Dr. Muhammad Usman
Associate Professor at Ghulam Ishaq Khan Institute
SPIE Involvement:
Author | Student Chapter Advisor
Area of Expertise:
III-V , Light-emitting diodes , Laser Diodes , Li-Fi , Visible Light Communication , Energy Conservation
Profile Summary

Muhammad Usman does pioneering research in the area of III-V-based light-emitting diodes and laser diodes in Pakistan. He works on the energy economics of solid-state lighting in developing countries especially South Asia. His research interests include characterization and modeling of light-emitting diodes, laser diodes, and micro/nanostructured devices, energy conservation, solid-state lighting, electronic engineering, engineering physics, piezotronics and optical engineering.
Publications (6)

SPIE Journal Paper | 31 January 2023
Muhammad Usman, Tariq Jamil, Muhammad Aamir, Abdullrahman Abdullah Alyemeni
OE, Vol. 62, Issue 01, 017106, (January 2023) https://doi.org/10.1117/12.10.1117/1.OE.62.1.017106
KEYWORDS: Light emitting diodes, Electron beam lithography, Ultraviolet light emitting diodes, Aluminum gallium nitride, Doping, Gallium, Aluminum, Ultraviolet radiation, Transportation, Optical engineering

SPIE Journal Paper | 4 March 2021
OE, Vol. 60, Issue 03, 036101, (March 2021) https://doi.org/10.1117/12.10.1117/1.OE.60.3.036101
KEYWORDS: Electron beam lithography, Light emitting diodes, Quantum wells, Electron transport, Gallium nitride, Indium gallium nitride, Optical engineering, Interfaces, Polarization, Internal quantum efficiency

Proceedings Article | 27 August 2020 Paper
Proceedings Volume 11561, 1156102 (2020) https://doi.org/10.1117/12.2574352
KEYWORDS: Light emitting diodes, Quantum wells, Internal quantum efficiency, Indium gallium nitride

Proceedings Article | 20 August 2020 Presentation + Paper
Proceedings Volume 11498, 1149806 (2020) https://doi.org/10.1117/12.2568457
KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Internal quantum efficiency

SPIE Journal Paper | 16 June 2020
JPE, Vol. 10, Issue 02, 024505, (June 2020) https://doi.org/10.1117/12.10.1117/1.JPE.10.024505
KEYWORDS: Organic light emitting diodes, Electron beam lithography, Gallium, Light emitting diodes, Internal quantum efficiency, Quantum wells, Indium gallium nitride, Quantum efficiency, Gallium nitride, Indium

Showing 5 of 6 publications
Course Instructor
NON-SPIE: Solid State Electronics
NON-SPIE: Lasers Engineering and Applications
NON-SPIE: Optical Engineering
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Advertisement
Advertisement
Back to Top