Dr. Tania M. Paskova Profile

Dr. Tania M. Paskova

Research Professor at North Carolina State Univ

SPIE Involvement:

Author

Area of Expertise:

III-V semiconductors , optical propeties of nitrides , nanotechnology , structural properties of highly mismatched systems , microstructure , cystal growth

Websites:

Company Website | Personal Website

Proceedings Article | 23 February 2018 Paper

Thermal conductivity of bulk and thin film [beta]-Ga2O3 measured by the 3[omega] technique

N. Blumenschein, M. Slomski, P. Paskov, F. Kaess, M. Breckenridge, J. Muth, T. Paskova

Proceedings Volume 10533, 105332G (2018) https://doi.org/10.1117/12.2288267

KEYWORDS: Thin films, Gallium, Tin, Crystals, Transmission electron microscopy, Doping, Sapphire, Oxides

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Proceedings Article | 27 March 2013 Paper

Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations

O. Romanyuk, P. Jiříček, P. Mutombo, T. Paskova, I. Bartoš

Proceedings Volume 8625, 86252I (2013) https://doi.org/10.1117/12.2006400

KEYWORDS: Gallium nitride, Diffraction, Crystals, Chemical species, Gallium, Annealing, Scattering, Light emitting diodes, Solids, Polishing

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Proceedings Article | 4 March 2013 Paper

Recombination dynamics in non-polar m-plane GaN investigated by time- and polarization-resolved photoluminescence

Serdal Okur, Kestutis Jarašiūnas, Shopan din Ahmad Hafiz, Jacob Leach, Tania Paskova, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 8625, 86252D (2013) https://doi.org/10.1117/12.2005252

KEYWORDS: Excitons, Polarization, Gallium nitride, Luminescence, Temperature metrology, Spectroscopy, Dual energy x-ray absorptiometry, Polarizers, Continuous wave operation, Time resolved spectroscopy

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Proceedings Article | 28 February 2012 Paper

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Kęstutis Jarašiūnas, Patrik Ščajev, Saulius Nargelas, Ramūnas Aleksiejūnas, Jacob Leach, Tania Paskova, Serdal Okur, Ümit Özgür, Hadis Morkoç

Proceedings Volume 8262, 82620G (2012) https://doi.org/10.1117/12.906303

KEYWORDS: Diffusion, Gallium nitride, Carrier dynamics, Luminescence, Excitons, Picosecond phenomena, Interfaces, Crystals, Transient nonlinear optics, Absorption

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Proceedings Article | 4 March 2011 Paper

Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

J. Leach, N. Biswas, T. Paskova, E. Preble, K. Evans, M. Wu, X. Ni, X. Li, Ü. Özgür, H. Morkoç

Proceedings Volume 7939, 79390E (2011) https://doi.org/10.1117/12.875755

KEYWORDS: Gallium nitride, Heterojunctions, Aluminum, Resistance, Semiconducting wafers, Sapphire, Crystals, Polishing, Epitaxy, X-ray diffraction

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Proceedings Article | 3 March 2011 Paper

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi, Jonas Ohlsson

Proceedings Volume 7939, 793907 (2011) https://doi.org/10.1117/12.874687

KEYWORDS: Gallium nitride, Magnesium, Metalorganic chemical vapor deposition, Doping, Excitons, Phonons, Luminescence, Acoustics, Quantum wells, Nanowires

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Proceedings Article | 18 March 2010 Paper

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

X. Li, X. Ni, J. Lee, M. Wu, Ü, Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 76021R (2010) https://doi.org/10.1117/12.843752

KEYWORDS: Light emitting diodes, External quantum efficiency, Gallium nitride, Electroluminescence, Quantum wells, Polarization, Indium gallium nitride, Sapphire, Internal quantum efficiency, Polarizers

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Proceedings Article | 12 March 2010 Paper

Internal quantum efficiency of m-plane InGaN on Si and GaN

J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 76021N (2010) https://doi.org/10.1117/12.843727

KEYWORDS: Light emitting diodes, Indium gallium nitride, Silicon, Gallium nitride, Sapphire, Polarization, Internal quantum efficiency, Quantum wells, Optical matrix switches, Optical components

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Proceedings Article | 11 March 2010 Paper

On carrier spillover in c- and m-plane InGaN light-emitting diodes

J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 760224 (2010) https://doi.org/10.1117/12.845806

KEYWORDS: Light emitting diodes, Electron beam lithography, Gallium nitride, External quantum efficiency, Polarization, Quantum wells, Indium gallium nitride, Internal quantum efficiency, Electroluminescence, Quantum efficiency

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Proceedings Article | 15 February 2008 Paper

The role of anisotropy for defect properties in a-plane GaN

R. Kröger, T. Paskova

Proceedings Volume 6894, 689403 (2008) https://doi.org/10.1117/12.763596

KEYWORDS: Gallium nitride, Aluminum nitride, Indium nitride, Anisotropy, Transmission electron microscopy, Sapphire, Crystals, Interfaces, Silicon carbide, Multilayers

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Proceedings Article | 15 February 2008 Paper

Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis

T. Paskova, A. Hanser, E. Preble, K. Evans, R. Kröger, F. Tuomisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, P. Paskov, B. Monemar

Proceedings Volume 6894, 68940D (2008) https://doi.org/10.1117/12.767628

KEYWORDS: Gallium nitride, Interfaces, Transmission electron microscopy, Sapphire, Ions, Metalorganic chemical vapor deposition, Gallium, Silicon, Visualization, Reflection

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Proceedings Article | 3 March 2006 Paper

Microscopic emission properties of nonpolar α-plane GaN grown by HVPE

T. Paskova, R. Kroeger, P. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck, S. Nakamura

Proceedings Volume 6121, 612106 (2006) https://doi.org/10.1117/12.645672

KEYWORDS: Gallium nitride, Transmission electron microscopy, Visualization, Metalorganic chemical vapor deposition, Sapphire, Point spread functions, Imaging spectroscopy, Scanning electron microscopy, Crystals, Edge emitting semiconductor lasers

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Showing 5 of 12 publications

Conference Committee Involvement (5)

Conference on Crystal Growth (3CG)

4 November 2014 |

CLEO Applications and Technology 2: Environment/Energy

8 June 2014 |

5th International Symposium on Growth of III-Nitrides (ISGN-5)

18 May 2014 |

8th International Workshop on Bulk Nitride Semiconductors

30 September 2013 |

19th American Conference on Crystal Growth and Epitaxy

21 July 2013 |

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