Dr. Takeshi Ohshima Profile

Dr. Takeshi Ohshima

Project Leader at National Institutes for Quantum Science and Technology

SPIE Involvement:

Author

Proceedings Article | 18 April 2021 Presentation

Prospect of laser-driven particle beams for material science and space applications

Takeshi Ohshima, Mitsuru Imaizumi

Proceedings Volume 11790, 117900G (2021) https://doi.org/10.1117/12.2596512

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Spacecraft are subject to harsh environments and their radiation resistance is one of the most important issues [1]. Therefore, radiation response of any components for use in space should be evaluated before their launch to predict their reliability and lifetime in space. For solar cells, electron and proton irradiation experiments are usually carried out to clarify their radiation degradation [2]. Although electrons/protons have energy spectra in space, electron/proton irradiation with mono-energy is used for ground testing due to the limitation of the capability of currently existing standard particle accelerators. Then relative damage coefficients (RDCs), which is a kind of conversion factors to understand degradation values to the standard electron/proton energy (1 MeV for electrons and 10 MeV for electrons), are estimated. Recently, multi-junction solar cells consisting of multilayer of sub-cells, such as InGaP/GaAs/Ge solar cells, are installed onto spacecraft. RDCs for multi-junction solar cells is not monotonic behaviors since their degradation strongly depends on the penetration depth of electrons/protons. Thus, they show large RDCs values when the penetration depth is close to pn junction for each sub cell. This indicates that it is necessary to make irradiation testing with many energies to clarify their degradation in space. If we can use electron/proton beams with energy spectra similar to space environment, the time and cost for the ground testing can reduce as well as radiation degradation of multi-junction solar cells can be predicted with high accuracy. We are expecting laser-driven particle acceleration technology to realized particle beams with energy spectra similar to space environments. Particle irradiation is a popular methodology for the functionalization of materials. For example, nitrogen-vacancy (NV) center in diamond is known as a spin defect which can be applied to the quantum technology, e.g. quantum bit (qubit) and quantum sensor. To create NV centers, we need to introduce vacancies and/or N atoms. Particle irradiation (N ion implantation) is a key technology [3]. For quantum sensing, the sensitivity improves with increasing amounts of NV centers. Thus, for realizing quantum sensing with high sensitivity, it is necessary to create the certain thickness of a NV center layer. Since particle (N ion) beams with energy spectra can introduce damage (N atoms) in diamond by one experiment, laser-driven particle beam acceleration technology is also useful from the point of view of material functionalization. [1] C. Morioka, et al., First flight demonstration of film-laminated InGaP/GaAs and CIGS thin-film solar cells by JAXA’s small satellite in LEO, Prog. Photovolt: Res. Appl., 19 (2011) 825. [2] M. Imaizumi, et al., Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons, Prog. Photovolt: Res. Appl., 25 (2017) 161. [3] Y. Yamazaki, et al., Chapter 4 “Color Centers in Wide-Gap Semiconductors for Quantum Technology” of Defect in Functional Materials, Edited by F. C-C Ling et al., World Scientific Publishing Co.Pte. Ltd (2020) 93.

Proceedings Article | 30 December 2019 Paper

The effect of nitrogen concentration on quantum sensing with nitrogen-vacancy centres

Marco Capelli, Hiroshi Abe, Takeshi Ohshima, Brett Johnson, David Simpson, Jan Jeske, Andrew Greentree, Philipp Reineck, Brant Gibson

Proceedings Volume 11202, 112021O (2019) https://doi.org/10.1117/12.2541225

KEYWORDS: Nitrogen, Diamond, Luminescence, Magnetism, Quantum physics, Physics, Solid state physics, Crystals

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Proceedings Article | 23 February 2018 Paper

Latest progress in gallium-oxide electronic devices

Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Yoshiaki Nakata, Chia-Hung Lin, Takafumi Kamimura, Lingaparthi Ravikiran, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai

Proceedings Volume 10533, 105330O (2018) https://doi.org/10.1117/12.2292666

KEYWORDS: Gallium, Field effect transistors, Transistors, Diodes, Silicon, Gamma radiation, Electronic components, Oxides, Silicon carbide, Gallium nitride

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Proceedings Article | 22 September 2015 Paper

X-ray characterization of short-pulse laser illuminated hydrogen storage alloys having very high performance

Hiroyuki Daido, Hiroshi Abe, Takahisa Shobu, Takuya Shimomura, Shinnosuke Tokuhira, Yusuke Takenaka, Takehiro Furuyama, Akihiko Nishimura, Hirohisa Uchida, Takeshi Ohshima

Proceedings Volume 9589, 95890K (2015) https://doi.org/10.1117/12.2186898

KEYWORDS: Hydrogen, Absorption, Ions, Pulsed laser operation, Solids, X-ray diffraction, Chemical species, X-ray characterization, Laser applications, Particle beams

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Proceedings Article | 5 June 2014 Paper

Development of irradiation methods and degradation modeling for state-of-the-art space solar cells

Takeshi Ohshima, Shin-ichiro Sato, Taishi Sumita, Tetsuya Nakamura, Mitsuru Imaizumi

Proceedings Volume 9115, 911503 (2014) https://doi.org/10.1117/12.2052810

KEYWORDS: Solar cells, Solar radiation, Solar energy, Silicon, Solar radiation models, Indium gallium phosphide, Gallium arsenide, Thin film solar cells, Thin films, Multijunction solar cells

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Proceedings Article | 29 May 2013 Paper

Radiation effects in solar cells

Mitsuru Imaizumi, Takeshi Ohshima

Proceedings Volume 8725, 872515 (2013) https://doi.org/10.1117/12.2015362

KEYWORDS: Solar cells, Gallium arsenide, Indium gallium phosphide, Silicon, Solar radiation, Resistance, Germanium, External quantum efficiency, Electrons, Particles

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