Ms. Ute Buttgereit Profile

Ute Buttgereit

Senior Product Manger at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (49)

Proceedings Article | 23 March 2020 Presentation + Paper

Improving ORC methods and hotspot detection with the usage of aerial images metrology

Francois Weisbuch, Thomas Thaler, Ute Buttgereit, Christian Stötzel, Thomas Zeuner

Proceedings Volume 11327, 113270D (2020) https://doi.org/10.1117/12.2552048

KEYWORDS: Photomasks, Calibration, Etching, Scanners, Lithography, SRAF, Scanning electron microscopy, Semiconducting wafers, Metrology, Optical lithography

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Proceedings Article | 16 October 2017 Paper

Automated defect disposition with AIMS AutoAnalysis

Guy Russell, David Jenkins, Arosha Goonesekera, Kay Dornbusch, Vahagn Sargsyan, Hendrik Zachmann, Ute Buttgereit

Proceedings Volume 10451, 1045113 (2017) https://doi.org/10.1117/12.2281884

KEYWORDS: Defect detection, Defect inspection, Critical dimension metrology, Image analysis, Image processing, Statistical analysis, Tolerancing, Photomasks, Manufacturing, Reliability

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Proceedings Article | 28 September 2017 Paper

Aerial image metrology for OPC modeling and mask qualification

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter De Bisschop

Proceedings Volume 10446, 104460V (2017) https://doi.org/10.1117/12.2281886

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Proceedings Article | 24 March 2017 Presentation + Paper

Effective use of aerial image metrology for calibration of OPC models

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter DeBisschop

Proceedings Volume 10147, 101470Y (2017) https://doi.org/10.1117/12.2258632

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Metrology, 3D modeling, Semiconducting wafers, Photoresist materials, Calibration, Wafer-level optics, Image processing, Scanners

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Proceedings Article | 29 October 2014 Paper

Short feedback loop for OPC model based on wafer level CD

Guoxiang Ning, Thomas Thaler, Kristian Schulz, Peter Philipp, Ute Buttgereit, Paul Ackmann, Lloyd Litt, Chin Teong Lim

Proceedings Volume 9235, 92351U (2014) https://doi.org/10.1117/12.2066169

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Photomasks, Printing, Calibration, Feedback loops, Metrology, Scanning electron microscopy, Image processing

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Proceedings Article | 16 September 2014 Paper

Automated hotspot analysis with aerial image CD metrology for advanced logic devices

Ute Buttgereit, Thomas Trautzsch, Min-ho Kim, Jung-Uk Seo, Young-Keun Yoon, Hak-Seung Han, Dong Hoon Chung, Chan-Uk Jeon, Gary Meyers

Proceedings Volume 9235, 92350B (2014) https://doi.org/10.1117/12.2065937

KEYWORDS: Computed tomography, Image processing, Critical dimension metrology, Logic devices, Optical proximity correction, Image analysis, Photomasks, Metrology, Logic, Printing

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Proceedings Article | 9 September 2013 Paper

Improving wafer level CD uniformity for logic applications utilizing mask level metrology and process

Avi Cohen, Thomas Trautzsch, Ute Buttgereit, Erez Graitzer, Ori Hanuka

Proceedings Volume 8880, 888025 (2013) https://doi.org/10.1117/12.2027348

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Photomasks, Logic, Signal attenuation, Metrology, Neodymium, Polonium, Finite element methods, Control systems

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Proceedings Article | 30 June 2012 Paper

A study of hot spot measurement on WLCD

Hidemichi Imai, Shingo Yoshikawa, Hideyoshi Takamizawa, Ute Buttgereit, Thomas Thaler

Proceedings Volume 8441, 844107 (2012) https://doi.org/10.1117/12.978706

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, 193nm lithography, Process control, Current controlled current source, Optical lithography, Extreme ultraviolet lithography, Lithography

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Proceedings Article | 14 October 2011 Paper

A study of closed-loop application: WLCD-CDC for 32nm and beyond reticles

Arosha Goonesekera, Ute Buttgereit, Thomas Thaler, Erez Graitzer

Proceedings Volume 8166, 816619 (2011) https://doi.org/10.1117/12.898892

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Signal attenuation, Photomasks, Logic, Scanners, Reticles, 193nm lithography, Process control, Cadmium

