Mr. Takashi Maruyama Profile

Takashi Maruyama

Group Manager at e-Shuttle Inc

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Publications (8)

Proceedings Article | 26 March 2013 Paper

Practical proof of CP element based design for 14nm node and beyond

Takashi Maruyama, Hiroshi Takita, Rimon Ikeno, Morimi Osawa, Yoshinori Kojima, Shinji Sugatani, Hiromi Hoshino, Toshio Hino, Masaru Ito, Tetsuya Iizuka, Satoshi Komatsu, Makoto Ikeda, Kunihiro Asada

Proceedings Volume 8680, 868027 (2013) https://doi.org/10.1117/12.2011678

KEYWORDS: Logic, Analog electronics, Semiconducting wafers, Mirrors, Metals, High volume manufacturing, Logic devices, System on a chip, Electron beam direct write lithography, Lithium

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To realize HVM (High Volume Manufacturing) with CP (Character Projection) based EBDW, the shot count reduction is the essential key. All device circuits should be composed with predefined character parts and we call this methodology “CP element based design”. In our previous work, we presented following three concepts [2]. 1) Memory: We reported the prospects of affordability for the CP-stencil resource. 2) Logic cell: We adopted a multi-cell clustering approach in the physical synthesis. 3) Random interconnect: We proposed an ultra-regular layout scheme using fixed size wiring tiles containing repeated tracks and cutting points at the tile edges. In this paper, we will report the experimental proofs in these methodologies. In full chip layout, CP stencil resource management is critical key. From the MCC-POC (Proof of Concept) result [1], we assumed total available CP stencil resource as 9000um². We should manage to layout all circuit macros within this restriction. Especially the issues in assignment of CP-stencil resource for the memory macros are the most important as they consume considerable degree of resource because of the various line-ups such as 1RW-, 2RW-SRAMs, Resister Files and ROM which require several varieties of large size peripheral circuits. Furthermore the memory macros typically take large area of more than 40% of die area in the forefront logic LSI products so that the shot count increase impact is serious. To realize CP-stencil resource saving we had constructed automatic CP analyzing system. We developed two types of extraction mode of simple division by block and layout repeatability recognition. By properly controlling these models based upon each peripheral circuit characteristics, we could minimize the consumption of CP stencil resources. The estimation for 14nm technology node had been performed based on the analysis of practical memory compiler. The required resource for memory macro is proved to be affordable value which is 60% of full CP stencil resource and wafer level converted shot count is proved to be the level which meets 100WPH throughput. In logic cell design, circuit performance verification result after the cell clustering has been estimated. The cell clustering by the acknowledgment of physical distance proved to owe large penalty mainly in the wiring length. To reduce this design penalty, we proposed CP cell clustering by the acknowledgment of logical distance. For shot-count reduction of random interconnect area design, we proposed a more structural routing architecture which consists of the track exchange and the via position arrangement. Putting these design approaches together, we can design CP stencils to hit the target throughput within the area constraint. From the analysis for other macros such as analog, I/O, and DUMMY, it has proved that we don’t need special CP design approach than legacy pattern matching CP extraction. From all these experimental results we get good prospects to the reality of full CP element based layout.

Proceedings Article | 21 March 2012 Paper

Optimization of chemically amplified resist for high-volume manufacturing by electron-beam direct writing toward 14nm node and beyond

Jun-ichi Kon, Takashi Maruyama, Yoshinori Kojima, Yasushi Takahashi, Shinji Sugatani, Kozo Ogino, Hiromi Hoshino, Hideaki Isobe, Masaki Kurokawa, Akio Yamada

Proceedings Volume 8323, 832324 (2012) https://doi.org/10.1117/12.916305

KEYWORDS: Diffusion, Chemically amplified resists, Lithography, Manufacturing, Optical lithography, Photoresist processing, Scanning electron microscopy, Monte Carlo methods, High volume manufacturing, Beam analyzers

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Proceedings Article | 21 March 2012 Paper

Feasibility study of character projection-based electron-beam direct writing for logic LSI wiring including automatically routed area with 14nm node technology case

Shinji Sugatani, Takashi Maruyama, Yoshinori Kojima, Yasushi Takahashi, Masaki Takakuwa, Shuzo Ohshio, Masaru Ito

Proceedings Volume 8323, 832329 (2012) https://doi.org/10.1117/12.916358

KEYWORDS: Electron beam direct write lithography, Metals, Double patterning technology, Logic, Lithography, Manufacturing, Etching, Tolerancing, Vestigial sideband modulation, Scanning electron microscopy

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Proceedings Article | 21 March 2012 Paper

Proximity effect correction using multilevel area density maps for character projection based electron beam direct writing toward 14 nm node and beyond

Kozo Ogino, Hiromi Hoshino, Takashi Maruyama, Yasuhide Machida, Shinji Sugatani

Proceedings Volume 8323, 832328 (2012) https://doi.org/10.1117/12.916353

KEYWORDS: Scattering, Backscatter, Laser scattering, Critical dimension metrology, Electron beams, Modulation, Photomasks, Logic, Electron beam direct write lithography, Lithography

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Proceedings Article | 21 March 2012 Paper

CP element based design for 14nm node EBDW high volume manufacturing

Takashi Maruyama, Yasuhide Machida, Shinji Sugatani, Hiroshi Takita, Hiromi Hoshino, Toshio Hino, Masaru Ito, Akio Yamada, Tetsuya Iizuka, Satoshi Komatsu, Makoto Ikeda, Kunihiro Asada

Proceedings Volume 8323, 832314 (2012) https://doi.org/10.1117/12.916315

KEYWORDS: Logic, Multiplexers, Electron beam direct write lithography, High volume manufacturing, Semiconducting wafers, Semiconductors, Analog electronics, Chemical elements, Logic devices, Information fusion

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Proceedings Article | 3 April 2010 Paper

CP based EBDW throughput enhancement for 22nm high volume manufacturing

Takashi Maruyama, Y. Machida, S. Sugatani

Proceedings Volume 7637, 76371S (2010) https://doi.org/10.1117/12.846492

KEYWORDS: Electron beam direct write lithography, High volume manufacturing, Logic, Extreme ultraviolet, Vestigial sideband modulation, Semiconducting wafers, Photomasks, Lithography, Analog electronics, Information operations

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Proceedings Article | 20 March 2008 Paper

EBDW technology for EB shuttle at 65nm node and beyond

T. Maruyama, M. Takakuwa, Y. Kojima, Y. Takahashi, K. Yamada, J. Kon, M. Miyajima, A. Shimizu, Y. Machida, H. Hoshino, H. Takita, S. Sugatani, H. Tsuchikawa

Proceedings Volume 6921, 69210H (2008) https://doi.org/10.1117/12.772469

KEYWORDS: Photomasks, Critical dimension metrology, Vestigial sideband modulation, Electron beam direct write lithography, Copper, Etching, Manufacturing, Semiconducting wafers, Prototyping, Calibration

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Proceedings Article | 20 March 2008 Paper

Applying photolithography-friendly design to e-beam direct writing in 65-nm node and beyond

Hiromi Hoshino, Kozo Ogino, Yasuhide Machida, Masaaki Miyajima, Takashi Maruyama, Yoshinori Kojima, Shinji Sugatani

Proceedings Volume 6921, 69212K (2008) https://doi.org/10.1117/12.773189

KEYWORDS: Electron beam lithography, Optical lithography, Lithography, Semiconducting wafers, Photomasks, Scanning electron microscopy, Scattering, Data conversion, Maskless lithography, Semiconductors

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Showing 5 of 8 publications

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