Dr. Ulrich Klostermann Profile

Dr. Ulrich Klostermann

at Synopsys GmbH

SPIE Involvement:

Author

Publications (33)

Proceedings Article | 5 October 2023 Paper

Paper

Efficient mask characterization through automated contour and corner rounding extraction

Rainer Zimmermann, Joost Bekaert, Mariya Braylovska, Balakumar Baskaran, Vicky Philipsen, Martin Bohn, Michael Bachmann, Ulrich Klostermann, Eric Hendrickx, Wolfgang Demmerle

Proceedings Volume 12802, 128020J (2023) https://doi.org/10.1117/12.2675486

KEYWORDS: Scanning electron microscopy, Contour extraction, Lithography, Semiconducting wafers, Critical dimension metrology, Calibration, Image quality, Contour modeling, Mask making

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Proceedings Article | 1 May 2023 Presentation + Paper

Presentation + Paper

Computational patterning and process variation impact on photonics devices

Maryvonne Chalony, Lawrence Melvin, Rainer Zimmermann, Bernd Küchler, Emilie Viasnoff, Robert Scarmozzino, Daniel Herrmann, Yves Saad, Phil Stopford, Thuc Dam, Ulrich Klostermann, Wolfgang Demmerle, Al Blais, Remco Stoffer

Proceedings Volume 12499, 124990A (2023) https://doi.org/10.1117/12.2658788

KEYWORDS: Design and modelling, Manufacturing, Polarization, Optics manufacturing, Photonic devices, Optical lithography, Incident light, Metalenses, Geometrical optics, Optical proximity correction

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Evaluation of field stitching optimization for robust manufacturing with high-NA EUVL

Zachary Levinson, Thuc Dam, Paul Pfaeffli, C. Jay Lee, Wolfgang Hoppe, Ulrich Klostermann, Kevin Lucas

Proceedings Volume 12495, 124950B (2023) https://doi.org/10.1117/12.2659721

KEYWORDS: Reticles, Etching, Tolerancing, Extreme ultraviolet lithography, Simulations, Mirrors, Scanners, Manufacturing, Semiconducting wafers, Metals

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Electrical analysis of a stochastically simulated 2 nm node electrical test structure

Lawrence Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary Levinson, Hans-Jürgen Stock, Ulrich Welling

Proceedings Volume 12495, 124950W (2023) https://doi.org/10.1117/12.2658780

KEYWORDS: Stochastic processes, Resistance, Simulations, Overlay metrology, Optical lithography, Lithography, Optical proximity correction, Ruthenium, Etching

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Process optimization for next generation high-NA EUV patterning by computational lithography techniques

Zachary Levinson, Thuc Dam, Pervaiz Kareem, C. Jay Lee, Wolfgang Demmerle, Ulrich Klostermann

Proceedings Volume 12494, 124940W (2023) https://doi.org/10.1117/12.2658580

KEYWORDS: Extreme ultraviolet, SRAF, Semiconducting wafers, Extreme ultraviolet lithography, Optical lithography, Scanners, Reflection, Lithography, Computational lithography, Process control

