We have grown a heterostructure of YBCO/STO/YBCO on (100) MgO substrate for fabrication of SXS junction. The epitaxial YBCO films were grown by MOCVD method, and the STO layer was deposited by unbalanced magnetron sputtering method. All of films are dominated by a-axis oriented phases. The individual YBCO films revealed critical-current densities around 2.5 X 105 A/cm2 at 77 K. The resistive transition observed in the vertical transport devices is dominated by the X layer properties. These devices display RSJ-type I-V characteristics and the values of IcRn significantly depend on the X layer thickness. The SXS junction with STO layer of 0.1, 0.2 and 0.3 micrometers have IcRn of 115, 90 and 42 (mu) V, respectively.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.