Physical vapor deposition in horizontal systems has been used to grow crystal thin-film of organic semiconductor pentacene. Using 10~30mg of starting material, 20~30mm sized crystals thin-film, suitable for characterization measurements or device fabricated, have been grown. And we have measured the sample of pentacene crystal thin-film using TEM. X-ray diffraction electron microscopy. The results indicated that the crystal lattice array order.
One of the most important technological challenges in the manufacture of high power lasers is to determine device quality and reliability without damaging the device itself. The low-frequency electrical noise has shown potential as a sensitive non-destructive indicator of device quality and reliability. In this paper, the noise levels in semiconductor lasers (LDs) operating in both unconducting state (Svl) and conducting state (Sv2) are measured. From our investigation, the device reliability is associated with not only Sv1 but also Sv2, if one of them is higher, the device is usually reliable. When the noise is used to estimate device reliability, both Sv1 and Sv2 should be measured and considered.
We present a novel, non-destructive technique which the low- frequency terminal electrical noise (TEN) is used to study facet stability of semiconductor lasers. We do different treatments for the facet and measure the changes of TEN before and after treatments. The results indicate that TEN level at low injection shows facet stability and can be used to predict facet stability of the device.
The low frequency electrical noise and electric derivative (IdV/dI-I) are measured at different conditions. The correlation between the noise and device quality is discussed, the results indicate that the low frequency electrical noise of 808 nm high power semiconductor laser is mainly 1/f noise and has good relation with device quality.