Dr. Umberto Iessi Profile

Dr. Umberto Iessi

Lithography Scanner group mgr at Micron Agrate

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Publications (10)

Proceedings Article | 20 March 2020 Paper

Photosensitive organic insulator photo-cell monitoring through advanced macro inspection

A. Corno, A. Bordogna, M. Braga, A. Pescalli, F. Ferrario, U. Iessi, P. Canestrari, P. Sharma, M. Salamone, P. Parisi, T. Groos

Proceedings Volume 11325, 113252K (2020) https://doi.org/10.1117/12.2551884

KEYWORDS: Inspection, Manufacturing, Optical lithography, Process control

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Proceedings Article | 19 September 2018 Paper

CK-MASK semi-manual tool for mask inspection and blowing

Andrea Leserri, Francesco Ferrario, Umberto Iessi, Andrea Gusmini

Proceedings Volume 10775, 107750E (2018) https://doi.org/10.1117/12.2326607

KEYWORDS: Photomasks, Inspection, Particles, Pellicles, Contamination, Optical inspection, Lithography

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Proceedings Article | 4 March 2010 Paper

Laser bandwidth effect on overlay budget and imaging for the 45 nm and 32nm technology nodes with immersion lithography

Umberto Iessi, Michiel Kupers, Elio De Chiara, Pierluigi Rigolli, Ivan Lalovic, G. Capetti

Proceedings Volume 7640, 76402B (2010) https://doi.org/10.1117/12.846552

KEYWORDS: Laser stabilization, Optical simulations, Overlay metrology, Chromatic aberrations, Laser applications, Lithography, Metrology, Distortion, Immersion lithography, Critical dimension metrology

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Proceedings Article | 4 March 2010 Paper

CD-uniformity for 45nm NV memory on product-stack

Umberto Iessi, Brian Colombo, Johannes Plauth, Benedetta Triulzi, Elio De Chiara, Paolo Canestrari

Proceedings Volume 7640, 76403I (2010) https://doi.org/10.1117/12.846538

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanners, Thin films, Reticles, Statistical analysis, Thin film devices, Wafer-level optics, 193nm lithography, Lithography

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Proceedings Article | 16 March 2009 Paper

High-order distortion effects induced by extreme off-axis illuminations at hyper NA lithography

Pierluigi Rigolli, Gianfranco Capetti, Elio De Chiara, Leonardo Amato, Umberto Iessi, Paolo Canestrari, Christine Llorens, Sanne Smit, Lionel Brige, Johannes Plauth

Proceedings Volume 7274, 72742T (2009) https://doi.org/10.1117/12.814148

KEYWORDS: Overlay metrology, Lithographic illumination, Distortion, Lithography, Semiconducting wafers, Device simulation, Reticles, Yield improvement, Scanners, Wavefronts

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Proceedings Article | 25 March 2008 Paper

In-line focus-dose monitoring for hyper NA imaging

Sara Loi, Alejandro Fasciszewski Zeballos, Umberto Iessi, John Robinson, Pavel Izikson, Antonio Mani, Marco Polli

Proceedings Volume 6922, 69223H (2008) https://doi.org/10.1117/12.772904

KEYWORDS: Semiconducting wafers, Metrology, Data modeling, Neural networks, Scanners, Lithography, 3D modeling, Diffractive optical elements, Finite element methods, Photoresist processing

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Proceedings Article | 7 March 2008 Paper

Double patterning overlay and CD budget for 32 nm technology node

Umberto Iessi, Sara Loi, Antonio Salerno, Pierluigi Rigolli, Elio De Chiara, Catia Turco, Roberto Colombo, Marco Polli, Antonio Mani

Proceedings Volume 6924, 692428 (2008) https://doi.org/10.1117/12.772795

KEYWORDS: Photomasks, Overlay metrology, Semiconducting wafers, Double patterning technology, Etching, Scanners, Metrology, Optical alignment, Lithography, Optical lithography

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Proceedings Article | 24 March 2006 Paper

AIM technology for nonvolatile memories microelectronics devices

Pier Luigi Rigolli, Laura Rozzoni, Catia Turco, Umberto Iessi, Marco Polli, Elyakim Kassel, Pavel Izikson, Yosef Avrahamov

Proceedings Volume 6152, 61524C (2006) https://doi.org/10.1117/12.656485

KEYWORDS: Overlay metrology, Metrology, Image segmentation, Front end of line, Semiconducting wafers, Chemical mechanical planarization, Metals, Lithography, Scanning electron microscopy, Scanners

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Proceedings Article | 20 March 2006 Paper

Analysis of the combined impact of the laser spectrum, illuminator miscalibrations, and lens aberrations on the 90nm technology node imaging with off-axis illuminations

Sara Loi, Umberto Iessi, Robert Chung

Proceedings Volume 6154, 615434 (2006) https://doi.org/10.1117/12.655567

KEYWORDS: Fiber optic illuminators, Overlay metrology, Lithography, Lithographic illumination, Monochromatic aberrations, Critical dimension metrology, Metrology, Laser applications, Optical simulations, Photomasks

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Proceedings Article | 28 May 2004 Paper

Customized illumination schemes for critical layers of 90-nm node dense memory devices in ArF lithography: comparison between simulation and experimental results

Gianfranco Capetti, Maddalena Bollin, Annalisa Pepe, Gina Cotti, Sara Loi, Umberto Iessi

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533707

KEYWORDS: Diffraction, Binary data, Photomasks, Lithographic illumination, Lithography, Nanoimprint lithography, Scanners, Semiconducting wafers, Resolution enhancement technologies, Edge roughness

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Showing 5 of 10 publications

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