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Tomohiro Tsuchiya
at Kyushu Univ.
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Publications (1)
Proceedings Article | 20 February 2017 Presentation + Paper
Damage free Al doping on 4H-SiC with passivation films using XeF excimer laser irradiation in AlCl3 acid solution
T. Tsuchiya, A. Suwa, A. Ikeda, D. Nakamura, T. Asano, H. Ikenoue
Proceedings Volume 10091, 1009106 (2017) https://doi.org/10.1117/12.2250712
KEYWORDS: Silicon carbide, Doping, Aluminum, Excimer lasers, Laser irradiation, Luminescence, Silicon, Physical vapor deposition, Wet etching, Plasma treatment, Electroluminescence, Laser ablation, Diodes
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