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Optical lithography stays at 193nm with a numerical aperture of 1.35 for several more years before moving to EUV lithography. Utilization of 193nm lithography for 32nm and beyond forces the mask maker to produce complex mask designs and tighter lithography specifications which in turn make process control more important than ever. High yield with regards to chip production requires accurate process control. Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance and reliable functionality of any integrated circuit. There are different contributors which impact the total wafer CDU: mask CD uniformity, resist process, scanner and lens fingerprint, wafer topography, etc. In this study the newly developed wafer level CD metrology tool WLCD of Carl Zeiss SMS is utilized for CDU measurements in conjunction with the CDC tool from Carl Zeiss SMS which provides CD uniformity correction. The WLCD measures CD based on proven aerial imaging technology. The CDC utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. The objective of this study is to evaluate the usage of these two tools in a closed loop process to optimize CDU of the mask before leaving the mask shop and to ensure improved intra-field CDU at wafer level. Main focus of the study is to investigate the correlation of applied attenuation by CDC and the resulting CD change, the impact of CDC process on CD linearity behavior and the correlation of WLCD data and wafer data. Logic and SRAM cells with features having designed line CD's at wafer level, ranging from 27nm to 42nm have been used for the study. The investigation provides evidence that the applied attenuation by CDC shows a linear correlation to CD change at wafer level measured with WLCD. Additionally, WLCD data shows that the CDC application does not impact the CD linearity for the tested feature range. The WLCD measurement data in turn show an excellent correlation to wafer print CD data indicating cost effective use case of closed loop WLCD/CDC application.

Proceedings Article | 2 April 2011 Paper

Mask tuning for process window improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7985, 79850K (2011) https://doi.org/10.1117/12.896910

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Signal attenuation, Scanners, Process control, Reticles, Scatterometry, Calibration

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For the next years optical lithography stays at 193nm with a numerical aperture of 1.35. Mask design becomes more complex, mask and lithography specifications tighten. The k1 factor comes close to 0.25 which leads to a tremendously increased Mask Error Enhancement Factor (MEEF). This means that CD errors on mask are getting highly amplified on wafer. Process control becomes more important than ever. Accurate process control is a key factor to success to maintain a high yield in chip production. One key parameter to ensure a high and reliable functionality for any integrated circuit is the critical dimension uniformity (CDU). There are different contributors which impact the intra-field CD performance at wafer such as mask CD uniformity, scanner fingerprint, resist process etc. In the present work we focus on improvement of mask CD signature which is one of the main contributors to intra-field CD uniformity. The mask CD uniformity has been measured by WLCD32 which measures the CD based on proven aerial image technology. Based on this CD input the CD uniformity was corrected by CDC200^TM and afterwards verified by WLCD32 measurement. The CDC200^TM tool utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. Additionally, the impact of the improved CD uniformity on the lithography process window was investigated. Goal of the work is to establish a process flow for mask CD uniformity improvement based on mask CD metrology by WLCD32 and mask CD uniformity control by CDC200^TM and to verify its impact on the lithography process window. The proposed process flow will be validated by wafer prints. It was shown that the WLCD32 has an excellent correlation to wafer data and an outstanding CD repeatability. It provides a reliable input for CD uniformity correction and is the tool of choice to verify the CD uniformity improvement after CDC200^TM treatment.

Proceedings Article | 25 September 2010 Paper

Process window improvement on 45nm technology non volatile memory by CD uniformity improvement

Ute Buttgereit, Robert Birkner, Erez Graitzer, Avi Cohen, Benedetta Triulzi, Carmelo Romeo

Proceedings Volume 7823, 78230C (2010) https://doi.org/10.1117/12.865484

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Lithography, Scanners, Scatterometry, Process control, Signal attenuation, Calibration, 193nm lithography

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Proceedings Article | 16 April 2010 Paper

CD uniformity correction on 45-nm technology non-volatile memory

Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen, Hiroyuki Miyashita, Benedetta Triulzi, Alejandro Fasciszewski Zeballos, Carmelo Romeo

Proceedings Volume 7638, 76383K (2010) https://doi.org/10.1117/12.847028

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Calibration, Scanners, Signal attenuation, Airborne remote sensing, Reticles, Metrology, Process control

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Proceedings Article | 2 April 2010 Paper

Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements

Ute Buttgereit, Robert Birkner, Thomas Scheruebl, Sander de Putter, Bernardo Kastrup, Jo Finders

Proceedings Volume 7638, 76380D (2010) https://doi.org/10.1117/12.848053

KEYWORDS: Semiconducting wafers, Reticles, Critical dimension metrology, Metrology, Scanners, Scanning electron microscopy, Photomasks, Data corrections, Data acquisition, Image analysis

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Proceedings Article | 2 April 2010 Paper

Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

Bertrand Le Gratiet, Frank Sundermann, Jean Massin, Marianne Decaux, Nicolas Thivolle, Fabrice Baron, Alain Ostrovsky, Cedric Monget, Jean Damien Chapon, Yoann Blancquaert, Karen Dabertrand, Lionel Thevenon, Benedicte Bry, Nicolas Cluet, Bertrand Borot, Raphael Bingert, Thierry Devoivre, Pascal Gourard, Laurène Babaud, Ute Buttgereit, Robert Birkner, Mark Joyner, Erez Graitzer, Avi Cohen

