Mr. Tae-Seung Eom Profile

Tae-Seung Eom

Principal Engineer at SK Hynix Inc

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Author

Publications (21)

Proceedings Article | 1 April 2013 Paper

Patterning challenges of EUV lithography for 1X-nm node DRAM and beyond

Tae-Seung Eom, Hong-Ik Kim, Choon-Ky Kang, Yoon-Jung Ryu, Seung-Hyun Hwang, Ho-Hyuk Lee, Hee-Youl Lim, Jeong-Su Park, Noh-Jung Kwak, Sungki Park

Proceedings Volume 8679, 86791J (2013) https://doi.org/10.1117/12.2011687

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Optical lithography, Optical proximity correction, Manufacturing, Scanners, Photomasks, Critical dimension metrology, Overlay metrology, Line width roughness

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Proceedings Article | 2 April 2010 Paper

Improvement of the process overlay control for sub-40-nm DRAM

Sarohan Park, Eun-Ha Lee, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Kyu-Tae Sun, Tae-Seung Eom, Noh-Jung Kwak, Sung-Ki Park

Proceedings Volume 7638, 76382H (2010) https://doi.org/10.1117/12.846489

KEYWORDS: Semiconducting wafers, Overlay metrology, Chemical mechanical planarization, Process control, Distortion, Photomasks, Optical alignment, Optical lithography, Data modeling, Control systems

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Proceedings Article | 4 March 2010 Paper

Applications of MoSi-based binary intensity mask for sub-40nm DRAM

Tae-Seung Eom, Eun-Kyoung Shin, Eun-Ha Lee, Yoon-Jung Ryu, Jun-Taek Park, Sunyoung Koo, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Sarohan Park, Kyu-Tae Sun, Noh-Jung Kwak, Sung-Ki Park

Proceedings Volume 7640, 76402J (2010) https://doi.org/10.1117/12.846728

KEYWORDS: Photomasks, Binary data, Transmittance, Diffraction, Chromium, Polarization, Lithography, Scanners, Nanoimprint lithography, Optical lithography

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In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination and mask materials in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:760Å , transmittance 6% ), conventional Cr ( 1030Å ) BIM (Binary Intensity Mask), MoSi-based BIM ( MoSi:590Å , transmittance 0.1%) and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is a line and space pattern and the other is a contact hole pattern through mask structure. Various line and space pattern is also through 38nm to 50nm half pitch studied for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and the first diffraction orders are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, thereby transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in the case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light.1 Process windows and mask error enhancement factors are measured with respect to several types of mask structure. In the case of one dimensional line and space pattern, MoSi-based BIM and conventional Cr BIM show the best performance through various pitches. But in the case of hole DRAM cell pattern, it is difficult to find out the advantage of BIM except of exposure energy difference. Finally, it was observed that MoSi-based binary intensity mask for sub- 40nm DRAM has advantage for one dimensional line and space pattern.

Proceedings Article | 18 March 2009 Paper

EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Proceedings Volume 7271, 72711G (2009) https://doi.org/10.1117/12.814407

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Scanners, Critical dimension metrology, Extreme ultraviolet, Silicon, Optical lithography, Deep ultraviolet, Semiconducting wafers, Laser scanners

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Proceedings Article | 18 March 2009 Paper

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Tae-Seung Eom, Sarohan Park, Jun-Taek Park, Chang-Moon Lim, Sunyoung Koo, Yoon-Suk Hyun, HyeongSoo Kim, Byung-Ho Nam, Chang-Reol Kim, Seung-Chan Moon, Noh-Jung Kwak, Sungki Park

Proceedings Volume 7271, 727115 (2009) https://doi.org/10.1117/12.814378

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Double patterning technology, Lithography, Etching, Critical dimension metrology, Scanners, Immersion lithography

