bottom antireflective coatings

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Proceedings Article | 16 April 2011 Paper

Paper

Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Proceedings Volume 7972, 79720G (2011) https://doi.org/10.1117/12.881489

KEYWORDS: Photoresist processing, Reactive ion etching, Lithography, Photomasks, Dielectrics, Etching, Scanning electron microscopy, Double patterning technology, Semiconductors, Optical lithography

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Proceedings Article | 2 April 2011 Paper

Paper

Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Cheng, Daniel Sanders, Melia Tjio, Hoa Truong, Steven Holmes, William Hinsberg

Proceedings Volume 7970, 79700F (2011) https://doi.org/10.1117/12.881293

KEYWORDS: Semiconducting wafers, Optical lithography, Etching, Polymers, Lithography, Semiconductors, Inspection, Chemical vapor deposition, Silicon, Directed self assembly

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Proceedings Article | 23 March 2011 Paper

Paper

Towards manufacturing of advanced logic devices by double-patterning

Chiew-seng Koay, Scott Halle, Steven Holmes, Karen Petrillo, Matthew Colburn, Youri van Dommelen, Aiqin Jiang, Michael Crouse, Shannon Dunn, David Hetzer, Shinichiro Kawakami, Jason Cantone, Lior Huli, Martin Rodgers, Brian Martinick

Proceedings Volume 7973, 79730F (2011) https://doi.org/10.1117/12.879618

KEYWORDS: Semiconducting wafers, Overlay metrology, Optical alignment, Silicon, Scanners, Scanning electron microscopy, Critical dimension metrology, Data modeling, Manufacturing, Double patterning technology

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Proceedings Article | 30 March 2010 Paper

Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain

Stefan Harrer, John Arnold, Dario Goldfarb, Steven Holmes, Rex Chen, Cherry Tang, Mark Slezak, Nicolette Fender, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Shyng-Tsong Chen, Dave Horak, Yunpeng Yin, Rao Varanasi, Matthew Colburn

Proceedings Volume 7639, 763919 (2010) https://doi.org/10.1117/12.846593

KEYWORDS: Back end of line, Dielectrics, Etching, Lithography, Reactive ion etching, Photoresist materials, Optical lithography, Semiconducting wafers, Copper, Polishing

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A novel back-end-of-line (BEOL) patterning and integration process termed Multi-Level Multiple Exposure (MLME) technique is herein introduced. The MLME technique simplifies BEOL dual damascene (DD) integration while simultaneously being applicable to all BEOL levels. It offers a patterning resolution reaching into the sub-100nm region and improves semiconductor manufacturing cost and throughput. MLME employs a dual-layer imaging stack (via + trench resists) cast onto a customized etch transfer multilayer stack. This process implements a strict litho-litho-etch sequence for transferring the trench- and via-patterns into the dielectric layer. Under the MLME scheme, two imaging steps (i.e. via- and trench-level patterning) are executed consecutively followed by a dry etch process that transfers the lithographically-formed patterns into the customized etch transfer multilayer stack and further into the dielectric layer. The MLME integration scheme not only decreases the number of overall process steps for the full DD BEOL process but also eliminates several inter-tool wafer exchange sequences as performed in a conventional litho-etch-litho-etch process flow. All MLME process steps were demonstrated i.e. combined 193nm-dry dual-resist layer MLME via- and trench-lithography, full pattern transfer of via- and trench-patterns into the dielectric layer using reactive ion etching (RIE), as well as electroplating and polishing of the DD patterns. This paper provides a detailed description of both post-lithography steps of the DD process for a DD BEOL structure, i.e. (i) the RIE-pattern transfer process with the customized multilayer stack, and (ii) the metallization process completing the DD process for one BEOL layer. Furthermore, the integration capabilities of the MLME technique were demonstrated and characterized by generating an electrically functional via-chain connecting two neighboring BEOL layers fabricated by subsequently applying the MLME approach to both layers. An exhaustive description and evaluation of MLME lithographic patterning is given in an accompanying paper.

