Mr. Takashi Adachi Profile

Takashi Adachi

at Dai Nippon Printing Co Ltd

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 10 May 2016 Paper

Lithographic performance of a new “low-k” mask

Takashi Adachi, Ayako Tani, Yukihiro Fujimura, Katsuya Hayano, Yasutaka Morikawa, Hiroyuki Miyashita, Yukio Inazuki, Yoshio Kawai

Proceedings Volume 9984, 998404 (2016) https://doi.org/10.1117/12.2242870

KEYWORDS: Lithography, Photomasks, Double patterning technology, Semiconducting wafers, Metals, Phase shifts, Optical proximity correction, Silicon, Excimer lasers, Transmittance

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Proceedings Article | 9 July 2015 Paper

Development of new high transmission eaPSM for Negative Tone Development process on wafer

Takashi Adachi, Ayako Tani, Yukihiro Fujimura, Shingo Yoshikawa, Katsuya Hayano, Yasutaka Morikawa, Yoichi Miura, Hiroyuki Miyashita

Proceedings Volume 9658, 96580P (2015) https://doi.org/10.1117/12.2197611

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Inspection, Transmittance, Excimer lasers, Electroluminescence, Phase shifts, Image processing, Opacity

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Proceedings Article | 28 July 2014 Paper

Study of the mask materials for PTD process and NTD process in practical ArF immersion lithography

Takashi Adachi, Ayako Tani, Katsuya Hayano, Hideyoshi Takamizawa

Proceedings Volume 9256, 92560B (2014) https://doi.org/10.1117/12.2070056

KEYWORDS: Optical proximity correction, Photomasks, Nanoimprint lithography, Lithography, Image processing, Finite-difference time-domain method, Image enhancement, Metals, Photoresist processing, Immersion lithography

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Proceedings Article | 11 May 2009 Paper

Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side

Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7379, 73792I (2009) https://doi.org/10.1117/12.824332

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Coating, Extreme ultraviolet lithography, Mask making, Conductive coatings, Critical dimension metrology, Photoresist processing, Ions

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Proceedings Article | 19 May 2008 Paper

EUV mask process development status for full field EUV exposure tool

Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Hiroshi Mohri, Naoya Hayashi, Kosuke Ishikiriyama

Proceedings Volume 7028, 70281Q (2008) https://doi.org/10.1117/12.793068

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Reflectivity, Extreme ultraviolet lithography, Ruthenium, Optical lithography, Photoresist processing, Dry etching, Inspection

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Proceedings Article | 30 October 2007 Paper

Development of EUV mask fabrication process using Ru capping blank

Tsukasa Abe, Takashi Adachi, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Kosuke Ishikiriyama

Proceedings Volume 6730, 67305N (2007) https://doi.org/10.1117/12.747722

KEYWORDS: Extreme ultraviolet, Etching, Ruthenium, Reflectivity, Photomasks, Mask making, Inspection, Optical lithography, Line edge roughness, Scanning electron microscopy

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Proceedings Article | 15 May 2007 Paper

Approach to analyze decomposition impact for photomask fabrication

Nobuhito Toyama, Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6607, 660733 (2007) https://doi.org/10.1117/12.729022

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Optical proximity correction, Double patterning technology, Mask making, Image registration, Overlay metrology, Device simulation, Statistical modeling

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Proceedings Article | 15 May 2007 Paper

Extendibility of single mask exposure for practical ArF immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Takaharu Nagai, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6607, 660735 (2007) https://doi.org/10.1117/12.729024

KEYWORDS: Photomasks, SRAF, Lithography, Water, Lithographic illumination, Printing, Refractive index, Immersion lithography, Optical proximity correction, Quartz

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Proceedings Article | 3 May 2007 Paper

Characteristics optimization of mask materials for Hyper-NA lithography

Yasutaka Morikawa, Takanori Suto, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Yasuhisa Kitahata, Toshifumi Yokoyama, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6533, 653306 (2007) https://doi.org/10.1117/12.734498

KEYWORDS: Photomasks, Birefringence, Semiconducting wafers, Pellicles, Lithography, Lithographic illumination, Quartz, Polarization, Printing, Wafer-level optics

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Proceedings Article | 27 March 2007 Paper

Pupil plane analysis on AIMS 45-193i for advanced photomasks

Yasutaka Morikawa, Takanori Sutou, Kei Mesuda, Takaharu Nagai, Yuichi Inazuki, Takashi Adachi, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi, Ulrich Stroessner, Robert Birkner, Rigo Richter, Thomas Scheruebl

Proceedings Volume 6520, 65201H (2007) https://doi.org/10.1117/12.711664

KEYWORDS: Photomasks, Pellicles, Diffraction, Semiconducting wafers, Printing, Wafer-level optics, 3D metrology, Polarization, Data modeling, Binary data