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The lithography industry has historically striven to improve resolution by reducing wavelength and increasing the lens’ numerical aperture (NA). The introduction of 0.33 NA extreme ultraviolet (EUV) lithography into high-volume manufacturing (HVM) represents the largest jump in resolution ever achieved by the industry. However, even this resolution is not sufficient for the patterns required for beyond the 2 nm logic technology node. This is due to low contrast and the diffraction limit of current EUVL scanners for the mask patterns required for these nodes. Instead, the resolution must be improved by increasing the NA. This will also increase the contrast of patterns which had insufficient contrast at 0.33 NA, which will in turn improve LCDU and defectivity. This change is not without its challenges though. Increasing the NA from 0.33 to 0.55 will cause a significant reduction in depth of focus. In addition, stronger mask 3D effects can cause pattern dependent shifts in best focus. As a result, the common overlapping process window of several critical patterns can become strongly diminished. The use of anamorphic optics will require two separate half-field exposures to obtain the equivalent of a single full-field exposure on current EUV and DUV scanners. For some chip sizes, this will require stitching two half-fields together to pattern the full chip area. In previous technology nodes, the process window could be improved using SMO and SRAFs. In addition, over the last five years, the industry has put significant effort into studying alternative absorbing materials. These materials can significantly reduce the mask 3D effects by reducing the thickness of the absorber. The use of alternative absorbers alone will not be sufficient for improving the overlapping process window. Instead, several techniques must be simultaneously utilized in order to ensure sufficient overall process window. Optimization of overlapping process windows is critical for successful insertion of high-NA EUVL into HVM. In this paper we analyze how the process window of critical patterns can be optimized by using different optimizations. We will show for realistic mask designs how process window can be improved in different process steps. Double exposure from half-field stitching will also be included in the process evaluation. We use both rigorous and compact modeling in a complimentary fashion for overall process optimization analysis. All techniques presented in this paper accurately model the anamorphic, centrally obscured optics of the upcoming next-generation high-NA scanners.

Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Mask synthesis for silicon photonics devices

Rainer Zimmermann, Luis Orbe, Bernd Küchler, Ji Li, Jim Burdorf, William Stanton, Tung-Yu Su, Remco Stoffer, Ulrich Klostermann, Wolfgang Demmerle

Proceedings Volume 12148, 1214809 (2022) https://doi.org/10.1117/12.2620724

KEYWORDS: Optical proximity correction, Photomasks, Waveguides, Photonic devices, Lithography, Line edge roughness, Stochastic processes, Photonics, Signal to noise ratio

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Contour-based model calibration to a minimum number of patterns

Bernd Küchler, Francois Weisbuch, Wolfgang Hoppe, Jirka Schatz, Martin Bohn, Ulrich Klostermann

Proceedings Volume 11613, 116130G (2021) https://doi.org/10.1117/12.2584714

KEYWORDS: Calibration, Data modeling, Resolution enhancement technologies, Process modeling, Scanning electron microscopy, Data acquisition, Optical lithography, Metrology, Lithography, Computer simulations

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Proceedings Article | 15 May 2020 Presentation + Paper

Presentation + Paper

An application study on the stochastic effect of EUV photons

Jongsu Kim, Hyekyoung Jue, Hyungju Ryu, Sang-Jin Kim, Joon-Soo Park, Kyoungsub Shin, Ulrich Welling, Jürgen Preuninger, Ulrich Klostermann, Hans-Jürgen Stock, Wolfgang Demmerle, Eun-Soo Jeong, Sang-Yil Chang, Jung-Hoe Choi

Proceedings Volume 11323, 113231E (2020) https://doi.org/10.1117/12.2553319

KEYWORDS: Stochastic processes, Photomasks, Data modeling, Nanoimprint lithography, Line width roughness, Calibration, Extreme ultraviolet, Photons, Scanning electron microscopy, Line edge roughness

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Proceedings Article | 23 March 2020 Presentation + Paper

Presentation + Paper

Prediction of EUV stochastic microbridge probabilities by lithography simulations

Erik Verduijn, Ulrich Welling, Jiuzhou Tang, Hans-Jürgen Stock, Ulrich Klostermann, Wolfgang Demmerle, Peter De Bisschop

Proceedings Volume 11323, 113230K (2020) https://doi.org/10.1117/12.2552236

KEYWORDS: Data modeling, Lithography, Stochastic processes, Calibration, Extreme ultraviolet lithography, Extreme ultraviolet, 3D modeling, Scanning electron microscopy, Photomasks, Nanoimprint lithography

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Proceedings Article | 4 April 2019 Paper

Paper

EUV computational lithography using accelerated topographic mask simulation

Vitaly Domnenko, Bernd Küchler, Wolfgang Hoppe, Jürgen Preuninger, Ulrich Klostermann, Wolfgang Demmerle, Martin Bohn, Dietmar Krüger, Ryoung Ryoung Han Kim, Ling Ee Tan

