MoO<sub>x</sub> thin films were deposited are deposited by DC reactive magnetron sputtering at different technological conditions. Structural, electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the MoO<sub>x</sub> films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences α<sup>2</sup> = f(hν ), the presence of direct allowed interband optical transitions in the MoO<sub>x</sub> thin films is established and the optical band gap values are determined.
Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.