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In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV technology is positioned on essential stage because development stage of device manufacturer is going down sub-40nm technology node. Currently lithography technology, in order to improve the limitation of ArF immersion lithography, double patterning technology (DPT) and spacer patterning technology (SPT) have been examined intensively. However, double patterning and spacer patterning technology are not cost-effective process because of complexity of lithography process such as many hard mask stacks and iterative litho, etch process. Therefore, lithography community is looking forward to improving maturity of EUVL technology. In order to overcome several issues on EUV technology, many studies are needed for device application. EUV technology is different characteristics with conventional optical lithography which are non-telecentricity and mask topography effect on printing performance. The printed feature of EUV is shifted and biased on the wafer because of oblique illumination of the mask. Consequently, target CD and pattern position are changed in accordance with pattern direction, pattern type and slit position of target pattern.1 For this study, we make sub-40nm DRAM mask for ArF immersion and EUV lithography. ArF attenuated PSM (Phase Shift Mask) and EUV mask (LTEM) are used for this experiment; those are made and developed by in-house captive maskshop. Simulation and experiment with 1.35NA ArF immersion scanner and 0.25NA EUV full field scanner are performed to characterize EUV lithography and to compare process margin of each DRAM cell. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 24nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE and Solid-EUV are also used in order to study characteristics of EUV patterning through rigorous EMF simulation. We also investigated shadowing effect according to pattern shape and design rule respectively. We find that vertical to horizontal bias is around 2nm on 32nm to 40nm half pitch line and space pattern. In the case of DRAM cell, we also find same result with line and space pattern. In view of mask-making consideration, we optimize absorber etch process. So we acquire vertical absorber profile and mask MTT(Mean To Target) within 10% of target CD through several pitch. Process windows and mask error enhancement factors are measured with respect to several DRAM cell pattern. In the case of one dimensional line and space and two dimensional brick wall pattern, vertical pattern shows the best performance through various pitches because of lower shadowing effect than horizontal pattern. But in case of contact hole DRAM cell pattern such as storage node pattern, it has bigger MEF value than one or two dimensional pattern because of independency of shadowing effect. Finally, we compare with 2x, 3x and 4x DRAM cell patterning performance in terms of pattern fidelity, slit CD uniformity and shadowing effect.

Proceedings Article | 4 December 2008 Paper

Study on imaging characterization of ArF high index immersion lithography

Sarohan Park, Jun-Taek Park, Kilyoung Lee, Tae-Seung Eom, Jin-Soo Kim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 7140, 71401K (2008) https://doi.org/10.1117/12.804651

KEYWORDS: Photomasks, Optical lithography, Reflectivity, Immersion lithography, Lithography, Image processing, Image enhancement, Polarization, Semiconducting wafers, Transmittance

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Proceedings Article | 7 March 2008 Paper

The analysis of optical lithography at 2-dimensional dense structure

Chanha Park, Tae-Seung Eom, Hyejin Shin, Kiho Yang, Jinyoung Choi, Jinsoo Kim, Hyeongsoo Kim, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6924, 69244V (2008) https://doi.org/10.1117/12.772446

KEYWORDS: Transistors, Optical lithography, Photomasks, Lithography, Printing, 3D image processing, Binary data, Critical dimension metrology, Etching, Photoresist processing

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Proceedings Article | 7 March 2008 Paper

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Tae-Seung Eom, Jun-Taek Park, Jung-Hyun Kang, Sarohan Park, Sunyoung Koo, Jin-Soo Kim, Byoung-Hoon Lee, Chang-Moon Lim, HyeongSoo Kim, Seung-Chan Moon

Proceedings Volume 6924, 69240H (2008) https://doi.org/10.1117/12.772246

KEYWORDS: Photomasks, Chromium, Binary data, Polarization, Pellicles, Diffraction, Scanners, Phase shifts, Lithography, Immersion lithography

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In this paper, we will present comparison of attenuated phase shift mask and binary intensity mask at hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:Å ), thick Cr ( 1030Å ) BIM (Binary Intensity Mask), thin Cr ( 590Å ) BIM and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 38nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and first diffraction order are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, and then transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light. Process windows and mask error enhancement factors are measured with respect to various design rules, i.e., different k1 levels at fixed NA. In the case of one dimensional line and space pattern, thick Cr BIM shows the best performance through various pitches. But in case of two dimensional DRAM cell pattern, it is difficult to find out the advantage of BIM for sub-45nm. It needs further study for two dimensional patterns. Finally, it was observed that thick Cr binary intensity mask for sub-45nm has advantage for one dimensional line and space pattern.

Proceedings Article | 26 March 2007 Paper

Hyper NA polarized imaging of 45nm DRAM

Chang-Moon Lim, Sarohan Park, Yoon-Suk Hyun, Jin-Soo Kim, Tae-Seung Eom, Jun-Taek Park, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 6520, 65200B (2007) https://doi.org/10.1117/12.712442

KEYWORDS: Polarization, Optical lithography, Photomasks, Birefringence, Transmittance, Scanners, Lithography, Lithographic illumination, Immersion lithography, Critical dimension metrology

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Proceedings Article | 12 May 2005 Paper

Study on the shoreline for water immersion ArF lithography

Chang-Moon Lim, Tae-Seung Eom, Seo-Min Kim, Cheolkyu Bok, Won-Kwang Ma, Gyu-Dong Park, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600455

KEYWORDS: Lithography, Immersion lithography, Lithographic illumination, Semiconducting wafers, Diffraction, Critical dimension metrology, Reliability, Refractive index, Scanning electron microscopy, Contamination

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Proceedings Article | 4 May 2005 Paper

0.31k1 ArF lithography for 70-nm DRAM

Cheolkyu Bok, Ki-Lyoung Lee, Jun-Taek Park, Young-Sun Hwang, Tae-Seung Eom, Seo-Min Kim, Geunsu Lee, Jae-Chang Jung, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599348

