Novolak resists which are implanted with B, P, and As ions, respectively, were irradiated with a
pulsed 532nm laser. Regardless of the implanted ion species and density, more than 74 % of the laser
power was found to absorb into the Si wafer surface. For the laser irradiation of 1 pulse, the ion-implanted
resist with a density of 5.0x10<sup>13</sup> atoms/cm<sup>2</sup> was completely stripped in the same way as that of a non-implanted resist. The optical absorption of the resist surface increased as the density of the ion-implantation
increased. In case of the ion-implanted resist with a density of 5.0x1015 atoms/cm<sup>2</sup>, the resist
was stripped by 20 pulses irradiation without occurring laser-induced surface damage. A scanning removal
of the highly ion-implanted resist was also successfully stripped by using an optimized irradiation
condition. A highly ion-implanted resist was continuously stripped by the scanning laser irradiation with 20 pulses.