Anamorphic High-Numerical Aperture (NA) EUV photomask manufacturing presents some unique challenges and opportunities in Critical dimension (CD) Scanning electron microscope (SEM) metrology. Novel methods of beam scanning condition are needed to improve image resolution and reduce image blurring to enable reliable metrology for the curvilinear mask era. Additionally, electron optics stigmation monitoring plays a major role in ensuring the horizontal to vertical (X-Y) CD Average to target (ATT) tool matching is not drifting due to aberrations, which are key for anamorphic EUV mask metrology. In this paper, we show the correlation between offsets in Condenser lens, Aperture balance, and electron beam Stigmation offset and its impact on horizontal and vertical feature CD ATT and CD uniformity measurements. Using Advantest E36xx Scanning electron microscopes we also present preliminary results, from improving measurement repeatability (ATT and CDU) on different mask substrates by incorporating Shadow reduction scanning (SRS), enhanced charge suppression using Charge neutralization technology and modulating dose of the beam (which is a function of scan condition and beam condition) In conclusion, we summarize the key metrology advances needed for next generation CD-SEM tools for High NA EUV photomask metrology, such as automated column optics monitoring, shadow reduction scan, design-based site focusing, high degree of measurement precision better than 0.5 nm, charge mitigation capabilities, high Throughput (TPT), enhanced stage performance accuracy, among others.
We have developed novel Design Based Metrology (DBM) technology which enables metrology engineers to utilize not only 2-dimensional metrology with high precision but also high number CPU cores to reduce calculation time. It is crucial to maximize efficiency of parallel processing with high number of CPU cores and reduce overhead. We designed new DBM software based on the concepts of our novel DBM technology and build the DBM PC Cluster system consisting of the software and the latest computer system which meets the concept. The DBM PC Cluster system processing performance shows greater than several thousand images per hour capacity. In this paper, we will report the evaluation results and scalability for future mask metrology.
In the Mask D2I project at ASET, the authors evaluated an e-beam multi column cell exposure system with character
projection to expose photomask patterns of 65nm and 45nm node logic devices with OPC corrections. They prepared
more than 2,000 characters in a deflection area of a character projection mask extracted from the 65nm node logic device
pattern. The character projection in the multi column cell system could expose patterns equivalent to those by the
conventional variable shaped beams. In a typical pattern layout of photomasks of 45nm node logic devices, the four
column cell system required the exposure time of about 1/3 of the time required by a single column system. The
character projection could reduce the exposure time corresponding to the reduction of shot counts. The pattern priorities
also reduced the exposure time as the result of shot count reduction and minimizing wait time for deflection settling.
In the Mask D2I project at ASET, the authors evaluated an e-beam multi column cell exposure system with character
projection to expose photomask patterns of hp65nm and hp45nm devices. They prepared more than 2,000 characters in a
deflection area of a character projection mask extracted from the hp65nm pattern. The character projection in the multi
column cell system could expose patterns equivalent to those by the conventional variable shaped beams. In a typical
pattern layout of photomasks for hp45nm devices, the four column cell system required an exposure time of about 1/3 of
the time required by a single column system. The character projection can reduce the exposure time corresponding to the
reduction of shot counts.
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