Mr. Takaharu Nagai Profile

Takaharu Nagai

at Dai Nippon Printing Co Ltd

SPIE Involvement:

Author

Publications (18)

Proceedings Article | 10 April 2024 Presentation

Development of nanoimprint templates by multiple patterning technology and its application

Takaharu Nagai, Hisayoshi Watanabe, Hideki Cho

Proceedings Volume PC12956, PC129560A (2024) https://doi.org/10.1117/12.3010084

KEYWORDS: Nanoimprint lithography, Electron beam lithography, Lithography, Fabrication, Semiconductors, Scattering, Power consumption, Overlay metrology, Optical lithography, Multilayers

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Proceedings Article | 29 September 2023 Paper

Development of nanoimprint templates for dual damascene processing

Hisayoshi Watanabe, Takaharu Nagai, Koji Ichimura

Proceedings Volume 12915, 1291504 (2023) https://doi.org/10.1117/12.2684687

KEYWORDS: Nanoimprint lithography, Scanning electron microscopy, Overlay metrology, Fabrication, Lithography, Electron beam lithography, Design and modelling, 3D acquisition, Semiconductors

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Proceedings Article | 30 April 2023 Presentation

Development of nanoimprint templates for dual damascene processing

Hisayoshi Watanabe, Koji Ichimura, Takaharu Nagai

Proceedings Volume PC12497, PC1249708 (2023) https://doi.org/10.1117/12.2661643

KEYWORDS: Nanoimprint lithography, Lithography, Metals, Semiconductors, Extreme ultraviolet lithography, Extreme ultraviolet, Double patterning technology, 3D acquisition

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Proceedings Article | 22 February 2021 Presentation

Nanoimprint template development by new fabrication method and its application

Koji Ichimura, Takaharu Nagai, Hisayoshi Watanabe, Naoya Hayashi, Kouji Yoshida

Proceedings Volume 11610, 116100B (2021) https://doi.org/10.1117/12.2584791

KEYWORDS: Nanoimprint lithography, Lithography, Double patterning technology, Photomasks, Overlay metrology, Fabrication, Ultraviolet radiation, Semiconductors, Semiconducting wafers, Polymers

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SPIE Journal Paper | 5 February 2016

Development of nanoimprint lithography templates toward high-volume manufacturing

Koji Ichimura, Kouji Yoshida, Saburo Harada, Takaharu Nagai, Masaaki Kurihara, Naoya Hayashi

JM3, Vol. 15, Issue 02, 021006, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021006

KEYWORDS: Nanoimprint lithography, High volume manufacturing, Image processing, Critical dimension metrology, Lithography, Semiconductors, Semiconducting wafers, Photomasks, Ultraviolet radiation, Liquids

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Proceedings Article | 19 March 2015 Paper

HVM readiness of nanoimprint lithography templates: defects, CD, and overlay

Koji Ichimura, Kouji Yoshida, Saburo Harada, Takaharu Nagai, Masaaki Kurihara, Naoya Hayashi

Proceedings Volume 9423, 94230D (2015) https://doi.org/10.1117/12.2175483

KEYWORDS: Nanoimprint lithography, Distortion, Image processing, Semiconducting wafers, Overlay metrology, Lithography, Etching, High volume manufacturing, Semiconductors, Photomasks

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Proceedings Article | 14 October 2011 Paper

Effects of cleaning on NIL templates: surface roughness, CD, and pattern integrity

Naoya Hayashi, Peter Dress, Uwe Dietze, Kenji Onuki, Tatsuya Tomita, Naoshi Kawamata, Sherjang Singh, Masaaki Kurihara, Takaharu Nagai

Proceedings Volume 8166, 81662P (2011) https://doi.org/10.1117/12.898649

KEYWORDS: Nanoimprint lithography, Particles, Surface roughness, Critical dimension metrology, Quartz, Photoresist processing, Binary data, Chromium, Silica, Inspection

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Proceedings Article | 11 May 2009 Paper

Adhesion control between resist patterns and photomask blank surfaces

Naoya Hayashi, Morihisa Hoga, Masamichi Fujihira, Yasutaka Morikawa, Hiroyuki Ohtani, Masaaki Kurihara, Hiroshi Mohri, Kouji Yoshida, Sho Hatakeyama, Masaharu Fukuda, Daisuke Totsukawa, Takaharu Nagai

Proceedings Volume 7379, 73790A (2009) https://doi.org/10.1117/12.824251

KEYWORDS: Chromium, Photomasks, Quartz, Surface roughness, Head-mounted displays, Scanning probe microscopy, Photoresist processing, Interfaces, Atomic force microscopy, Silicon

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Proceedings Article | 19 May 2008 Paper

Mask CD compensation method using diffraction intensity for lithography equivalent metrology

Hiroshi Mohri, Naoya Hayashi, Takanori Sutou, Nobuhito Toyama, Takaharu Nagai, Yuichi Inazuki, Hiroyuki Hashimoto, Yasutaka Morikawa

Proceedings Volume 7028, 70281M (2008) https://doi.org/10.1117/12.793063

KEYWORDS: Diffraction, Photomasks, 3D modeling, 3D metrology, Printing, 3D printing, Binary data, Polarization, Lithography, Critical dimension metrology