Proceedings Article | 26 March 2010 Paper

Paper

Process characterization of pitch-split resist materials for application at 16nm node

Steven Holmes, Cherry Tang, John Arnold, Yunpeng Yin, Rex Chen, Nicolette Fender, Brian Osborn, Gary Dabbagh, Sen Liu, Matthew Colburn, Rao Varanasi, Mark Slezak

Proceedings Volume 7639, 76392X (2010) https://doi.org/10.1117/12.846891

KEYWORDS: Lithography, Photoresist processing, Semiconducting wafers, Double patterning technology, Semiconductors, Photomasks, Reactive ion etching, Silicon, Scanning electron microscopy, Particles

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Proceedings Article | 26 March 2010 Paper

Paper

Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning

Dario Goldfarb, Stefan Harrer, John Arnold, Steven Holmes, Rex Chen, Cherry Tang, Nicolette Fender, Mark Slezak, Ronald Della Guardia, Eric Joseph, Sebastian Engelmann, Roa Varanasi, Matthew Colburn

Proceedings Volume 7639, 76390I (2010) https://doi.org/10.1117/12.846443

KEYWORDS: Optical lithography, Einsteinium, Back end of line, Etching, Dielectrics, Semiconducting wafers, Lithography, Photoresist materials, Nanoimprint lithography, Reactive ion etching

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Proceedings Article | 4 March 2010 Paper

Paper

Evaluation of double-patterning techniques for advanced logic nodes

Chiew-Seng Koay, Steven Holmes, Karen Petrillo, Matthew Colburn, Sean Burns, Shannon Dunn, Jason Cantone, David Hetzer, Shinichiro Kawakami, Youri van Dommelen, Aiqin Jiang, Michael Many, Robert Routh, Lior Huli, Brian Martinick, Martin Rodgers, Hideyuki Tomizawa, Sumanth Kini

Proceedings Volume 7640, 764009 (2010) https://doi.org/10.1117/12.846769

KEYWORDS: Double patterning technology, Semiconducting wafers, Scanners, Overlay metrology, Photoresist processing, Chemical reactions, Semiconductors, Thin film coatings, Scanning electron microscopy, Logic

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SPIE Journal Paper | 1 January 2010

22-nm-node technology active-layer patterning for planar transistor devices

Ryoung-Han Kim, Steven Holmes, Scott Halle, Vito Dai, Jason Meiring, Aasutosh Dave, Matthew Colburn, Harry Levinson

JM3, Vol. 9, Issue 01, 013001, (January 2010) https://doi.org/10.1117/12.10.1117/1.3302125

KEYWORDS: Resolution enhancement technologies, Lithography, Printing, Optical lithography, Image processing, Optical proximity correction, Polarization, Transistors, Line edge roughness, Photoresist processing

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Proceedings Article | 1 April 2009 Paper

Paper

Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes

Steven Holmes, Chiew-Seng Koay, Karen Petrillo, Kuang-Jung Chen, Matthew Colburn, Jason Cantone, Kenichi Ueda, Andrew Metz, Shannon Dunn, Youri van Dommelen, Michael Crouse, Judy Galloway, Emil Schmitt-Weaver, Aiquin Jiang, Robert Routh, Cherry Tang, Mark Slezak, Sumanth Kini, Tony DiBiase

Proceedings Volume 7273, 727305 (2009) https://doi.org/10.1117/12.828483

KEYWORDS: Overlay metrology, Semiconducting wafers, Double patterning technology, Lithography, Semiconductors, Defect inspection, Scanning electron microscopy, Logic, Polymers, Photomasks

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Proceedings Article | 16 March 2009 Paper

Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, M. Colburn

Proceedings Volume 7274, 727404 (2009) https://doi.org/10.1117/12.814433

KEYWORDS: Etching, Lithography, Printing, Optical lithography, Double patterning technology, Resolution enhancement technologies, Logic, Metals, Photomasks, Tolerancing

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Proceedings Article | 16 March 2009 Paper

Paper

22 nm technology node active layer patterning for planar transistor devices

Ryoung-Han Kim, Steven Holmes, Scott Halle, Vito Dai, Jason Meiring, Aasutosh Dave, Matthew Colburn, Harry Levinson