Proceedings Volume 10962, 109620O (2019) https://doi.org/10.1117/12.2515668

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Computational lithography, 3D modeling, Computer simulations, Optical proximity correction, Performance modeling, Photoresist processing, Resolution enhancement technologies

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Proceedings Article | 16 October 2017 Paper

Paper

Rigorous simulation of EUV mask pellicle

Yulu Chen, Xiangyu Zhou, Ulrich Klostermann, Lei Sun, Obert Wood, Mariya Braylovska, Sajan Marokkey, Francis Goodwin

Proceedings Volume 10451, 104510S (2017) https://doi.org/10.1117/12.2280339

KEYWORDS: Pellicles, Photomasks, Extreme ultraviolet, Nanoimprint lithography, Extreme ultraviolet lithography, Transmittance, Temporal coherence, Particles, Nickel, High volume manufacturing

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Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

Modeling of NTD resist shrinkage

Thomas Mülders, Hans-Jürgen Stock, Bernd Küchler, Ulrich Klostermann, Weimin Gao, Wolfgang Demmerle

Proceedings Volume 10146, 101460M (2017) https://doi.org/10.1117/12.2257909

KEYWORDS: Chemically amplified resists, Photoresist processing, Lithography, Process modeling, Polymers, 3D modeling, Data modeling, Particles, Diffusion

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Experimental characterization of NTD resist shrinkage

Bernd Küchler, Thomas Mülders, Hironobu Taoka, Weimin Gao, Ulrich Klostermann, Sou Kamimura, Grozdan Grozev, Masahiro Yoshidome, Michihiro Shirakawa, Waikin Li

Proceedings Volume 10147, 101470F (2017) https://doi.org/10.1117/12.2256568

KEYWORDS: Semiconducting wafers, Photoresist processing, Thin films, Computational lithography, Lithography, 3D modeling, Data modeling, Calibration, Polymers, Image processing

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Proceedings Article | 15 March 2016 Paper

Paper

SEM signal emulation for 2D patterns

Evgenii Sukhov, Thomas Muelders, Ulrich Klostermann, Weimin Gao, Mariya Braylovska

Proceedings Volume 9780, 97801O (2016) https://doi.org/10.1117/12.2223033

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Calibration, Metrology, Lithography, Electron beams, 3D modeling, Cadmium, Image acquisition, Computer simulations

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Proceedings Article | 26 March 2015 Paper

Paper

Rigorous wafer topography simulation for investigating wafer alignment quality and robustness

Nicoló Morgana, Dmitrii Gavrilin, Andreas Greiner, Detlef Hofmann, Itaru Kamohara, Ulrich Klostermann, Holger Moeller, Juergen Preuninger

Proceedings Volume 9426, 94260S (2015) https://doi.org/10.1117/12.2086075

KEYWORDS: Optical alignment, Semiconducting wafers, Signal processing, Silicon, Oxides, Computer simulations, Manufacturing, Visualization, Metals, Etching

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Proceedings Article | 19 March 2015 Paper

Paper

Experimental validation of stochastic modeling for negative-tone develop EUV resists

Itaru Kamohara, Weimin Gao, Ulrich Klostermann, Thomas Schmöller, Wolfgang Demmerle, Kevin Lucas, Danilo De Simone, Eric Hendrickx, Geert Vandenberghe

Proceedings Volume 9422, 942223 (2015) https://doi.org/10.1117/12.2085506

KEYWORDS: Line width roughness, Stochastic processes, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Data modeling, Scanning electron microscopy, Photoresist processing, Photomasks

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Proceedings Article | 31 March 2014 Paper

Paper

Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Weimin Gao, Ulrich Klostermann, Itaru Kamohara, Thomas Schmoeller, Kevin Lucas, Wolfgang Demmerle, Peter De Bisschop, Julien Mailfert

