We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG
demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk
silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz
bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the
AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11
~ -12.2 dBm sensitivity at a BER = 10-12.
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