Proceedings Volume 7638, 76380A (2010) https://doi.org/10.1117/12.845987

KEYWORDS: Photomasks, Critical dimension metrology, Metrology, Etching, Scanners, Semiconducting wafers, Airborne remote sensing, Logic, Optical lithography, Process control

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Proceedings Article | 11 December 2009 Paper

In-die actinic metrology on photomasks for low k1 lithography

Dirk Beyer, Ute Buttgereit, Thomas Scheruebl, Axel Zibold

Proceedings Volume 7520, 752016 (2009) https://doi.org/10.1117/12.839973

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Image registration, Scanners, Lithography, Phase measurement, Printing, Phase shifting

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Proceedings Article | 30 September 2009 Paper

In-die metrology on photomasks for low k1 lithography

Dirk Beyer, Ute Buttgereit, Thomas Scheruebl

Proceedings Volume 7488, 74881N (2009) https://doi.org/10.1117/12.834869

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Image registration, Phase measurement, Scanners, Lithography, Printing, Phase shifting

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Proceedings Article | 27 May 2009 Paper

MeRiT repair verification using in-die phase metrology Phame

Ute Buttgereit, Robert Birkner, Robert Stelzner

Proceedings Volume 7470, 747016 (2009) https://doi.org/10.1117/12.835205

KEYWORDS: Phase shifts, Photomasks, Absorption, Phase measurement, Phase shifting, Metrology, Lithography, Process control, Etching, 3D metrology

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With the transition of lithography into 45nm node and beyond the industry faces the challenge that mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. The use of Phase Shifting Masks (PSM), combined with off-axis illumination schemes, is essential to print feature sizes going beyond the lithographic wavelength. In conjunction with the shrinking feature size the tolerable defect size shrinks as well. This goes along with rising mask costs and therefore a high first pass yield becomes more important than ever. Repair strategies are required which have the potential to support the trend of decreasing tolerable defect sizes for both clear and opaque defects. In case of PSM it is not only important to remove material, of special interest is the capability to repair phase defects. This requires material deposition and etching accounting for transmission and phase as well. The ebeam repair system MeRiT^(R) MG 45 is based on the GEMINI^(R) column and allows etching and deposition to repair both clear and opaque defects with high resolution and edge placement precision. In this paper we focus on repair of phase defects on 6% att. PSM. We concentrate on 45nm lines/spaces looking into different defect dimensions. At feature sizes of 45nm CD, corresponding to 180nm CD at mask, feature topography already impacts the phase shift. Therefore a base line investigation is performed evaluating the correlation between deposited PSM layer height and phase shift covering also the impact of 3D mask effects on phase shift. The deposited layer height is measured using AFM. For phase evaluation the newly developed phase metrology system Phame® was used. Phame^(R) enables optical phase shift measurement with high spatial resolution down to 120nm half pitch on mask. On-axis and off-axis illumination can be applied according to the required scanner settings during wafer printing. Phame^(R) captures imaging effects as well as 3D mask effects which are of special importance for further shrinking feature sizes.

Proceedings Article | 11 May 2009 Paper

Phase behavior through pitch and duty cycle and its impact on process window

Ute Buttgereit, Robert Birkner, Dirk Seidel, Sascha Perlitz, Vicky Philipsen, Peter De Bisschop

Proceedings Volume 7379, 737916 (2009) https://doi.org/10.1117/12.824283

KEYWORDS: Phase shifts, Photomasks, Phase measurement, Etching, Semiconducting wafers, Dry etching, Printing, Quartz, Polarization, 3D metrology

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Proceedings Article | 24 March 2009 Paper

WLCD: a new system for wafer level CD metrology on photomasks

Sven Martin, Holger Seitz, Wolfgang Degel, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 7272, 72722T (2009) https://doi.org/10.1117/12.814728

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanners, Lithography, Airborne remote sensing, Printing, 193nm lithography, Scanning electron microscopy, Optical proximity correction

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Proceedings Article | 23 March 2009 Paper

Investigation of phase distribution using Phame in-die phase measurements

Ute Buttgereit, Sascha Perlitz

Proceedings Volume 7272, 727217 (2009) https://doi.org/10.1117/12.814132

KEYWORDS: Photomasks, Phase measurement, Phase shifts, Etching, Metrology, Critical dimension metrology, Semiconducting wafers, Lithography, Printing, Dry etching

