In this work, we report theoretical and experimental results on the use of Cadmium Telluride (CdTe) doped with Zinc
(Zn) as core material for the development of all-optical photonic devices. We include the design of optical waveguides
for strong field confinement, technological processes to grow CdTe on 6" or 8" wafers (suitable for high-volume
manufacturing) as well as the fabrication and optical characterization of optical waveguides with a CdTe core.
Cadmium Telluride (CdTe) is a well known photonic material in the fields of infrared imaging and solar cells. Its nonlinear optical properties also make it a promising candidate for novel telecom applications that would utilize its high Kerr coefficient to produce advanced logical devices such as switches, routers and wavelength converters. The large photorefractive effect observed in CdTe also makes possible high-speed devices suitable for optical data processing. In order to advance such photorefractive waveguide applications, we have deposited CdTe films on silicon substrates with a native oxide layer using the pulsed laser deposition technique (PLD). Silicon was chosen as the substrate material as it is suitable for the monolithic integration of logical devices. Maintaining an oxide layer was deemed necessary as a high refractive index mismatch is desirable for high-index contrast waveguide based applications and such an index mismatch could be provided by a reasonably thick layer of SiO2. Films exhibiting some structural deficiencies, but with high optical quality were deposited through the optimization of the growth parameters. X-ray diffraction data indicates that the films are  oriented with rocking curves of substantial width. Atomic force microscopy images confirm that the films have a smooth surface morphology as was suggested by their mirror-like appearance. Using the optimum growth conditions, CdTe films doped with germanium were also deposited as this dopant introduces deep donor levels that enhance the photorefractive effect. A comparison of the optical properties obtained from the doped and undoped films indicate that impurities can have a marked effect on the index of refraction and extinction coefficient. Such alterations to the optical constants must be considered in the design of waveguide structures.