Highly oriented ferroelectric strontium barium niobate (Sr0.6Ba0.4Nb2O6) thin films were prepared on P-type Si(100) substrate by the Sol-Gel process. The XRD patterns of the SBN films show that SBN film prepared by using NbCl5, KOH as raw materials performed a highly c-axis preferred orientation perpendicular to the Si substrate, better than films that was prepared using Nb(OC2H5)5 as starting agents. It may be duo to the existence of the potassium ion that not be filtered out completely during the preparation of the niobium alkoxide. The characteristics of D-F and C-V curves were obtained for SBN/Si film. The film exhibits high dielectric constant. In order to investigate ferroelectric characteristics further, the P-E loops of the SBN/Pt/Si were also measured. The films show better optical properties, transmittance of Sr0.6Ba0.4Nb2O6 films on MgO(001) and SiO2 substrates was more than 60% at the range from 450 to 850nm, refractive index was measured to be 2.14 and 2.12 on the MgO and SiO2 substrate at 633nm respectively.
ZnO were deposited on sapphire and silicon substrates by RF magnetron sputtering from a metallic zinc target. The structural and optical propertied of ZnO films were studied by X-ray diffraction, and UV-VIS-NIR scanning spectrophotometer. XRD measurements show ZnO films had a preferential orientation along the c-axis. Only one peak, (002) phase, appears on the diffraction spectra. The transmittance spectra indicate that ZnO films possessed a transmittance of about 80% in the visible region and a sharp absorption edge at wavelength of about 390nm. The refractive index n and the extinction coefficient k are all sensitive to the oxygen partial pressure and the substrate temperature. Furthermore, based on the ideal five layers symmetrical waveguide films, the relationships of the loss and the thickness of the waveguide layer and the buffer layer were analyzed using ZnO as waveguide layer and SiO2 as buffer layer.