Proceedings Volume 9052, 90520C (2014) https://doi.org/10.1117/12.2046522

KEYWORDS: 3D modeling, Etching, Atrial fibrillation, Scanning electron microscopy, Semiconducting wafers, Photoresist processing, Data modeling, Calibration, Optical proximity correction, Optical lithography

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Proceedings Article | 28 March 2014 Paper

Paper

Layout optimization of DRAM cells using rigorous simulation model for NTD

Jinhyuck Jeon, Shinyoung Kim, Chanha Park, Hyunjo Yang, Donggyu Yim, Bernd Kuechler, Rainer Zimmermann, Thomas Muelders, Ulrich Klostermann, Thomas Schmoeller, Mun-hoe Do, Jung-Hoe Choi

Proceedings Volume 9053, 90530J (2014) https://doi.org/10.1117/12.2046541

KEYWORDS: Photomasks, Optical proximity correction, SRAF, Printing, Semiconducting wafers, 3D modeling, Calibration, Optimization (mathematics), Source mask optimization, Manufacturing

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DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a ”super stable” core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by scanning electron microscope (SEM) measurements. High resist impact and difficult model data acquisition demand for a simulation model that hat is capable of extrapolating reliably beyond its calibration dataset. We use rigorous simulation models to provide that predictive performance. We have discussed the need of a rigorous mask optimization process for DRAM contact cell layout yielding mask layouts that are optimal in process performance, mask manufacturability and accuracy. In this paper, we have shown the step by step process from analytical illumination source derivation, a NTD and application tailored model calibration to layout optimization such as OPC and SRAF placement. Finally the work has been verified with simulation and experimental results on wafer.

Proceedings Article | 12 April 2013 Paper

Paper

Role of 3D photo-resist simulation for advanced technology nodes

Aravind Narayana Samy, Rolf Seltmann, Frank Kahlenberg, Jessy Schramm, Bernd Küchler, Ulrich Klostermann

Proceedings Volume 8683, 86831E (2013) https://doi.org/10.1117/12.2011427

KEYWORDS: 3D modeling, Calibration, Photoresist processing, Data modeling, Scanning electron microscopy, 3D metrology, Etching, Process modeling, Atomic force microscopy, Lithography

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3D Resist Models are gaining significant interest for advanced technology node development. Correct prediction of resist profiles, resist top-loss and top-rounding are acquiring higher importance in ORC hotspot verification due to impact on etch resistance and post etch results. We would like to highlight the specific calibration procedure to calibrate a rigorous 3D model. Special focus is on the importance of high quality metrology data for both a successful calibration and for allowing a reduction of the number of data points used for calibration [1]. In a productive application the calibration could be performed using a subset of 20 features measured through dose and focus and model validation was done with 500 features through dose and focus. This data reduction minimized the actual calibration effort of the 3D resist model and enabled calibration run times of less than one hour. The successful validation with the complete data set showed that the data reduction did not cause over- fitting of the model. The model is applied and verified at hotspots showing defects such as bottom bridging or top loss that would not be visible in a 2D resist model. The model performance is also evaluated with a conventional CD error metric where CD at Bottom of simulation and measurement are compared. We could achieve excellent results for both metrics using SEM CD, SEM images, AFM measurements and wafer cross sections. Additional modeling criterion is resist model portability. A prerequisite is the separability of resist model and optical model, i.e. the resist model shall characterize the resist only and should not lump characteristics from the optical model. This is a requirement to port the resist model to different optical setups such as another illumination source without the need of re-calibration. Resist model portability is shown by validation and application of the model to a second process with significantly different optical settings. The resist model can predict hot spots and CDs for the second litho process with the same quality as for the process it was calibrated to.

