A high current density over 1000 A/cm<sup>2</sup> operation in small chip size m-plane GaN-LED has been successfully
demonstrated. The LED with chip size 450 × 450 μm<sup>2</sup> has emitted 1353 mW in light output power and 39.2% in external
quantum efficiency (EQE) at 1000 A/cm<sup>2</sup> (1134 mA). The m-plane GaN-LED has showed asymmetric radiation
characteristics. The radiation patterns are controlled by the surface of LED package, the height of LED chip, and striped
texture on top m-plane surface.