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As lithography mask processes move toward 45nm and 32nm node, mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. Driven by this fact the requirements for metrology tools increase as well. Efforts in metrology have been focused on accurately measuring CD linearity and uniformity across the mask, and accurately measuring phase variation on Alternating/Attenuated PSM and transmission for Attenuated PSM. CD control on photo masks is usually done through the following processes: exposure dose/focus change, resist develop and dry etch. The key requirement is to maintain correct CD linearity and uniformity across the mask. For PSM specifically, the effect of CD uniformity for both Alternating PSM and Attenuated PSM and etch depth for Alternating PSM becomes also important. So far phase measurement has been limited to either measuring large-feature phase using interferometer-based metrology tools or measuring etch depth using AFM and converting etch depth into phase under the assumption that trench profile and optical properties of the layers remain constant. However recent investigations show that the trench profile and optical property of layers impact the phase. This effect is getting larger for smaller CD's. The currently used phase measurement methods run into limitations because they are not able to capture 3D mask effects, diffraction limitations or polarization effects. The new phase metrology system - Phame(R) developed by Carl Zeiss SMS overcomes those limitations and enables laterally resolved phase measurement in any kind of production feature on the mask. The resolution of the system goes down to 120nm half pitch at mask level. We will report on tool performance data with respect to static and dynamic phase repeatability focusing on Alternating PSM. Furthermore the phase metrology system was used to investigate mask process signatures on Alternating PSM in order to further improve the overall PSM process performance. Especially global loading effects caused by the pattern density and micro loading effects caused by the feature size itself have been evaluated using the capability of measuring phase in the small production features. The results of this study will be reported in this paper.

Proceedings Article | 19 May 2008 Paper

Phame: phase measurements on 45nm node phase shift features

Ute Buttgereit, Robert Birkner, Dirk Seidel, Sascha Perlitz, Vicky Philipsen, Peter De Bisschop

Proceedings Volume 7028, 70282Z (2008) https://doi.org/10.1117/12.793105

KEYWORDS: Phase shifts, Photomasks, Semiconducting wafers, Phase measurement, Etching, Diffraction, Printing, 3D metrology, Metrology, Polarization

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Proceedings Article | 2 May 2008 Paper

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6792, 67920H (2008) https://doi.org/10.1117/12.798599

KEYWORDS: Photomasks, Phase shifts, Imaging systems, Electron beams, Opacity, Sensors, Bridges, Inspection, Visualization, Quartz

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Proceedings Article | 2 May 2008 Paper

Phame: high resolution off-axis phase shift measurements on 45nm node features

Ute Buttgereit, Sascha Perlitz, Dirk Seidel

Proceedings Volume 6792, 679217 (2008) https://doi.org/10.1117/12.798805

KEYWORDS: Phase shifts, Photomasks, Diffraction, Scanners, Phase measurement, Semiconducting wafers, Metrology, Image resolution, Printing, Optical lithography

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The extension of optical lithography to 45nm and beyond goes along with an increased mask complexity and tighter specifications. Both attenuated and alternating phase shift masks (PSMs) require precise control of the phase shift as a function of both pitch and target sizes. Simulations show that the phase shift in the image plane of a microlithography scanner is strongly impacted by numerical aperture (NA), mask pitch, 3D mask effects, and polarization, especially if the feature sizes come close to the imaging wavelength. Carl Zeiss SMS has developed a new phase metrology system that overcomes the limitations of currently existing tools. The new optical metrology tool - Phame^(R) - enables the industry to perform in-die phase measurements on alternating PSM (altPSM), attenuated PSM (attPSM), and CPL (chromeless phase lithography) masks down to 120nm half pitch at the mask. The optical beam path of the new metrology system allows actinic phase measurements of 193nm photomasks with a mask side NA up to 0.4, which is 1.6NA scanner equivalent at the wafer. This enables full compatibility to future 193nm immersion scanners down to the 32nm node. Off-axis phase measurement is realized by applying consecutive measurements of single source points according to the scanner relevant illumination settings. Phame^(R) measures the scanner equivalent phase and amplitude in the image plane for each coherent source point. For off-axis phase shift extraction Zeiss has developed a new concept called high resolution phase. This high resolution phase is sensitive to the diffraction spectrum and to mask phase errors. In this paper we will explain the off-axis high resolution concept in detail. First measurements have been performed on attPSM with 45nm node test features. The results show strong deviations of the high resolution phase shift depending on the pitch. Isolated features combined with dense features have been investigated. The measurement results will be presented in the paper.