Proceedings Article | 1 April 2013 Paper

Paper

7nm node EUV predictive study of mask LER transference to wafer

D. Civay, E. Nash, U. Klostermann, T. Wallow, P. Mangat, H. Koh, P. Brooker, J. Siebert, H. Levinson

Proceedings Volume 8679, 86792Q (2013) https://doi.org/10.1117/12.2011197

KEYWORDS: Line edge roughness, Photomasks, Stochastic processes, Semiconducting wafers, Critical dimension metrology, Calibration, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography

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Proceedings Article | 23 March 2012 Paper

Paper

Calibration and verification of a stochastic model for EUV resist

Weimin Gao, Alexander Philippou, Ulrich Klostermann, Joachim Siebert, Vicky Philipsen, Eric Hendrickx, Tom Vandeweyer, Gian Lorusso

Proceedings Volume 8322, 83221D (2012) https://doi.org/10.1117/12.917804

KEYWORDS: Line width roughness, Calibration, Data modeling, Stochastic processes, Extreme ultraviolet, Semiconducting wafers, Photomasks, Cadmium, Scanning electron microscopy, Photons

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Proceedings Article | 13 March 2012 Paper

Paper

Computational process optimization of array edges

Bernd Küchler, Artem Shamsuarov, Thomas Mülders, Ulrich Klostermann, Seung-Hune Yang, Seongho Moon, Vitaliy Domnenko, Sung-Woon Park

Proceedings Volume 8326, 83260H (2012) https://doi.org/10.1117/12.916528

KEYWORDS: SRAF, Source mask optimization, Tolerancing, Array processing, Photomasks, Printing, Optimization (mathematics), Manufacturing, Lithography, Optical proximity correction

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Proceedings Article | 13 March 2012 Paper

Paper

Source-mask optimization incorporating a physical resist model and manufacturability constraints

Thomas Mülders, Vitaliy Domnenko, Bernd Küchler, Hans-Jürgen Stock, Ulrich Klostermann, Peter De Bisschop

Proceedings Volume 8326, 83260G (2012) https://doi.org/10.1117/12.914047

KEYWORDS: Source mask optimization, Photomasks, Optimization (mathematics), SRAF, Manufacturing, Photoresist processing, Printing, Calibration, Lithography, Semiconducting wafers

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Proceedings Article | 5 April 2011 Paper

Paper

Physical simulation for verification and OPC on full chip level

Seongbo Shim, Seongho Moon, Youngchang Kim, Seongwoon Choi, Younghee Kim, Bernd Küchler, Ulrich Klostermann, Munhoe Do, Sooryoung Lee

Proceedings Volume 7973, 79732I (2011) https://doi.org/10.1117/12.879577

KEYWORDS: Optical proximity correction, Lithography, Signal processing, Image quality, Nanoimprint lithography, Photomasks, Calibration, System on a chip, Data modeling, Computer simulations

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Proceedings Article | 23 March 2011 Paper

Paper

Application of an inverse Mack model for negative tone development simulation

Weimin Gao, Ulrich Klostermann, Thomas Mülders, Thomas Schmoeller, Wolfgang Demmerle, Peter De Bisschop, Joost Bekaert

Proceedings Volume 7973, 79732W (2011) https://doi.org/10.1117/12.880949

KEYWORDS: Calibration, Photomasks, Double patterning technology, Lithography, Photoresist processing, Image processing, Source mask optimization, Scanning electron microscopy, Standards development, Metals

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Proceedings Article | 23 March 2011 Paper

Paper

Fine calibration of physical resist models: the importance of Jones pupil, laser bandwidth, mask error and CD metrology for accurate modeling at advanced lithographic nodes

Seongho Moon, Seunghune Yang, Artem Shamsuarov, Eunju Kim, Junghoon Ser, Youngchang Kim, Seongwoon Choi, Changjin Kang, Ulrich Klostermann, Bernd Küchler, John Lewellen, Thomas Schmöller, Sooryong Lee

Proceedings Volume 7973, 79730X (2011) https://doi.org/10.1117/12.879592

KEYWORDS: Calibration, Photomasks, Scanning electron microscopy, Cadmium, Metrology, Data modeling, Critical dimension metrology, 3D modeling, Optical proximity correction, Laser metrology

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Proceedings Article | 23 March 2011 Paper

