Tip-based nanoscopy techniques have emerged as powerful tools for probing the exceptional optoelectronic properties of van der Waals crystals (vdW) on deeply sub-wavelength scales. Based on two sets of experiments, we demonstrate how bound electron–hole pairs – so-called excitons – can be interrogated with near-field microscopy. First, we build on terahertz nanoscopy with subcycle temporal resolution to access the separation of photo-carriers via interlayer tunneling and their subsequent recombination in transition metal dichalcogenide bilayers. By tracing the local polarizability of electron–hole pairs with evanescent terahertz fields, we reveal pronounced variations of the exciton dynamics on the nanoscale. This approach is uniquely suitable to reveal how ultrafast charge transfer processes shape functionalities in a variety of solid-state systems. Second, we image waveguide modes (WMs) in thin flakes of the biaxial vdW crystal ReS2 across a wide range of near-infrared frequencies. Resolving the dependence of the WM dispersion on the crystallographic direction, polarization of the electric field and sample thickness, enables us to quantify the anisotropic dielectric tensor of ReS2 including the elusive out-of-plane response. The excitonic absorption at ~1.5 eV induces a backbending of the dispersion and increased losses of the WMs as fully supported by numerical calculations. Thus, we provide crucial insights into the optical properties of ReS2 and explore light-matter coupling in layered, anisotropic waveguides. Our findings set the stage for probing ultrafast dynamics in biaxial vdW crystals on the nanoscale.
Perfect absorption is desired in many photonic devices, in particular in optoelectronic switches, where the ability to change electrical conductivity with photoexcitation enables fast detectors and modulators. A metallic layer is typically introduced underneath the absorbing layer to realize perfect absorption, however this approach is often impractical for photoconductive devices. Here, we demonstrate perfect absorption using an all-dielectric metasurface consisting of a network of electrically connected nanoscale GaAs resonators. We develop a metasurface structure supporting two critically-coupled and degenerate magnetic dipole modes, with their effective magnetic dipole vectors in and out of the metasurface plane. Since the latter mode is symmetry-protected for incident waves at normal incidence, we break the resonator symmetry to enable excitation of the two modes simultaneously. We provide a physical model for the metasurface design and support it with detailed numerical simulations and experimental verification. We show that this metasurface can be switched between conductive and resistive states with extremely high contrast using an unprecedentedly low level of optical excitation.
Funding statement: Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA-0003525.
Performance of terahertz (THz) photoconductive devices, including detectors and emitters, has been improved recently by means of plasmonic nanoantennae and gratings. However, plasmonic nanostructures introduce Ohmic losses, which limit gains in device performance. In this presentation, we discuss an alternative approach, which eliminates the problem of Ohmic losses. We use all-dielectric photoconductive metasurfaces as the active region in THz switches to improve their efficiency. In particular, we discuss two approaches to realize perfect optical absorption in a thin photoconductive layer without introducing metallic elements. In addition to providing perfect optical absorption, the photoconductive channel based on all-dielectric metasurface allows us to engineer desired electrical properties, specifically, fast and efficient conductivity switching with very high contrast. This approach thus promises a new generation of sensitive and efficient THz photoconductive detectors. Here we demonstrate and discuss performance of two practical THz photoconductive detectors with integrated all-dielectric metasurfaces.
Detection of terahertz (THz) radiation with high sensitivity and efficiency remains a challenging problem for THz technology development. A photoconductive THz detector based on the Auston switch concept is among the most sensitive and widely-used room-temperature coherent THz detectors. Plasmonic nano-antennas and gratings, and ultrathin optical cavities recently were introduced in the structure of THz optoelectronic devices to improve their efficiencies. It allowed obtaining higher photocurrents and smaller capacitance, which lead to improvements in the response speed and efficiency of THz detectors.
Plasmonic nanostructures however introduce Ohmic losses, which can substantially reduce the responsivity of THz detectors. Alternatively, efficiency of photoconductive THz detectors can be enhanced by using all-dielectric metasurfaces. A metasurface containing only dielectric, instead of plasmonic nanostructures, can be designed to trap the incident light in a selected spectral range and thus enhance optical absorption.
We designed an optically-thin photoconductive channel as an all-dielectric metasurface, which exhibited enhanced optical absorption at laser excitation wavelength. The metasurface comprised an array of low-temperature grown GaAs nanobeams and a sub-surface distributed Bragg reflector. Integrated into a photoconductive (Auston) switch, the metasurface improved the efficiency and sensitivity of the THz detector. Specifically, the detector produced photocurrents over one order of magnitude higher compared to a similar detector with unstructured surface with only 0.5 mW of optical excitation, while exhibiting high dark resistance required for low-noise detection in THz time-domain spectroscopy and imaging. At that level of optical excitation the metasurface detector showed a high signal to noise ratio of 10^6. We will discuss mechanisms responsible for the efficiency improvement, as well as the application of THz detectors with all-dielectric metasurfaces for enabling more sensitive integrated THz near-field probes.
We demonstrate an efficient terahertz (THz) detector based on an optical hybrid cavity, which consists of an optically thin photoconductive layer between a distributed Bragg reflector (DBR) and an array of electrically isolated nanoantennas. Using a combination of numerical simulations and optical experiments, we find a hybrid cavity design which absorbs <75% of incident light with a 50 nm photoconductive layer. By integrating this optical hybrid cavity design into a THz detector, we see enhanced detection sensitivity at the operation wavelength (~815 nm) over designs which do not include the nanoantenna array.
We propose and demonstrate a scattering-type near-field probe, designed to increase the sensitivity of high-resolution scattering probe microscopy at terahertz (THz) frequencies. For efficient scattering of THz radiation, the probe, fabricated from indium, is designed to resonate like a dipole antenna. Efficient excitation is achieved by integrating the probe with a radially-polarized THz source. Using time-domain spectroscopy (TDS), we observe resonant enhancement of the scattered fields, and using aperture-type near-field microscopy, we see high field confinement at the scattering probe apex.
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