Proceedings Volume 7274, 72742X (2009) https://doi.org/10.1117/12.814277

KEYWORDS: Resolution enhancement technologies, Lithography, Optical lithography, Image processing, Transistors, Printing, Optical proximity correction, Photoresist processing, Design for manufacturing, Process control

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Proceedings Article | 29 March 2006 Paper

Paper

Silicon containing polymer in applications for 193-nm high-NA lithography processes

Sean Burns, Dirk Pfeiffer, Arpan Mahorowala, Karen Petrillo, Alexandera Clancy, Katherina Babich, David Medeiros, Scott Allen, Steven Holmes, Michael Crouse, Colin Brodsky, Victor Pham, Yi-Hsiung Lin, Kaushal Patel, Naftali Lustig, Allen Gabor, Christopher Sheraw, Phillip Brock, Carl Larson

Proceedings Volume 6153, 61530K (2006) https://doi.org/10.1117/12.657197

KEYWORDS: Silicon, Reflectivity, Etching, Photoresist materials, Polymers, Lithography, Oxides, Silicon films, Reactive ion etching, Optical lithography

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Proceedings Article | 20 March 2006 Paper

Paper

Investigation of immersion related defects using pre- and post-wet experiments

Stefan Brandl, Robert Watso, Bill Pierson, Steve Holmes, Yayi Wei, Karen Petrillo, Kevin Cummings, Frank Goodwin

Proceedings Volume 6154, 61540T (2006) https://doi.org/10.1117/12.656697

KEYWORDS: Semiconducting wafers, Digital watermarking, Photoresist processing, Polymers, Scanners, Coating, Defect inspection, Standards development, Platinum, Bridges

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Proceedings Article | 4 May 2005 Paper

Paper

Progress toward developing high performance immersion compatible materials and processes

Karen Petrillo, Kaushal Patel, Rex Chen, Wenjie Li, Ranee Kwong, Peggy Lawson, Rao Varanasi, Chris Robinson, Steven Holmes, Dario Gil, Kurt Kimmel, Mark Slezak, Gary Dabbagh, Takashi Chiba, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601621

KEYWORDS: Polymers, Lithography, Immersion lithography, Materials processing, Semiconducting wafers, Particles, Photoresist materials, Image processing, Photoresist processing, Scanners

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Proceedings Article | 28 May 2004 Paper

Paper

BEOL lithography for early development at the 65-nm node

Ronald DellaGuardia, Ranee Kwong, Wenjie Li, Peggy Lawson, Martin Burkhardt, Ioana Grauer, Qiang Wu, M. Angyal, H. Hichri, Ian Melville, K. Kumar, Y. Lin, Steven Holmes, R. Varanasi, T. Spooner, D. McHerron

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544238

KEYWORDS: Lithography, Etching, Photomasks, Semiconducting wafers, Metals, Critical dimension metrology, Silicon, Image processing, Back end of line, Finite element methods

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Proceedings Article | 12 June 2003 Paper

Paper

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond

Dirk Pfeiffer, Arpan Mahorowala, Katherina Babich, David Medeiros, Karen Petrillo, Marie Angelopoulos, Wu-Song Huang, Scott Halle, Colin Brodsky, Scott Allen, Steven Holmes, Ranee Kwong, Robert Lang, Phillip Brock

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485178

KEYWORDS: Silicon, Etching, Lithography, Polymers, Oxides, Photoresist processing, Reflectivity, Silicon films, 193nm lithography, Bottom antireflective coatings

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Proceedings Article | 14 September 2001 Paper

Paper

Characterization of linewidth variation on 248- and 193-nm exposure tools

Allen Gabor, Timothy Brunner, Jia Chen, Norman Chen, Sadanand Deshpande, Richard Ferguson, David Horak, Steven Holmes, Lars Liebmann, Scott Mansfield, Antoinette Molless, Christopher Progler, Paul Rabidoux, Deborah Ryan, Peter Talvi, Len Tsou, Ben Vampatella, Alfred Wong, Qingyun Yang, Chienfan Yu

