This LETI/Sofradir/Defir study aims at realizing sub-10 μm pitch HgCdTe infrared FPAs. To cope with the different diode process issues related to pitch reduction-morphologic realization, short-circuits, FTM optimization - a parametric study was carried out - contact size, passivation properties, doping levels, diode processing conditions-. A wafer-level test campaign was conducted to evaluate the process window. It revealed functional MWIR diodes from 15 μm to 3 μm pitch. 7.5 μm pitch 640×512 and 5 μm pitch 64×152 FPA were characterized and turned out to be functional.