A low-cost transistor outline-CAN (TO-CAN) package, which is combined with flexible printed circuit board (PCB) and hard PCB, has been developed for a 25-Gb/s optical subassembly module. On the flexible PCB, the transmission line structure used top ground microstrip line, and the wider transmission bandwidth can be obtained. Using ground pads and ground notch technologies, the impedance of connection between flexible PCB and hard PCB was designed to match with the impedances of signal traces of the flexible and hard PCBs. In the TO-CAN package, a TO-46 header was used, and the header needs to closely connect with the flexible PCB. The bandwidth of TO-46 package combined with flexible and hard PCBs can achieve above 23 GHz. The clear 25-Gb/s transmission eye diagram was also measured, and the rise time, fall time, and Q-factor of the eye diagram are 13.78, 13.56 ps, and 8.76, respectively. The TO-46 package combined with flexible and hard PCBs has been verified to be suitable for application in 25-Gb/s optical subassembly modules.
A new 5-pin transistor outline (TO-Can) header for conventional coaxial laser package has been proposed and
demonstrated by using a three-dimensional full-wave electromagnetic simulation tool. The applicability of the simulation
tool was verified by a measurement result of a conventional TO-56 header. By adopting a two-session feed-through via
and a bent feed-lead, this TO-Can header has the optimal impedance for high-speed modulation. The reflection loss can
be controlled beneath -10-dB before 15-GHz with a 50-Ω termination. The 3-dB modulated bandwidth with a load
impedance of 5-Ω and 50-Ω is over 23-GHz and 37-GHz, respectively. This TO-Can header provides a low-cost coaxial
laser package solution with widely load impedances from 5-Ω to 50-Ω and may apply in the emerging 100-Gigabits
Ethernet (100GbE) and next generation Fiber Channel (20GFC) applications.
In this paper, we proposed the design of directional coupler integrated with ring resonator based on two-dimensional
photonic crystals (2D PCs) to develop a triplexer filter. It can be widely used as the fiber access network element for
multiplexer-demultiplexer wavelength selective in fiber-to-the-home (FTTH) communication systems. The directional
coupler is chosen to separate the wavelengths of 1490nm and 1310nm. The ring resonator separates the wavelength of
1550nm. The transmission efficiency is larger than 90%. Besides, the total size of propose triplexer is only 19μm×12μm.
We present simulation results using the finite-difference time-domain (FDTD) method for the proposed structure.
A 10 Gb/s bi-directional optical subassembly (BOSA) with an uncooled 1300nm DFB laser and a receiving PIN-TIA had
been assembled and characterized. This 10 Gb/s BOSA integrated a 45o-tilted thin film WDM filter which can transmit
the 1300nm light into the fiber and reflect the 1550nm light into the PIN-TIA. At the transmitter side, the -3dB
modulation bandwidth was measured to be 11.86GHz and an OC-192 eye diagram with 19% mask margin was obtained.
At the receiver side, the sensitivity was -13.1dBm at the bit error rate of 10-9 and the eye mask margin of OC-192 was
more than 30%.
Electron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be capture into QW 2D states than hole does. The sequence of the nonidentical QWS is also shown to have significant influence on device characteristics.
Extremely broadband emission is obtained from superluminescent diodes/semiconductor laser amplifiers with nonidentical quantum wells made of InGaAsP/InP materials. Two opposite sequences of nonidentical multiple quantum wells (MQWs), consisting of three In0.67Ga0.33As0.72P0.28 quantum wells and two In0.53Ga0.47As QWs, are designed, fabricated, and measured. Nonuniform carrier distribution inside MQWs is further verified experimentally.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print format on
SPIE.org.