Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi-patterning (LELELE) for via hole patterning with 193-i. It induced local pattern fidelity error such like CDU, CER, Pattern placement error. Exactly, EUV must be desirable scaling-driving tool, however, specific technical issue, named RLS (Resolution-LER-Sensitivity) triangle, obvious remaining issue. In this work, we examined hole patterning sensitizing (Lower dose approach) utilizing hole patterning restoration technique named “CD-Healing” as post-Litho. treatment.
Both local variability and optical proximity correction (OPC) errors are big contributors to the edge placement error (EPE) budget which is closely related to the device yield. The post-litho contact hole healing will be demonstrated to meet after-etch local variability specifications using a low dose, 30mJ/cm<sup>2</sup> dose-to-size, positive tone developed (PTD) resist with relevant throughput in high volume manufacturing (HVM). The total local variability of the node 5nm (N5) contact holes will be characterized in terms of local CD uniformity (LCDU), local placement error (LPE), and contact edge roughness (CER) using a statistical methodology. The CD healing process has complex etch proximity effects, so the OPC prediction accuracy is challenging to meet EPE requirements for the N5. Thus, the prediction accuracy of an after-etch model will be investigated and discussed using ASML Tachyon OPC model.