Dr. Tomasz Sochacki Profile

Dr. Tomasz Sochacki

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (6)

PROCEEDINGS ARTICLE | March 14, 2018

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Nanostructures, Crystals, Aluminum, Epitaxy, Gallium

PROCEEDINGS ARTICLE | March 14, 2018

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Crystals, Doping, Gallium nitride, Manganese, Gallium, Temperature metrology

PROCEEDINGS ARTICLE | February 26, 2016

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Proc. SPIE. 9748, Gallium Nitride Materials and Devices XI

KEYWORDS: Reflection, Etching, Crystals, Silicon, Raman spectroscopy, Gallium nitride, Sapphire, Photomasks, Molybdenum, Semiconducting wafers

PROCEEDINGS ARTICLE | March 13, 2015

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Quartz, Crystals, Interfaces, Silicon, Gases, Hydrogen, Nitrogen, Oxygen, Raman spectroscopy, Gallium nitride

PROCEEDINGS ARTICLE | March 4, 2013

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Polishing, Magnesium, Crystals, Indium, Nitrogen, Oxygen, Gallium nitride, Liquid crystals, Gallium, Liquids

PROCEEDINGS ARTICLE | March 4, 2013

HVPE-GaN growth on ammonothermal GaN crystals

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Polishing, Etching, Quartz, Annealing, Crystals, X-rays, Interfaces, Gallium nitride, Gallium, Surface finishing

Showing 5 of 6 publications

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