Applications of 850 nm VCSELs have bloomed in recent years arising from their low cost, and the ease of forming one- and two-dimensional arrays. In addition to the traditional measures of device lifetime, operation over a wide temperature range and link length, the figures of merit increasingly include power consumption (pJ/bit), footprint (bits/mm<sup>2</sup>) and cost ($/Gb/s). As 1 × 12 arrays of 10G VCSELs are widely adopted, there is a clear need for improvement along all these fronts. This is achieved through development of VCSELs operating at higher data rates, and modifications to the oxide VCSEL structure. In this paper, we discuss the development of VCSELs with electrostatic discharge protection, and high bandwidth for operation at 10 – 25 Gb/s.
In this paper we will discuss 14 Gb/s 850 nm oxide VCSEL performance and reliability. The device is targeted for the
16G Fibre Channel standard. The 14 Gb/s 850 nm oxide VCSEL meets the standard's specifications over the extended
temperature range to support transceiver module operation from 0C to 85C.
We discuss a technique for tailoring the emission bandwidth of a quantum dot (QD) superluminescent light emitting diode (SLED). We utilize a multi-dot-in-well (DWELL) structure with different indium compositions within each well which we term dots in compositionally modulated well (DCMWELL) structures. One key aspect of our design is the overlap of the ground and excited state emission of different DWELL layers. Such SLED devices operate CW at room temperature with powers in excess of 2.5mW per facet, and exhibit a single peak almost 85 nm wide, which is almost flat topped.