Proceedings Article | 2 May 2008 Paper

High-resolution and high-precision pattern placement metrology for the 45 nm node and beyond

G. Klose, U. Buttgereit, M. Arnz, N. Rosenkranz

Proceedings Volume 6792, 67920M (2008) https://doi.org/10.1117/12.798779

KEYWORDS: Metrology, Photomasks, Image registration, Image analysis, Imaging systems, Atrial fibrillation, Double patterning technology, Cameras, Image resolution, Lithography

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Proceedings Article | 24 March 2008 Paper

Phase metrology on 45-nm node phase-shift mask structures

Kyung Lee, Malahat Tavassoli, Ute Buttgereit, Dirk Seidel, Robert Birkner, Sascha Perlitz

Proceedings Volume 6922, 69222A (2008) https://doi.org/10.1117/12.772106

KEYWORDS: Photomasks, Metrology, Phase measurement, Phase shifts, Semiconducting wafers, Scanners, Critical dimension metrology, Etching, Cadmium, Resolution enhancement technologies

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Proceedings Article | 31 October 2007 Paper

Laterally resolved off-axis phase measurements on 45-nm node production features using Phame

Ute Buttgereit, Sascha Perlitz, Dirk Seidel, Kyung Lee, Malahat Tavassoli

Proceedings Volume 6730, 67303E (2007) https://doi.org/10.1117/12.746676

KEYWORDS: Diffraction, Phase shifts, Photomasks, Scanners, Phase measurement, Image resolution, Metrology, Printing, Polarization, Semiconducting wafers

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As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. To ensure an accurate printing both attenuated and alternating PSMs (Phase Shift Masks) need precise control of phase as a function of both pitch and target sizes. However critical target CDs fall much below conventional phase metrology tools capabilities. Interferometer-based phase shift measurements are limited to large CD targets and require custom designed features in order to function properly, which limits phase measurement. AFM (Atomic Force Microscopy) methods are able to capture small feature sizes but do not consider any diffraction effects which are caused by the topography of the features itself when getting close to the used wavelength. Imaging simulations, both, in a rigorous and a Kirchhoff regime, show the dependency of the phase in the image plane of a microlithography exposure tool on numerical aperture and pitch due to the loss of phase information in the imaging pupil. Additionally, for small features the phase is strongly impacted by polarization and 3D mask effects. For these feature sizes, the image phase does not coincide with the etch depth equivalent phase calculated from the nominal depth and optical constants of the shifter material. Deviations up to 20° have been observed leading to strong variations in the imaging quality and process window variations during scanner printing. Considerations of CD variation between 0 and pi features by simulation show lowest 0/pi CD variation and therefore largest process window if the scanner relevant phase is at 180°. The simulation results illustrate the importance to measure the scanner relevant phase, effective in the image plane of the scanner. Consequently Zeiss, in collaboration with Intel, has developed a laterally resolving Phase Metrology Tool - Phame^® - for in-die phase measurements. The optical metrology tool is able to perform in-die phase measurement on alternating PSM, attenuated PSM and CPL masks down to 120nm half pitch at mask. On-axis measurement results have already been published. In this paper we elaborate on off-axis phase measurement theory and procedure. Furthermore we present first off-axis measurement results over varying features sizes using different illumination conditions.

Proceedings Article | 30 October 2007 Paper

Using the AIMS 45-193i for hyper-NA imaging applications

Peter De Bisschop, Vicky Philipsen, Robert Birkner, Ute Buttgereit, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301G (2007) https://doi.org/10.1117/12.746688

KEYWORDS: Scanners, Semiconducting wafers, Photomasks, Lithography, Inspection, Electroluminescence, Polarization, Binary data, Computer simulations, Reticles

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Proceedings Article | 30 October 2007 Paper

Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6730, 67301Z (2007) https://doi.org/10.1117/12.746666

KEYWORDS: Photomasks, Phase shifts, Electron beams, Imaging systems, Sensors, Phase measurement, Inspection, Opacity, Metrology

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Proceedings Article | 12 May 2007 Paper

Novel solution for in-die phase control under scanner equivalent optical settings for 45-nm node and below

Sascha Perlitz, Ute Buttgereit, Thomas Scherübl, Dirk Seidel, Kyung M. Lee, Malahat Tavassoli

Proceedings Volume 6607, 66070Z (2007) https://doi.org/10.1117/12.728948

KEYWORDS: Scanners, Photomasks, Phase measurement, Etching, Polarization, Diffraction, Phase shifts, Phase shifting, Metrology, Semiconducting wafers

