Similar to superconductivity, Quantum Hall Effects<sup>1,2</sup> (QHE) are macroscopic quantum phenomenon that arise from electronic condensation into a new form of strongly correlated quantum liquid. Typically QHE are observed in very high mobility, two-dimensional, electron (hole)-gas or (TDEG) systems under high magnetic fields and at low temperatures (T), i.e., in the extreme quantum limit. Quantum Hall effect is applied as calibration benchmark, international resistance standard, and a characterization technique for semiconductor heterostructures. Applications can be widespread if the devices and the operating conditions were more accessible. Here we report results of magneto resistance measurements in a novel bulk porous semiconducting structure, carbon replica opal. We show universality of QHE in TDEG, in porous semiconductor and bulk semiconductors. The data were analyzed to provide evidence of both fractional and integer quantum hall effects (2/3, 4/5, 1, etc) in our porous system at a remarkably high temperature T~40K and in a very soft quantum limit.