We report the experimental demonstration of a novel label-free optical immunosensor based on porous silicon
microcavity for the detection of Hydroxysafflor yellow A (HYSA). HYSA antibodies were immobilized into the porous
silicon using standard amino-silane and glutaraldehyde chemistry. We monitor the shift of the resonance dip in the
reflectance spectrum when HYSA-BSA is attached to the porous silicon microcavity. The label-free immunosensor is
simple and exhibit excellent sensitivity for HYSA antibodies with a sensitivity of 0.91nm/ng.
We report on the design of porous silicon based polarization band-pass filters, which is not only have excellent optical properties with p-polarization transmittance and s-polarization reflectance in the NIR field, but also can be used for excellent biosensor and gas sensing applications.
ZnS/CdS were deposited by chemical vapor deposition (CVD) technique on porous silicon substrates formed by electrochemical anodization of n-type (100) silicon wafer. The optical properties of ZnS/CdS porous silicon composite materials are studied. The results showed that new luminescence characteristics such as strong and stable visible-light emissions with different colors were observed from the ZnS/CdS-PS nanocomposite materials at room temperature.
Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by
preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the
photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity
of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of
defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers,
the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the
enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were