We report the design, fabrication, and characterization of 1310-nm-emission buried-heterostructure (BH) spot-size-converter (SSC)-integrated distributed-feedback (DFB) laser diode (LD) with record power efficiency of 20% at optical power of more than 100 mW at 75°C and current of 400 mA. The SSC also functions as semiconductor optical amplifier so that with laser oscillation takes place in the DFB section, the SSC provides optical gain while shaping the optical mode to give a lowest possible far-field (FF) of 9 ° ( h ) × 14.5 ° ( v ) . The measured coupling loss of the SSC-integrated DFB LD output to 10 μm-radius-of-curvature lensed single-mode-fiber is ∼0.9 dB. For Co-Package Optics application, the SSC-integrated DFB LD is a potentially viable candidate for External-Laser-Source module, or for hybrid-integrated laser-source on silicon photonics (SiPh) platform via flip-chip and butt-coupling of light to SiPh waveguide.
A new heterogeneously integrated III-V/Si laser structure is reported in this letter, which consists of a III-V
ridge waveguide gain section on silicon, III-V/Si optical vertical interconnect accesses (VIAs) and silicon-oninsulator
(SOI) nanophotonic waveguide sections. The III-V semiconductor layers are introduced on top of the 300
nm thick SOI layer through low temperature, plasma assisted direct wafer-bonding and etched to form III-V ridge
waveguide on silicon as the gain section. The optical VIA is formed by tapering the III-V and the beneath SOI in
the same direction with a length of 50 μm for efficient coupling of light down to the 600 nm wide silicon
nanophotonic waveguide or vice versa. Fabrication details and specification characterizations of this heterogeneous
III-V/Si Fabry–Pérot (FP) laser are given. The fabricated FP laser shows a continuous-wave lasing with a threshold
current of 65 mA at room temperature and the slope efficiency from single facet is 144 mW/A. The maximal single
facet emitting power is about 4.5 mW at a current of 100 mA and the side-mode suppression ratio is ~30 dB. This
new heterogeneously integrated III-V/Si laser structure demonstrated enables more complex laser configuration
with a sub-system on-chip for various applications.
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