Dr. Tomasz Swietlik Profile

Dr. Tomasz Swietlik

at Institute of High Pressure Physics

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Publications (7)

PROCEEDINGS ARTICLE | February 21, 2011

Next generation 8xx nm laser bars and single emitters

Proc. SPIE. 7918, High-Power Diode Laser Technology and Applications IX

KEYWORDS: Semiconductor lasers, Laser applications, Continuous wave operation, Laser welding, High power lasers, Laser development, Luminescence, Pulsed laser operation, Laser marking, Mirrors

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Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application resulting in different laser designs to fulfill requirements in output power, operation temperature and lifetimes. The output power is limited by self heating and catastrophic optical mirror damage at the laser facet (COMD). Now we present data on bars fabricated with our new facet technology, which enables us to double the maximum facet load. We present q-cw laser bar with 80% fill factor with increased power level to 350W in long term operation at 200μs and 100Hz. The COMD limit of the bar is as high as 680W. Using Quantel's optimized packaging stacks with 11 bars of 5mm widths are tested at up to 120A resulting over 66% power conversion efficiency at 1600W output power. Laser bars for continuous wave operation like 50% fill factor bars had an COMD limit of approx. 250W with conventional facet technology, the value is equivalent to 10W per 200μm emitter (conditions: 200μs). The new facet technology pushes the facet stability to 24W/emitter. The new process and an improved design enable us to shift continuous wave operation at 808nm from 100W to 150W/bar with lifetimes of several thousand hours at 30°C using DILAS mounting technology. Higher power is possible depending on lifetime requirements. The power conversion efficiency of the improved devices is as high as 62% at 200W cw. The next limitation of 8xxnm lasers is high temperature operation: Values of 60-80°C are common for consumer applications of single emitters. Therefore Osram developed a new epitaxial design which reduced the generation of bulk defects. The corresponding Osram single emitters operate at junction temperatures up to 95°C, a value which corresponds to 80°C heat sink temperature for lasers soldered on C-mount or 65°C case temperature for lasers mounted in TO can. Current densities of the single emitter broad area lasers are as high as 1.4kA/cm² at 850nm emission wavelength.

PROCEEDINGS ARTICLE | February 28, 2008

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Temperature metrology, Indium gallium nitride, Quantum wells, Gallium nitride, Semiconductor lasers, Laser damage threshold, Laser stabilization, Spectroscopes, Phonons, Copper

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PROCEEDINGS ARTICLE | February 8, 2007

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Proc. SPIE. 6473, Gallium Nitride Materials and Devices II

KEYWORDS: Gallium, Gallium nitride, Luminescence, Semiconductor lasers, Quantum wells, Aluminum, Optical properties, Plasma, Waveguides, Photons

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PROCEEDINGS ARTICLE | April 17, 2006

Load dislocation density broad area high power CW operated InGaN laser diodes

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, Gallium nitride, Indium gallium nitride, High power lasers, Gallium, Crystals, Aluminum

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PROCEEDINGS ARTICLE | February 22, 2006

Broad-area high-power CW operated InGaN laser diodes

Proc. SPIE. 6133, Novel In-Plane Semiconductor Lasers V

KEYWORDS: Semiconductor lasers, Continuous wave operation, High power lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Pulsed laser operation, Diodes, Gallium, Crystals

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PROCEEDINGS ARTICLE | April 1, 2005

Properties of violet laser diodes grown on bulk GaN substrates

Proc. SPIE. 5738, Novel In-Plane Semiconductor Lasers IV

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Laser crystals, Gallium, Electrons, Cladding, Pulsed laser operation, Aluminum, Continuous wave operation

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PROCEEDINGS ARTICLE | May 11, 2004

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Proc. SPIE. 5365, Novel In-Plane Semiconductor Lasers III

KEYWORDS: Gallium nitride, Crystals, Semiconductor lasers, High power lasers, Diodes, Sapphire, Gallium, Temperature metrology, Mirrors, Etching

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Showing 5 of 7 publications

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