As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in high volume manufacturing (HVM), with non-destructive technology, has mostly been limited to the depth and top width of the DTI structure, while the bottom width (BCD) has not been able to be reliably measured. Here we present two different optical metrologies, “conventional” OCD and IRCD, that operate in the UV-VIS-NIR and MIR region of the electromagnetic spectrum, respectively, and discuss the measurability of DTI sidewall profile, bottom width, and depth in BCD (Bipolar CMOS DMOS) power management IC devices for each method at various pitches and line to space ratios. Experimental data will be presented showing sensitivity and discrimination of IRCD to a DOE specifically on the bottom width for three different structures.
The W-Recess step for 3D NAND replacement gate process currently has no in-line process control solution. W replacement renders the structure opaque in the ultraviolet/visible/near-infrared (UV/VIS/NIR) region beyond just a few tier layers in the most advanced 3D NAND devices. Additionally, increased word line (WL) slit pitch scaling further reduces the already minimal optical signal from the top of the structure. Through finite-difference time-domain (FDTD) and optical critical dimension (OCD) simulations, we show that a specially designed, design rule-compliant (that is, possessing a slit pitch matching the device) ellipsometry target permits mid-IR light to completely penetrate through oxide metal (OM) pairs, enabling measurement of the W-Recess Z-profile. Furthermore, recent experimental data measured on the designed target in >200 pair 3D NAND node prove that mid-IR light has sensitivity to the slit bottom. An OCD model was developed and showed good design of experiment (DOE) discrimination capability and reference correlation.
A unique challenge has emerged in the Channel Hole process module of advanced 3D NAND manufacturing: control of the lateral silicon nitride recess post Channel Hole etch. A novel mid-infrared critical dimension (IRCD) metrology has been developed on a platform suitable for fab production. Compared traditional optical critical dimension (OCD) technology based on ultraviolet, visible, and near-IR light, the IRCD system exploits unique optical properties of common semiconductor fab materials in the mid-IR to enable accurate measurements of high-aspect-ratio (HAR) etches with high Z dimensional fidelity. Utilizing the mid-IR wavelength range, a robust and unique measurement methodology is demonstrated to measure the lateral silicon nitride recess that occurs post channel hole etch due to etch bias between silicon dioxide and silicon nitride. IRCD metrology is proven to have higher unique sensitivity for lateral silicon nitride recess than other inline non-destructive metrology techniques.
Monitoring the high aspect ratio etch profiles in state-of-the-art three-dimensional NAND memory fabrication processes has pushed metrology technologies to new limits. Here, we discuss how a mid-infrared ellipsometric measurement can yield angstrom level discrimination in critical dimension changes of memory channel hole (CH) profiles across such a memory chip. Using finite-difference time-domain and rigorous coupled-wave analysis simulations, we demonstrate how dispersion mitigated mid-infrared beam penetration into these memory structures permits parameter decorrelation and the measurement of the full CH profile.
A novel mid-infrared critical dimension (IRCD) metrology has been developed on a platform suitable for fab production. Compared to traditional optical critical dimension (OCD) technology based on ultraviolet, visible, and near-IR light, the IRCD system exploits unique optical properties of common semiconductor fab materials in the mid-infrared to enable accurate measurements of high-aspect-ratio etched features. In this paper, we will show two examples of critical dry etch steps in 3D NAND channel formation module of an advanced node that require nondestructive process control: (1) channel hole active area etch and (2) amorphous carbon hardmask etch. In the first example, we take advantage of the absorption bands of silicon dioxide and silicon nitride to get accurate CD measurements at different depths, resulting in high-fidelity z-profile metrology of the channel – key to guiding process development and accelerated learning for 3D NAND device manufacturing. In the second example, the most common amorphous carbon hardmask materials for advanced 3D NAND nodes are opaque in the traditional OCD wavelength range; however, in the mid-infrared, there is light penetration and hence spectral sensitivity to dimensional parameters including sub-surface features. We show successful detection of intentional process skews and as well accurate bottom CD measurements of the hardmask.
We demonstrate the steering of coherent mid-infrared radiation through plasmonic structures consisting of a
single sub-wavelength slit flanked by a periodic array of grooves, fabricated on GaAs substrates. We demonstrate
control of steering angle by tuning the incident radiation, and study beam quality for the transmitted light. In
addition, we demonstrate that small shifts in the refractive index of the GaAs substrate can actively control the
steering angle of the transmitted light, opening a path towards the development of no-moving-parts plasmonic
beam steering devices.
We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots
coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are
patterned into the top contact of the broadband (9-15 μm) quantum dot material and the measured electroluminescence
is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting
in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values
for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral
characteristics of device emission when using strong coupling parameters.
We demonstrate room temperature electroluminescence from intersublevel transitions in self-assembled InAs quantum
dots in GaAs/AlGaAs heterostructures. The quantum dot devices are grown on GaAs substrates in a Varian Gen II
molecular beam epitaxy system. The device structure is designed specifically to inject carriers into excited conduction
band states in the dots and force an optical transition between the excited and ground states of the dots. A downstream
filter is designed to selectively extract carriers from the dot ground states. Electroluminescence measurements were
made by Fourier Transform Infrared Spectroscopy in amplitude modulation step scan mode. Current-Voltage
measurements of the devices are also reported. In addition, both single period and multi-period devices are grown,
fabricated, characterized, and compared to each other. Finally, we discuss the use of plasmonic output couplers for these
devices, and discuss the unique emission observed when the quantum dot layer sits in the near field of the plasmonic top
contacts.
We demonstrate active control of propagating surface waves on a mid-infrared extraordinary optical transmission
grating. The surface waves are excited at the interface between a GaAs substrate and a periodically patterned metal film
using a dual wavelength quantum cascade laser. The spectral properties of the laser and the transmission grating are
characterized by Fourier Transform Infrared spectroscopy. In addition, the far-field emission from excited surface
waves at the metal/GaAs interface is studied using a novel spatial and spectral imaging technique. By actively
controlling the optical properties of the grating, we demonstrate the ability to control the coupling of incident coherent
radiation to surface waves on the grating. With increased tunability of the grating, directional control of excited surface
waves should be achievable. These results suggest that the development of actively tunable plasmonic structures could
result in plasmonic routers and switches for interconnect or sensing applications.
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