We report that the vacuum annealing of MgO films at 225°C results in the removal of water based contamination and
the secondary electron emission coefficient increases from 0.09 to 0.15. The effective secondary electron emission yield
increases from 0.2 to 0.75 at 200 mbar chamber pressure, as temperature increases to 250 °C. The effective secondary
electron emission yield at 200, 350 and 800 mbar pressure shows similar trend during the heating as well as cooling of
the MgO sample. Thermionic emission, smaller surface band bending and the removal of impurities at high temperature
are possible reasons for the increase in secondary electrons of MgO thin films.
We report the effect of Si, Cr, Sc doping in the crystalline structure, optical and discharge characteristics of MgO
thin films. Silicon and multiple (Si, Cr, Sc) doped MgO thin films demonstrate higher secondary electron emission
(SEE). Si doping with Cr and Sc doping in MgO films shows much higher SEE as compared to pure and only Si doped
MgO films. The importance of optimum amount of Sc doping is seen in our study where SEE reduced with further
increase in Sc doping. The structural attributes of MgO films are correlated to the observed changes in discharge
characteristics in the context of varying amount of Si, Sc, and Cr doping.