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As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating Phase Shifting Masks (PSM) need precise control of phase as a function of both pitch and target sizes. However conventional interferometer-based phase shift measurements are limited to large CD targets and require custom designed patterns in order to function properly, which limits phase measurement Zeiss is currently developing an optical phase measurement tool (Phame^TM), providing the capability of extending process control from large CD test features to in-die phase shifting features with high spatial resolution. The necessity of designing this optical metrology tool according to the optical setup of a lithographic exposure tool (scanner) has been researched to be fundamental for the acquisition of phase information generated from features close to the size of the used wavelength. It was found by simulation that the image phase of a scanner depends on polarization and the angle of incidence of the illumination light due to rigorous effects. Additionally, for small features the phase value is strongly influenced by the imaging NA of the scanner due to the loss of phase information in the imaging pupil. Simulations show that the resulting scanner phase in the image plane only coincides with the etch-depth equivalent phase for large test features, exceeding the size of the in-die feature by an order of magnitude. In this paper we introduce the Phame^TM phase metrology tool, which enables the industry to perform in-die phase control for Alternating PSM, Attenuated PSM and CPL masks. The Phame^TM uses a 193nm light source with the optical capability of phase measurement at scanner NA up to the equivalent of a NA1.6 immersion scanner, under varying, scanner relevant angle of incidence for Attenuated PSMs and CPLs, and with the possibility of polarizing the illuminating light. New options for phase shifting mask process control on in-die features will be outlined with first phase measurement results for varying states of polarization.

Proceedings Article | 5 April 2007 Paper

Phame: a novel phase metrology tool of Carl Zeiss for in-die phase measurements under scanner relevant optical settings

Sascha Perlitz, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 6518, 65184R (2007) https://doi.org/10.1117/12.712813

KEYWORDS: Scanners, Photomasks, Phase measurement, Metrology, Etching, Semiconducting wafers, Phase shifting, Process control, Optics manufacturing, Lithography

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Proceedings Article | 5 April 2007 Paper

Study of rigorous effects and polarization on phase shifting masks through simulations and in-die phase measurements

Kyung Lee, Malahat Tavassoli, Max Lau, Kiho Baik, Barry Lieberman, Sascha Perlitz, Ute Buttgereit, Thomas Scherübl

Proceedings Volume 6518, 65181Y (2007) https://doi.org/10.1117/12.712908

KEYWORDS: Photomasks, Phase measurement, Scanners, Etching, Semiconducting wafers, Polarization, Phase shifts, Metrology, Near field, Imaging systems

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Proceedings Article | 20 October 2006 Paper

Process window enhancement for 45-nm node using alterable transmission phase-shifting materials

Hans Becker, Markus Renno, Guenter Hess, Ute Buttgereit, Corinna Koepernik, Lorenz Nedelmann, Mathias Irmscher, Robert Birkner, Axel Zibold, Thomas Scheruebl

Proceedings Volume 6349, 63490J (2006) https://doi.org/10.1117/12.686022

KEYWORDS: Photomasks, Phase shifts, Etching, Silica, Tantalum, Lithography, Optical lithography, Semiconducting wafers, Scanners, Phase shifting

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Proceedings Article | 19 May 2006 Paper

Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography

Masaki Yoshizawa, Vicky Philipsen, Leonardus H. A. Leunissen, Eric Hendrickx, Rik Jonckheere, Geert Vandenberghe, Ute Buttgereit, Hans Becker, Corinna Koepernik, Mathias Irmscher

Proceedings Volume 6283, 62831G (2006) https://doi.org/10.1117/12.681883

KEYWORDS: Tantalum, Phase shifts, Photomasks, Lithography, Line width roughness, Polarizers, Scanners, Lithographic illumination, Polarization, Manufacturing

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Most IC manufacturers are considering MoSi to be the material of conventional 6% attenuating phase-shifting masks (attPSM) in hyper-NA lithography (50 nm half pitch node and smaller). However, simulation results show that Cr-based binary-intensity mask (BIM) outperforms the attPSM at dense lines and spaces (LS) patterns in hyper-NA lithography. A reason lies in the transmitted polarization state through the mask. The attPSM is found to be a transverse-magnetic polarizer for hyper-NA imaging, while the BIM acts as a transverse-electric polarizer, which is beneficial for imaging. Using a metal-based absorber of the attPSM has potential for improving the degree of polarization of transmitted light. In our previous work absorber thickness of bi-layer attPSM, i.e. Ta/SiO₂, was optimized through three-dimensional electromagnetic field (3D-EMF) simulations for better imaging performance than the MoSi attPSM. In this study, the thickness-optimized Ta/SiO₂ attPSM was fabricated to compare the imaging performance with the standard Ta/SiO₂ and MoSi attPSMs with 6% transmission and 180^o phase shift. The thickness-optimized Ta/SiO₂ attPSM has 1% transmission due to 50% thicker Ta than the standard, while the 180^o phase shift is controlled by SiO₂ thickness. The exposure latitude of 45 nm LS delineated by using an NA1.20 full-field scanner with xy-polarized cquadrupole was 15.7%, 13.4%, and 10.1% with depth of focus of 200 nm for the optimized Ta/SiO₂, the standard Ta/SiO₂, and MoSi, respectively. Line width roughness of the Ta/SiO₂ attPSMs was approximately 5.5 nm for the 45 nm LS, which was comparable to MoSi. Mask-error-enhancement factor (MEEF) of the 45 nm LS was 4.4, 4.9, and 3.8 for the optimized Ta/SiO₂, the standard Ta/SiO₂, and MoSi, though the simulation expected MEEF values of 4.1, 5.5, and 6.3, respectively. Because the transmission and the phase shift measured by normal incidence are not linked directly with the imaging performance in the hyper-NA lithography with off-axis illumination, the mask materials and structures need to be optimized by using 3D-EMF simulators for the better imaging quality.

