Mr. Umut Basaran Profile

Umut Basaran

at Univ Stuttgart

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 25 May 2004 Paper

MOSFET noise modeling and parameter extraction

Manfred Berroth, Umut Basaran

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546997

KEYWORDS: Transistors, Field effect transistors, Amplifiers, CMOS technology, Resistance, Microwave radiation, Molybdenum, Capacitance, Metals, Temperature metrology

Read Abstract +

With the recent advances in CMOS technologies, the MOSFETs offer competitive low noise performance at high frequencies comparable with their bipolar counterparts and become attractive candidates even for challenging high frequency applications with their low cost and high integration level. Therefore, the transistor model accuracy becomes a crucial factor for predicting the RF circuit performance accurately in a broad frequency range. An overview of a high frequency noise modeling approach based on a direct parameter extraction technique is presented in this paper. Moreover, the presented parameter extraction methods are evaluated by means of broadband noise parameter and S-parameter measurements. A temperature noise model predicts all four noise parameters at any frequency and can be used to determine the dominant noise source of the small-signal equivalent circuit. The model can be verified by comparing the measured noise parameters with the simulation results over a broad frequency range. Finally, a practical circuit example of an amplifier using a 0.12 μm CMOS technology at 24 GHz is given.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years