Vanadium thin films were deposited on silicon nitride substrates by direct current facing targets magnetron
sputtering, and then were annealed in room air ambient to form the vanadium oxide(VO<sub>x</sub>) thin films. The VO<sub>x</sub> thin films
made by this way have high TCR(Temperature Coefficient of Resistance) near room temperature. Compared with
reactive sputtering<sup>[1,2]</sup>, the metal-oxygenation method needs fewer preparative parameters which are very easy to control.
The main target of this paper is to study the electrical property of the VO<sub>x</sub> thin films, especially the relationship between
the TCR of VO<sub>x</sub> thin films and their preparative parameters. Orthogonal experiment was used to choose optimal
preparative parameters, which include sputtering pressure, sputtering time, annealing time and annealing temperature.
Then the resistance-temperature property was measured, and the results show that the VO<sub>x</sub> thin film which was prepared
after sputtered at 1.5 Pa for 20 minutes at room temperature and annealed at 400°C for 1.5h has the best
resistance-temperature property. And near room temperature, its TCR is -3.25%/K, which is twice as much as that of
metal material. And the VO<sub>x</sub> thin film has potential application in uncooled infrared microbolometer<sup>[3~5]</sup>.