Proceedings Article | 19 May 2006 Paper

Extended process window using variable transmission PSM materials for 65 nm and 45 nm node

Corinna Koepernik, Hans Becker, Robert Birkner, Ute Buttgereit, Mathias Irmscher, Lorenz Nedelmann, Axel Zibold

Proceedings Volume 6283, 62831D (2006) https://doi.org/10.1117/12.681877

KEYWORDS: Photomasks, Etching, Nanoimprint lithography, Phase shifts, Tantalum, Semiconducting wafers, Tolerancing, Optical lithography, Lithography, Transmittance

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Proceedings Article | 8 November 2005 Paper

Determination of mask layer stress by placement metrology

Jörg Butschke, Ute Buttgereit, Eric Cotte, Günter Hess, Mathias Irmscher, Holger Seitz

Proceedings Volume 5992, 59923U (2005) https://doi.org/10.1117/12.631526

KEYWORDS: Photomasks, Tantalum, Metrology, Optical lithography, Chromium, Interferometers, Image registration, Quartz, Finite element methods, Lithography

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Proceedings Article | 4 November 2005 Paper

Antireflection solutions for next generation 193-nm binary and phase-shifting masks

Hans Becker, Markus Renno, Ulrich Hermanns, Holger Seitz, Ute Buttgereit, Konrad Knapp, Günter Hess

Proceedings Volume 5992, 59920I (2005) https://doi.org/10.1117/12.632113

KEYWORDS: Reflection, Antireflective coatings, Photomasks, Binary data, Inspection, Phase shifts, Interfaces, Etching, Lithography, Opacity

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Proceedings Article | 5 October 2005 Paper

Performance data of a variable transmission phase shifting mask blank for 193nm lithography enhanced by inspection contrast tuning

Hans Becker, Markus Renno, Ulrich Hermanns, Holger Seitz, Ute Buttgereit, Konrad Knapp, Günter Hess

Proceedings Volume 5963, 59630J (2005) https://doi.org/10.1117/12.625210

KEYWORDS: Inspection, Etching, Phase shifts, Photomasks, Tantalum, Dry etching, Lithography, Phase shifting, Reflection, Oxides

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Proceedings Article | 28 June 2005 Paper

Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology

Corinna Koepernik, H. Becker, J. Butschke, U. Buttgereit, M. Irmscher, L. Nedelmann, F. Schmidt, S. Teuber

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617110

KEYWORDS: Etching, Tantalum, Chromium, Reactive ion etching, Optical lithography, Phase shifts, Dry etching, Diffractive optical elements, Oxygen, Photomasks

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Proceedings Article | 16 June 2005 Paper

Production challenges of making EUV mask blanks

Holger Seitz, Frank Sobel, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Thorsten Reichardt, Ronny Walter, Hans Becker, Ute Buttgereit, Gunter Hess, Konrad Knapp, Christian Wies, Rainer Lebert

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637335

KEYWORDS: Extreme ultraviolet, Photomasks, Multilayers, Extreme ultraviolet lithography, Metrology, Reflectivity, Dry etching, Inspection, Etching, Process control

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Proceedings Article | 12 May 2005 Paper

Investigation of polarization effects on new mask materials

Karsten Bubke, Silvio Teuber, Ingo Hoellein, Hans Becker, Holger Seitz, Ute Buttgereit

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599688

KEYWORDS: Photomasks, Polarization, Diffraction, Phase shifts, Tantalum, Binary data, Etching, Lithography, Reticles, Absorbance

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Proceedings Article | 6 May 2005 Paper

Recent results on EUV mask blank multilayers and absorbers

Holger Seitz, Frank Sobel, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Thorsten Reichardt, Ronny Walter, Hans Becker, Ute Buttgereit, Guenter Hess, Konrad Knapp, Christian Wies, Rainer Lebert

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600538

KEYWORDS: Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Multilayers, Reflectivity, Etching, Dry etching, Metrology, CCD cameras, Inspection

