Mr. Sungwoo Park Profile

Sungwoo Park

at Seoul National Univ

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Proceedings Article | 25 March 2019 Presentation + Paper

Multiscale approach for modeling EUV patterning of chemically amplified resist

Hyungwoo Lee, Muyoung Kim, Junghwan Moon, Sungwoo Park, Byunghoon Lee, Changyoung Jeong, Maenghyo Cho

Proceedings Volume 10960, 1096008 (2019) https://doi.org/10.1117/12.2514840

KEYWORDS: Diffusion, Polymers, Chemical reactions, Extreme ultraviolet lithography, Line edge roughness, Extreme ultraviolet, Chemically amplified resists, Photoresist materials, Optical lithography

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Extreme ultraviolet (EUV) lithography is one of the most promising techniques in the semiconductor industry to enhance resolution, line edge roughness (LER) and sensitivity of chemically amplified resist (CAR) pattern. Post exposure bake (PEB) process, a major process in EUV lithography, has been studied by experimental approach, but they are confronted by time-consuming tasks for massive combinatorial research. Also, theoretical models have been reported to explain fundamental mechanism of the process, but the single-scale simulation studies show obvious limitations for accurate prediction of photo-chemical reactions in photoresist (PR) matrix and the resulting morphology of line pattern. In order to settle the problem, a multiscale model (density functional theory (DFT)-molecular dynamics (MD)-finite difference method (FDM) integration) was developed to simulate chemical reactions including PAG dissociation, acid diffusion, and deprotection of photoresist in our previous study, which is based on two-components system (PAG and PR). Herein, we propose the multiscale model for three molecular components consisting of PAG, PR, and photo-decomposable quencher (PDQ) which is widely used for fine PR pattern fabrication by neutralizing acid in unexposed region of the resist. The newly constructed model reflects more realistic acid diffusion and chemical reactions on PEB process. This achievement will be helpful to identify critical design parameters and suggest optimized design materials in EUV lithography process.

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