Paper

Source and mask optimization applications in manufacturing

ChinTeong Lim, Vlad Temchenko, Ulrich Klostermann, Vitaliy Domnenko, Jens Schneider, Daniel Sarlette, Ingo Meusel, Dieter Kaiser, Ralf Ploss

Proceedings Volume 7973, 797322 (2011) https://doi.org/10.1117/12.879203

KEYWORDS: Optical proximity correction, Source mask optimization, Scanners, Lithography, Photomasks, Manufacturing, Photovoltaics, Fiber optic illuminators, Reticles, Resolution enhancement technologies

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SPIE Journal Paper | 1 January 2011

Calibration of physical resist models for simulation of extreme ultraviolet lithography

Ulrich Klostermann, Thomas Muelders, Thomas Schmöller, Gian Lorusso, Eric Hendrickx

JM3, Vol. 10, Issue 1, 013007, (January 2011) https://doi.org/10.1117/12.10.1117/1.3533324

KEYWORDS: Calibration, Photomasks, Data modeling, Critical dimension metrology, Extreme ultraviolet lithography, Extreme ultraviolet, 3D modeling, Scanning electron microscopy, Semiconducting wafers, Metrology

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Proceedings Article | 27 May 2010 Paper

Paper

Practical resist model calibration for e-beam direct write processes

Martin Schulz, Hans-Jürgen Stock, Ulrich Klostermann, Wolfgang Hoppe, Lars Bomholt, Philipp Jaschinsky, Kang-Hoon Choi, Manuela Gutsch, Holger Sailer, Stephan Martens

Proceedings Volume 7748, 774818 (2010) https://doi.org/10.1117/12.866695

KEYWORDS: Calibration, Monte Carlo methods, Photoresist processing, Electron beam lithography, Data modeling, Process modeling, Scanning electron microscopy, Computer simulations, Scattering, Chemically amplified resists

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Proceedings Article | 20 March 2010 Paper

Paper

Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

U. Klostermann, T. Mülders, T. Schmöller, G. Lorusso, E. Hendrickx

Proceedings Volume 7636, 763619 (2010) https://doi.org/10.1117/12.846549

KEYWORDS: Calibration, Data modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Critical dimension metrology, 3D modeling, Metrology, Semiconducting wafers

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SPIE Journal Paper | 1 July 2009 Open Access

Open Access

Impact of mask three-dimensional effects on resist-model calibration

Peter De Bisschop, Thomas Muelders, Ulrich Klostermann, Thomas Schmoeller, John Biafore, Stewart Robertson, Mark Smith

JM3, Vol. 8, Issue 03, 030501, (July 2009) https://doi.org/10.1117/12.10.1117/1.3158356

KEYWORDS: 3D modeling, Critical dimension metrology, Data modeling, Photomasks, Calibration, Cadmium, Optical proximity correction, Lithography, 3D acquisition, SRAF

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SPIE Journal Paper | 1 July 2009

Calibration of physical resist models: methods, usability, and predictive power

Ulrich Klostermann, Thomas Mülders, Denis Ponomarenco, Thomas Schmoeller, Jeroen Van de Kerkhove, Peter De Bisschop

JM3, Vol. 8, Issue 03, 033005, (July 2009) https://doi.org/10.1117/12.10.1117/1.3224949

KEYWORDS: Calibration, 3D modeling, Data modeling, SRAF, Photomasks, Printing, Cadmium sulfide, Lithography, Optical proximity correction, Scanning electron microscopy

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Proceedings Article | 1 April 2009 Paper

Paper

Calibration of physical resist models: methods, usability, and predictive power

Ulrich Klostermann, Thomas Mülders, Denis Ponomarenco, Thomas Schmöller, Jeroen Van de Kerkhove, Peter De Bisschop

Proceedings Volume 7273, 727342 (2009) https://doi.org/10.1117/12.814216

KEYWORDS: Calibration, Data modeling, 3D modeling, SRAF, Printing, Cadmium, Lithography, Photomasks, Optical proximity correction, Finite element methods

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Showing 5 of 33 publications

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