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Proceedings Article | 6 December 2004 Paper

Absorber stack optimization toward EUV lithography mask blank pilot production

Frank Sobel, Lutz Aschke, Markus Renno, Holger Seitz, Hans Becker, Nathalie Olschewski, Torsten Reichardt, Guenter Hess, Ute Buttgereit, Konrad Knapp, Florian Letzkus, Joerg Butschke, Corinna Koepernik

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568787

KEYWORDS: Coating, Reflectivity, Etching, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Dry etching, Inspection, Manufacturing, Multilayers

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Proceedings Article | 6 December 2004 Paper

New solutions for inspection contrast tuning, enhanced chemical durability, and a new ultrahigh-transmission PSM

Hans Becker, Pascal Schley, Frank Schmidt, Frank Sobel, Markus Renno, Nathalie Olschewski, Holger Seitz, Ute Buttgereit, Konrad Knapp, Guenter Hess

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570217

KEYWORDS: Inspection, Etching, Tantalum, Phase shifts, Dry etching, Lithography, Oxides, Silica, Reflection, Mask cleaning

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Proceedings Article | 20 August 2004 Paper

Performance data on new tunable attenuating PSM for 193-nm and 157-nm lithography

Hans Becker, Frank Schmidt, Frank Sobel, Markus Renno, Ute Buttgereit, Jay Chey, Marie Angelopoulos, Konrad Knapp, Gunter Hess

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557798

KEYWORDS: Particles, Phase shifts, Silica, Lithography, Etching, Photomasks, Tantalum, Surface roughness, Scanning electron microscopy, Deposition processes

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Proceedings Article | 17 December 2003 Paper

Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography

Hans Becker, Jay Chey, Frank Sobel, Frank Schmidt, Markus Renno, Ute Buttgereit, Marie Angelopoulos, Guenter Hess, Konrad Knapp

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518339

KEYWORDS: Phase shifts, Particles, Tantalum, Phase shifting, Lithography, Photomasks, Chemical lasers, Laser stabilization, Vacuum ultraviolet, Ion beams

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Proceedings Article | 17 December 2003 Paper

Update on the EUVL mask blank activity at Schott Lithotec

Frank Sobel, Lutz Aschke, Hans Becker, Markus Renno, Frauke Ruggeberg, Steffen Kirchner, Thomas Leutbecher, Nathalie Olschewski, Mario Schiffler, Kurt Walter, Guenter Hess, Ute Buttgereit, Konrad Knapp, Rainer Lebert, Larissa Juschkin, Christian Wies, Bernhard Jagle

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518061

KEYWORDS: Extreme ultraviolet, Photomasks, Multilayers, Extreme ultraviolet lithography, Coating, Reflectivity, Polishing, Reflectometry, Surface finishing, Metrology

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Proceedings Article | 27 December 2002 Paper

Back to square 9: a demonstration of 9-in. reticle capablilty

Kevin Cummings, Ludger Schneider-Stoermann, Ute Buttgereit, Mathias Irmscher, Dietmar Mueller, Peter Hudek, Dirk Beyer, Bernd Brendel, John Whittey, Benjamin Eynon, Jason Harsch, Chris Constantine, Kirk Miller

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467495

KEYWORDS: Reticles, Photomasks, Critical dimension metrology, Semiconducting wafers, Standards development, Scanning electron microscopy, Lithography, Metrology, Manufacturing, Chromium

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Proceedings Article | 27 December 2002 Paper

High-performance 6-in. EUV mask blanks produced under real production conditions by ion-beam sputter deposition

Hans Becker, Frank Sobel, Lutz Aschke, Markus Renno, Juergen Krieger, Ute Buttgereit, Guenter Hess, Frank Lenzen, Konrad Knapp, Sergey Yulin, Torsten Feigl, Thomas Kuhlmann, Norbert Kaiser

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467578

KEYWORDS: Reflectivity, Multilayers, Particles, Extreme ultraviolet, Ion beams, Transmission electron microscopy, Silicon, Sputter deposition, Interfaces, Reflectometry

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Proceedings Article | 9 April 2001 Paper

Improvement of temperature uniformity during prebake process in mask blank production

Bernd Beier, Fredi Schubert, Ute Buttgereit, Andreas Bensberg

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425078

KEYWORDS: Critical dimension metrology, Convection, Photomasks, Infrared cameras, Silicon, Semiconducting wafers, Optical lithography, Aluminum, Reflection, Cameras

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Showing 5 of 49 publications

Conference Committee Involvement (3)

Photomask Technology

19 September 2006 | Monterey, California, United States

Photomask Technology

3 October 2005 | Monterey, California, United States

Photomask Technology

14 September 2004 | Monterey, California, United States

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