All-inorganic perovskite quantum dots (QDs) have widely used in a lot of micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on All-inorganic perovskite QDs are relatively scarce. In this work, a RRAM, which exhibits the write-once-read-many-times (WORM) memory effect, based on CsPbBr<sub>3</sub> QDs was successfully fabricated by solution processed method at room temperature. The CsPbBr<sub>3</sub> QDs based memory shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 107. To study the CsPbBr<sub>3</sub> QDs based WORM memory provides an opportunity to develop the next generation high-performance and stable WORM devices.
Methylammonium lead halide perovskites have received substantial attention in photoelectric research communities, because of excellent optoelectronic properties, including long electron-hole diffusion distance, large absorption coefficients in the UV–Vis spectral region, low-cost, solution-based processing and low binding energy of exciton. Many records, such as efficiencies have been kept by these perovskite solar cells. However, other excellent properties, such as ultrafast properties have not been studies intensively. Here vertical field effect phototransistors (VFE<sub>p</sub>Ts) based on methylammonium lead halide perovskites were design and fabricated. VFE<sub>p</sub>Ts exhibit high performances including an ultrafast photoresponse time (less than 20 ns) and a high photoresponsivity (~ 10 mAW<sup>−1</sup>). The methylammonium lead halide perovskite vertical phototransistors open path on ultrafast devices with low cost solution fabrication process, but high level performances.