Metallic tapes are used to reliably connect CIGS thin-film solar panels to the junction box. Compared to soldering and
gluing, ultrasonically bonding these tapes offers several benefits: a room-temperature process, lower consumable cost,
stronger and more reliable bonds, and lower contact resistance. A MoSe<sub>2</sub> layer can form on the back contact Mo layer
during the CIGS selenization. The thickness of the MoSe<sub>2</sub> layer varies with the details of the deposition and selenization
process. MoSe<sub>2</sub> is a solid lubricant that creates a low friction interface between the tape and Mo layer, thus reducing
ultrasonic coupling and making ultrasonic bonding more challenging. MoSe<sub>2</sub> also has a volume resistivity about 3,500
times higher than Mo. Its presence increases the tape contact resistance and thus reduces the efficiency of the solar
module. It is therefore desired to remove the MoSe2 layer to make a reliable connection. Several processes were
investigated on samples with varying MoSe<sub>2</sub> layer thickness. The effectiveness of those processes was studied and
evaluated by using Scanning Electron Microscope (SEM), Energy Dispersive X-ray Analysis (EDAX), 90° bond peel
test, and electrical contact resistance measurements. Complete removal of the MoSe2 layer without damaging the Mo
layer underneath was successfully achieved. Strong bonds with more than 900g peel force for 2.00mm (width) ×
0.10mm (thickness) Aluminum tapes and a low contact resistivity of <1.5 mΩcm2 were consistently demonstrated.
This paper presents the processing compatibility of ZnO piezoelectric film with MEMS devices. ZnO film has widely been used as an important element in the field of MEMS due to its good piezoelectric performance. The present investigations mainly focus on fabricating the ZnO film with good performance by optimizing the fabrication process. However, through our experiments, we found that further micromachining processes can badly modify the performance of ZnO film if they haven't been considered properly. Thus, different from other studies, this paper discusses techniques to keep the good piezoelectric performance of ZnO film in further processes after the ZnO film has been formed. These further processes for the device with ZnO film mostly include photolithography, wet and dry etching, stripping, cleaning, and depositing. The paper will present how these further processes change the performance of ZnO film and how to decrease or avoid the change of the performance, especially when the high temperature processes is needed. Some suggestion about process was given.