KEYWORDS: Lithography, Photoresist processing, Photomasks, Optical proximity correction, Lithographic illumination, Resolution enhancement technologies, Electroluminescence, Image processing, Etching, Semiconducting wafers

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Proceedings Article | 4 May 2005 Paper

Origin of LER and its solution

Geunsu Lee, Tae-Seung Eom, Cheolkyu Bok, Changmoon Lim, Seung-Chan Moon, Jinwoong Kim

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599239

KEYWORDS: Line edge roughness, Photomasks, Line width roughness, Semiconducting wafers, Photoresist processing, Lithography, Photoresist developing, Resist chemistry, Scanning electron microscopy, Polymers

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Proceedings Article | 28 May 2004 Paper

Diffraction analysis of customized illumination technique

Chang-Moon Lim, Seo-Min Kim, Tae-Seung Eom, Seung Chan Moon, Ki Shin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536357

KEYWORDS: Diffraction, Lithographic illumination, Photomasks, Lithography, Image acquisition, Fourier transforms, Semiconducting wafers, Lead, Spectrum analysis, Mathematics

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Proceedings Article | 28 May 2004 Paper

Feasibility studies of ArF chromeless mask (CLM) for sub-80-nm era

Tae-Seung Eom, Chang-Moon Lim, Min Sung, Seung Chan Moon, Ki Shin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536346

KEYWORDS: Photomasks, Quartz, Lithography, Transmittance, Optical lithography, Image quality, Optical proximity correction, Etching, Lithographic illumination, Resolution enhancement technologies

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Proceedings Article | 26 June 2003 Paper

Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM

Tae-Seung Eom, Chang Lim, Seo-Min Kim, Hee-Bom Kim, Se-Young Oh, Won-Kwang Ma, Seung-Chan Moon, Ki Shin

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485452

KEYWORDS: Photomasks, Lithography, Transmittance, Phase shifts, Diffraction, Quartz, Mask making, Etching, Optical lithography, Critical dimension metrology

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Proceedings Article | 30 July 2002 Paper

Limitation of optical lithography for various resolution enhancement technologies

Tae-Seung Eom, Chang-Nam Ahn, Dong-Heok Park, Cha-Won Koh, Cheol-Kyu Bok

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474545

KEYWORDS: Lithographic illumination, Optical lithography, Diffusion, Lithography, Photomasks, Resolution enhancement technologies, Electroluminescence, Optical proximity correction, Critical dimension metrology, Image processing

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Proceedings Article | 24 July 2002 Paper

Contact hole resolution enhancement by post exposure amine treatment (CONPEAT) process

Cha-Won Koh, Jin-Soo Kim, Chang-Il choi, Tae-Seung Eom, Won-Taik Kwon, Jae Chang Jung, Cheol-Kyu Bok, Ki-Soo Shin

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474280

KEYWORDS: Photoresist processing, Critical dimension metrology, Semiconducting wafers, Chemically amplified resists, Resolution enhancement technologies, Optical lithography, Lithography, Image processing, Photomasks, Inspection

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Proceedings Article | 14 September 2001 Paper

Comparison study on mask error factor in 100-nm ArF and KrF lithography

Tae-Seung Eom, Yoon-Suk Hyun, Cheol-Kyun Kim, Cheol-Kyu Bok, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435787

KEYWORDS: Lithography, Lithographic illumination, Photomasks, Diffusion, Optical lithography, Critical dimension metrology, Semiconducting wafers, Scanners, Image processing, Lithium

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Proceedings Article | 22 January 2001 Paper

Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography

Sang-Sool Koo, Hee-Bom Kim, Hyoung-Soon Yune, Jee-Suk Hong, Seung-Weon Paek, Tae-Seung Eom, Chang-Nam Ahn, Young-Mog Ham, Ki-Ho Baik, Kyu-Yong Lee, Lee-Ju Kim, Hong-Seok Kim

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410711

KEYWORDS: Lithography, Photomasks, Critical dimension metrology, Phase shifts, Electroluminescence, Optical lithography, Chromium, Etching, Mask making, Scanning electron microscopy

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Proceedings Article | 19 July 2000 Paper

Mask critical dimension error on optical lithography

Tae-Seung Eom, Sang-Sool Koo, Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392047

KEYWORDS: Photomasks, Optical lithography, Diffusion, Critical dimension metrology, Lithography, Transmittance, Semiconducting wafers, Lithographic illumination, Phase shifts, Image processing

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Proceedings Article | 30 December 1999 Paper

Comparison study of mask error effects for various mask-making processes

Tae-Seung Eom, Ikboum Hur, Youngmo Koo, Ki-Ho Baik, Il-Hyun Choi, Do Yun Kim, Chul Shin

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373369

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Mask making, Dry etching, Head, Electroluminescence, Error analysis, Etching, Control systems

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Showing 5 of 21 publications

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