Gigaphoton Inc. has been developing a CO<sub>2</sub>-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Original technologies and key components of this source include a high-power carbon dioxide (CO<sub>2</sub>) laser with 15 ns pulse duration, a short wavelength solid-state pre-pulse laser with 10 ps pulse duration, a highly stabilized small droplet (DL) target, a precise DL-laser shooting control system and unique debris mitigation technology with a magnetic field. In this paper, an update of the development progress of the total system and of the key components is presented.
Gigaphoton Inc. is developing a CO<sub>2</sub>-Sn-LPP EUV light source based on unique and original technologies including a high power CO<sub>2</sub>laser with 15 nanosecond pulse duration, a solid-state pre-pulse laser with 10 picosecond pulse duration, a highly stabilized droplet generator, a precise laser-droplet shooting control system and a debris mitigation system using a magnetic field. In this paper, an update of the development progress of our 250W CO<sub>2</sub>-Sn-LPP EUV light source and of the key components is presented.