Ms. Suleni Tunggal Mulia Profile

Suleni Tunggal Mulia

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Proceedings Article | 17 December 2003 Paper

SLF27 energy difference method to specify printability of contact hole defects

T. M. Suleni, T. Y. Peng

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518002

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Inspection, Contamination, Binary data, Scanning electron microscopy, Photomasks, Cameras, Defect detection

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The CD measurement method has been long used by the industry to specify contact hole mis-sizing defects on reticles. However with the shrinking of feature size beyond sub-wavelength, it has been found that this method of specifying contact hole defects do not always correlate well to CD differences on wafers. A better correlation can be achieved by using the energy difference (total flux energy) review tool available on the SLF27. The energy difference review tool measures the total energy transmitted through a manually drawn box. In this paper, defects from production reticles are used to compare the sizes of these defects with their energy differences on reticle against the CD measurements on wafers. Defect data from Binary reticles of undersized and oversized contacts holes are evaluated. Strong correlation between mis-sized contact holes measurement on wafer SEM and energy difference review tool on the SLF27 (Reticle Inspection tool with 365nm UV wavelength) is observed. The correlation is particularly strong for undersized contact holes. The correlation is helpful in identifying good repair and bad repair, since the correlation still holds true on contact holes with repair stain. Though it is believed the correlation stays true for PSM, a more thorough evaluation is required for PSM reticles at this time. From these data, a new defect control specification on reticles, using the energy difference method has been determined and used to specify mis-sizing or acceptable localized CD error on reticle to prevent yield impact on wafer.

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