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Hyper-NA lithography with polarized light illumination is introduced as the solution of 45nm or 32nm node technology. In that case, consideration of new characteristics of mask materials and pellicle films has been required. In order to analyze the influence of mask material's optical characteristics, we have proposed to use the AIMS^TM system measuring diffraction intensity balance in previous work. That was enabled by acquiring pupil plane images using the Bertrand lens in the AIMS^TM system to measure selected area's diffracted light. In this study of mask material evaluation, we used same functionality of AIMS^TM system, MonoPole illumination and Bertrand lens, as previous work but other direction's pole is also used on the illumination aperture to cover total diffraction orders of Cross-quad illumination because this illumination is more flexible for x and y patterns. In order to get diffracted light of 45nm half-pitch, hyper-NA e.g. NA=1.35 was applied and the AIMS^TM 45-193i Alpha system was used for this evaluation. The examinations were performed with binary and half tone PSM with half pitch 40 to 150nm on a 1x scale and fixed half pitch 45nm with various mask bias. We confirmed the relation between diffractions' intensity balance and wafer printing performance for each material and we compared them to 3D simulation results. Moreover, by using the same functionality of AIMS^TM system, the transmission change by pellicle film was also examined. We have prepared two different thickness pellicles to compare transmission change and printed CD on the wafer. Intensity profile at pupil plane on the clear region of the mask was acquired with Bertrand lens and conventional large sigma setting for both with and without pellicle film on the mask. By comparing transmission distribution change between with and without pellicle, we could calculate transmission loss by pellicle at large incident angles. For this experiment, NA=1.40 was applied and the AIMS^TM 45-193i Alpha system was also used. The examinations were performed with half tone PSM at half pitch 45nm and 65nm on a 1x scale on linear polarized DiPole illumination. As a result, we have confirmed good agreement between AIMS^TM measurement data and optical 3D simulations. In conclusion, the AIMS^TMsystem is a valuable tool for analyzing diffraction efficiency or intensity distribution on the pupil plane and comparison to wafer printing performance.

Proceedings Article | 27 March 2007 Paper

Analysis of diffraction orders including mask topography effects for OPC optimization

Yuichi Inazuki, Nobuhito Toyama, Takashi Adachi, Takaharu Nagai, Takanori Suto, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6520, 65204S (2007) https://doi.org/10.1117/12.711757

KEYWORDS: Diffraction, Optical proximity correction, Photomasks, 3D modeling, Systems modeling, Semiconducting wafers, Cadmium, Optical simulations, Finite-difference time-domain method, Model-based design

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Proceedings Article | 21 March 2007 Paper

Pattern decomposition for double patterning from photomask viewpoint

Nobuhito Toyama, Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6521, 65210V (2007) https://doi.org/10.1117/12.711915

KEYWORDS: Photomasks, Double patterning technology, Semiconducting wafers, Lithography, Optical proximity correction, Statistical modeling, Chemical elements, Logic, Overlay metrology, Phase shifts

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Proceedings Article | 20 October 2006 Paper

45-32-nm node photomask technology with water immersion lithography

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6349, 63493J (2006) https://doi.org/10.1117/12.689740

KEYWORDS: Lithography, Photomasks, SRAF, Lithographic illumination, Resolution enhancement technologies, Optical proximity correction, Printing, Double patterning technology, Immersion lithography, Semiconducting wafers

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Proceedings Article | 20 May 2006 Paper

In-field CD uniformity control by altering transmission distribution of the photomask using ultra-fast pulsed laser technology

Yasutaka Morikawa, Takanori Sutou, Yuichi Inazuki, Takashi Adachi, Yuuichi Yoshida, Kouichirou Kojima, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Vladimir Dmitriev, Sergey Oshemkov, Eitan Zait, Guy Ben-Zvi

Proceedings Volume 6283, 62831Y (2006) https://doi.org/10.1117/12.681762

KEYWORDS: Semiconducting wafers, Photomasks, Signal attenuation, Critical dimension metrology, Binary data, Ultrafast phenomena, Laser applications, Laser scattering, Quartz, Scattering

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Proceedings Article | 20 May 2006 Paper

Lithographic performance comparison with various RET for 45-nm node with hyper NA

Takashi Adachi, Yuichi Inazuki, Takanori Sutou, Yasuhisa Kitahata, Yasutaka Morikawa, Nobuhito Toyama, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 6283, 62832W (2006) https://doi.org/10.1117/12.681813

KEYWORDS: Photomasks, Resolution enhancement technologies, Optical proximity correction, Etching, Lithography, Quartz, Printing, SRAF, Electroluminescence, Lithographic illumination

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Proceedings Article | 8 November 2005 Paper

Optimization of Alt-PSM structure for 45nm node ArF immersion lithography

Takashi Adachi, Kei Mesuda, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 5992, 599238 (2005) https://doi.org/10.1117/12.633307

KEYWORDS: Quartz, Photomasks, Nanoimprint lithography, Optical proximity correction, Printing, Lithography, Immersion lithography, Semiconducting wafers, Image quality, Phase shifting

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Proceedings Article | 28 August 2003 Paper

PSM quartz etch depth evaluation with an atomic force microscope

Kenji Noguchi, Shiho Sasaki, Yuuichi Yoshida, Takashi Adachi, Tsukasa Abe, Hiroshi Mohri, Haruo Kokubo, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504065

KEYWORDS: Etching, Photomasks, Dry etching, Atomic force microscopy, Phase shifts, Atomic force microscope, Printing, Quartz, Semiconducting wafers, Chromium

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Showing 5 of 17 publications

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