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435708

KEYWORDS: Reticles, Semiconducting wafers, Binary data, Lithography, Scanning electron microscopy, Critical dimension metrology, Scanners, Photomasks, Logic, Etching

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Proceedings Article | 14 September 2001 Paper

Paper

193 lithography and RELACS processing for BEOL lithography

Ronald DellaGuardia, Karen Petrillo, Jia Chen, Paul Rabidoux, Timothy Dalton, Steven Holmes, Linda Hadel, K. Malone, Arpan Mahorowala, S. Greco, Richard Ferguson

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435636

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Printing, Etching, Photoresist processing, Optical proximity correction, 193nm lithography, Photoresist materials, Resistance

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Proceedings Article | 11 June 1999 Paper

Paper

Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution

Steven Holmes, Toshiharu Furukawa, Mark Hakey, David Horak, Paul Rabidoux, K. Rex Chen, Wu-Song Huang, Mahmoud Khojasteh, Niranjan Patel

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350218

KEYWORDS: Reticles, Lithography, Deep ultraviolet, Photomasks, Non-optical lithography, Image processing, Logic, Phase shifts, Chlorine, Image resolution

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Proceedings Article | 14 June 1996 Paper

Paper

Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)

Will Conley, Gregory Breyta, William Brunsvold, Richard Di Pietro, Donald Hofer, Steven Holmes, Hiroshi Ito, Ronald Nunes, Gabrielle Fichtl, Peter Hagerty, James Thackeray

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241840

KEYWORDS: Photoresist materials, Semiconducting wafers, Etching, Polymers, Lithography, Silicon, Photoresist developing, Deep ultraviolet, Head-mounted displays, Antireflective coatings

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Proceedings Article | 17 May 1994 Paper

Paper

Substrate contamination effects in the processing of chemically amplified DUV photoresists

John Sturtevant, Steven Holmes, Stephen Knight, Denis Poley, Paul Rabidoux, Linda Somerville, Thomas McDevitt, Anthony Stamper, Ed Valentine, Will Conley, Ahmad Katnani, James Fahey

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175469

KEYWORDS: Contamination, Silicon, Deep ultraviolet, Photoresist materials, Semiconducting wafers, Titanium, Oxides, Antireflective coatings, Lithography, Interfaces

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Proceedings Article | 16 May 1994 Paper

Paper

Further improvements in CGR formulation and process

William Brunsvold, Will Conley, Jeffrey Gelorme, Ronald Nunes, Ratnam Sooriyakumaran, Steven Holmes, John Sturtevant

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175350

KEYWORDS: Semiconducting wafers, Reticles, Etching, Image processing, Excimer lasers, Materials processing, Manufacturing, Deep ultraviolet, Lithography, Imaging systems

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Proceedings Article | 16 May 1994 Paper

Paper

Improved reflectivity control of APEX-E positive tone deep UV photoresist

Will Conley, Ravindra Akkapeddi, James Fahey, George Hefferon, Steven Holmes, Gary Spinillo, John Sturtevant, Kevin Welsh

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175360

KEYWORDS: Absorbance, Lithography, Photoresist materials, Deep ultraviolet, Reflectivity, Scanning electron microscopy, Photography, Semiconducting wafers, Polymers, Excimer lasers

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Proceedings Article | 1 May 1994 Paper

Paper

Use of scatterometric latent-image detector in closed-loop feedback control of linewidth

John Sturtevant, Steven Holmes, Theodore Van Kessel, Michael Miller, Duncan Mellichamp

Proceedings Volume 2196, (1994) https://doi.org/10.1117/12.174162

KEYWORDS: Feedback control, Sensors, Image sensors, Chemically amplified resists, Calibration, Semiconducting wafers, Control systems, Scanning electron microscopy

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Proceedings Article | 15 September 1993 Paper

