Dr. Tirthajyoti Sarkar
Senior Device Engineer
SPIE Involvement:
Area of Expertise:
Semiconductor device design , Power electronics , Device simulation
Profile Summary

Dr. Tirthajyoti Sarkar received the B.Tech. degree (with President’s Silver Medal Honor) from the Indian Institute of Technology Kharagpur, India, in 2003, and the Ph.D. degree in electrical engineering from the University of Illinois, Chicago, in 2009. He worked as a Postdoctoral Research Associate in the Department of Electrical and Computer Engineering, University of Illinois.

He currently holds the Senior Device Engineer position at Fairchild Semiconductor and works in the area of modeling, simulation, and technology development of low- and medium-voltage power MOSFETs. His research interests include power semiconductor devices, high-frequency and high-performance power electronic systems, and novel semiconductor device simulation and modeling. Dr. Sarkar has authored 20 peer-reviewed journal and international conference papers. He received “Joseph J. Suozzi International Fellowship in Power Electronics” from the IEEE Power Electronics Society in 2007 for his work on optical triggering in power electronics. Dr. Sarkar is a life member of Semiconductor Society of India and a member of IEEE Electron Device Society and IEEE Power Electronics Society.
Publications (1)

Proceedings Article | 15 October 2012
Proc. SPIE. 8549, 16th International Workshop on Physics of Semiconductor Devices
KEYWORDS: Switching, Resistance, Power supplies, Field effect transistors, Electrodes, Doping, Semiconductors, Oxides, Circuit switching, Semiconductor physics

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