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Proceedings Article | 2 May 2008 Paper

Mask CD measurement approach by diffraction intensity for lithography equivalent

Nobuhito Toyama, Hiroshi Mohri, Hiroyuki Hashimoto, Naoya Hayashi, Yasutaka Morikawa, Yuichi Inazuki, Kei Mesuda, Toshifumi Yokoyama, Takaharu Nagai, Takanori Sutou

Proceedings Volume 6792, 67920N (2008) https://doi.org/10.1117/12.798781

KEYWORDS: Photomasks, 3D modeling, Diffraction, 3D metrology, Lithography, Scanning electron microscopy, Critical dimension metrology, Printing, 3D printing, Image analysis

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Proceedings Article | 19 March 2008 Paper

Decomposition difficulty analysis for double patterning and the impact on photomask manufacturability

Martin Drapeau, Naoya Hayashi, Chris Cork, Yuichi Inazuki, Yasutaka Morikawa, Takaharu Nagai, Kevin Lucas, Takanori Sutou, Nobuhito Toyama, Hiroshi Mohri

Proceedings Volume 6925, 69251O (2008) https://doi.org/10.1117/12.773291

KEYWORDS: Inspection, Photomasks, Double patterning technology, Optical proximity correction, Lithography, Printing, Lithographic illumination, Binary data, Critical dimension metrology, Logic

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Proceedings Article | 30 October 2007 Paper

Estimating DPL photomask fabrication load compared with single exposure

Yoshikuni Abe, Judy Huckabay, Nobuhito Toyama, Naoya Hayashi, Hiroshi Mohri, Takaharu Nagai, Yasutaka Morikawa, Yuichi Inazuki, Takanori Sutou

Proceedings Volume 6730, 67301J (2007) https://doi.org/10.1117/12.746982

KEYWORDS: Photomasks, Optical proximity correction, Inspection, Design for manufacturing, Lithography, Double patterning technology, Electronic design automation, Vestigial sideband modulation, Beam shaping, Printing

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Proceedings Article | 30 October 2007 Paper

DPL performance analysis strategy with conventional workflow

Naoya Hayashi, Nandasiri Samarakone, Yasutaka Morikawa, Hiroshi Mohri, Takanori Sutou, Alek Chen, Takaharu Nagai, Junji Miyazaki, Yuichi Inazuki, Nobuhito Toyama

Proceedings Volume 6730, 67301I (2007) https://doi.org/10.1117/12.747380

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Critical dimension metrology, Lithography, Optical proximity correction, Scanning electron microscopy, Double patterning technology, Error analysis, Bridges

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Proceedings Article | 15 May 2007 Paper

Approach to analyze decomposition impact for photomask fabrication

Yasutaka Morikawa, Takanori Sutou, Takaharu Nagai, Naoya Hayashi, Nobuhito Toyama, Hiroshi Mohri, Takashi Adachi, Yuichi Inazuki

Proceedings Volume 6607, 660733 (2007) https://doi.org/10.1117/12.729022

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Optical proximity correction, Double patterning technology, Mask making, Image registration, Overlay metrology, Device simulation, Statistical modeling

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Proceedings Article | 15 May 2007 Paper

Extendibility of single mask exposure for practical ArF immersion lithography

Takashi Adachi, Takanori Sutou, Hiroshi Mohri, Yasutaka Morikawa, Takaharu Nagai, Yuichi Inazuki, Naoya Hayashi, Nobuhito Toyama

Proceedings Volume 6607, 660735 (2007) https://doi.org/10.1117/12.729024

KEYWORDS: Photomasks, SRAF, Lithography, Water, Lithographic illumination, Printing, Refractive index, Immersion lithography, Optical proximity correction, Quartz

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Proceedings Article | 3 May 2007 Paper

Characteristics optimization of mask materials for Hyper-NA lithography

Takashi Adachi, Nobuhito Toyama, Toshifumi Yokoyama, Hiroshi Mohri, Yasuhisa Kitahata, Takaharu Nagai, Yasutaka Morikawa, Naoya Hayashi, Takanori Suto, Yuichi Inazuki

Proceedings Volume 6533, 653306 (2007) https://doi.org/10.1117/12.734498

KEYWORDS: Photomasks, Birefringence, Semiconducting wafers, Pellicles, Lithography, Lithographic illumination, Quartz, Polarization, Printing, Wafer-level optics

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Proceedings Article | 27 March 2007 Paper

Analysis of diffraction orders including mask topography effects for OPC optimization

Takaharu Nagai, Takanori Suto, Hiroshi Mohri, Nobuhito Toyama, Takashi Adachi, Yasutaka Morikawa, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 6520, 65204S (2007) https://doi.org/10.1117/12.711757

KEYWORDS: Diffraction, Optical proximity correction, Photomasks, 3D modeling, Systems modeling, Semiconducting wafers, Cadmium, Optical simulations, Finite-difference time-domain method, Model-based design

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Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Ulrich Stroessner, Takanori Sutou, Kei Mesuda, Nobuhito Toyama, Naoya Hayashi, Rigo Richter, Takashi Adachi, Takaharu Nagai, Yuichi Inazuki, Thomas Scheruebl, Robert Birkner, Yasutaka Morikawa, Hiroshi Mohri

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

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Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Showing 5 of 18 publications

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