Paper

Negative DUV photoresist for 16Mb-DRAM production and future generations

Will Conley, William Brunsvold, Richard Ferguson, Jeffrey Gelorme, Steven Holmes, Ronald Martino, Magda Petryniak, Paul Rabidoux, Ratnam Sooriyakumaran, John Sturtevant

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154744

KEYWORDS: Semiconducting wafers, Photoresist materials, Deep ultraviolet, Lithography, Logic, Manufacturing, Silicon, Etching, Photoresist developing, Ultraviolet radiation

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Proceedings Article | 4 August 1993 Paper

Paper

Postexposure bake as a process-control parameter for chemically amplified photoresist

John Sturtevant, Steven Holmes, Theodore Van Kessel, Philip Hobbs, Jerry Shaw, Robert Jackson

Proceedings Volume 1926, (1993) https://doi.org/10.1117/12.149018

KEYWORDS: Semiconducting wafers, Process control, Diffraction, Scanning electron microscopy, Deep ultraviolet, Photoresist materials, Photomasks, Critical dimension metrology, Sensors, Technetium

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Proceedings Article | 9 July 1992 Paper

Paper

Manufacturing implementation of deep-UV lithography for 500-nm devices

Steven Holmes, Albert Bergendahl, Diana Dunn, J. Guidry, Mark Hakey, Karey Holland, Andy Horr, Dean Humphrey, Stephen Knight, D. Macaluso, Katherine Norris, Denis Poley, Paul Rabidoux, John Sturtevant, Dean Writer

Proceedings Volume 1671, (1992) https://doi.org/10.1117/12.136040

KEYWORDS: Deep ultraviolet, Lithography, Manufacturing, Photomasks, Semiconducting wafers, Wafer testing, Photoresist processing, Reticles, Scanning electron microscopy, Photoresist developing

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Proceedings Article | 1 June 1992 Paper

Paper

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist

John Sturtevant, Steven Holmes, Paul Rabidoux

Proceedings Volume 1672, (1992) https://doi.org/10.1117/12.59753

KEYWORDS: Deep ultraviolet, Semiconducting wafers, Diffusion, Chemically amplified resists, Contamination, Chlorine, Temperature metrology, Scanning electron microscopy, Photography, Manufacturing

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Proceedings Article | 1 June 1991 Paper

Paper

Airborne chemical contamination of a chemically amplified resist

Scott MacDonald, Nicholas Clecak, H. Wendt, C. Grant Willson, Clinton Snyder, C. Knors, N. Deyoe, John Maltabes, James Morrow, Anne McGuire, Steven Holmes

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46354

KEYWORDS: Semiconducting wafers, Carbon, Lithography, Contamination, Manufacturing, Chemically amplified resists, Skin, Interfaces, Silicon, Liquids

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Proceedings Article | 1 June 1990 Open Access

Open Access

Paper

1X deep-UV lithography with chemical amplification for 1-micron DRAM production

John Maltabes, Steven Holmes, James Morrow, Roger Barr, Mark Hakey, Gregg Reynolds, William Brunsvold, C. Grant Willson, Nicholas Clecak, Scott MacDonald, Hiroshi Ito

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20090

KEYWORDS: Deep ultraviolet, Semiconducting wafers, Image processing, Lithography, Manufacturing, Photoresist processing, Industrial chemicals, Radon, Photomasks, Chemically amplified resists

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Proceedings Article | 1 June 1990 Paper

Paper

Deep-ultraviolet lithography for 500-nm devices

Steven Holmes, Ruth Levy, Albert Bergendahl, Karey Holland, John Maltabes, Stephen Knight, Katherine Norris, Denis Poley

Proceedings Volume 1264, (1990) https://doi.org/10.1117/12.20180

KEYWORDS: Photomasks, Deep ultraviolet, Lithography, Optical lithography, Semiconducting wafers, Optical alignment, Image processing, Etching, Overlay metrology, Wafer-level optics

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Showing 5 of 38 publications

Conference Committee Involvement (2)

Advances in Resist Technology and Processing XXII

28 February 2005 | San Jose, California, United States

Advances in Resist Technology and Processing XXI

23 February 2004 | Santa Clara, California, United States

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