Optical metrology tool, LX530, is designed for high throughput and dense sampling metrology in semiconductor manufacture. It can inspect the dose and focus variation in the process control based on the critical dimension (CD) and line edge roughness (LER) measurement. The working principle is shown with a finite-difference-time-domain (FDTD) CD simulation. Two optical post lithography wafers, including one focus-exposure-matrix (FEM) wafer and one nominal wafer, are inspected for CD, dose and focus analysis. It is demonstrated that dose and focus can be measured independently. A data output method based on global CD uniformity (CDU), inter CDU and intra CDU is proposed to avoid the data volume issue in dense sampling whole wafer inspection.
We have developed a sensor optical system for the Far Infrared Interferometric Telescope (FITE). The spatial
resolution of FITE is expected to be 2.5 arcseconds. In order to derive the spatial extent of target objects, the
visibility of interference fringes has to be measured precisely. For this purpose, we constructed the focal plane
assembly of the FITE interferometer with the sensor optics. The focal plane is the entrance focus of the sensor
optics. A far-infrared (FIR) array detector is installed on the final focal plane of the sensor optics. Its camera
optics has F/106 beam for each beam of the interferometer. The PSF is dominated by diffraction, and its size
corresponds approximately to the array size so that the fringe pattern can be measured by the array in real time.
This system employs of two IR detectors and an optical CCD. The FIR detector has a format of 1.5mm ×15
pixels. In addition to the FIR array detector, we have a mid-IR detector and an optical CCD. They are also
installed on the final focal plane of the sensor optics. These two detectors are used for the precise alignment of the